Rev. A/AH
2007
-
12
-
22
MMBT3904
TAITRON COMPONEN
T
S INCORPORATED www.taitroncomponents.com
Page 1
of 3
Tel: (800)
-
TAITRON (800)
-
824
-
8766 (661)
-
257
-
6060
Fax: (800)-TAITFA (800)-824-8329 (661)-257-6415
SMD General Purpose
Transistor (NPN)
SMD General Purpose Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance
Mechanical Data
Case: SOT-23, Plastic Package
Terminals: Solderable per MIL-STD-202G, Method 208
Weight: 0.008 gram
Maximum Ratings (T
Ambient
=25ºC unless noted otherwise)
Symbol Description MMBT3904 Unit
Marking Code 1A
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6.0 V
IC Collector Current 200 mA
Ptot Power Dissipation above 25°C 250 mW
R θJA Thermal Resistance from Junction to Ambient 450 ° C /W
TJ Junction Temperature 150 ° C
TSTG Storage Temperature Range -55 to +150 ° C
SOT-23
Rev. A/AH
2007
-
12
-
22
MMBT3904
SMD General Purpose Transistor (NPN)
www.taitroncomponents.com Page 2
of 3
Electrical Characteristics (T
Ambient
=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
40 - VCE=1V, IC=0.1mA
70 - VCE=1V, IC=1mA
100 300 VCE=1V, IC=10mA
60 - VCE=1V, IC=50mA
hFE D.C. Current Gain
30 -
VCE=1V, IC=100mA
V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=10µA, IE=0
V(BR)CEO Collector-Emitter Breakdown Voltage 40 - V IC=1mA, IB=0
V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0
- 0.2 IC=10mA, IB=1mA
VCEsat Collector-Emitter Saturation Voltage - 0.3 V IC=50mA, IB=5mA
0.65 0.85 IC=10mA, IB=1mA
VBEsat Base-Emitter Saturation Voltage - 0.95 V IC=50mA, IB=5mA
ICEV Collector-Emitter Cut-off Current - 50 nA VEB=3V, VCE=30V
IEBV Emitter-Base Cut-off Current - 50 nA VEB=3V, VCE=30V
fT Current Gain-Bandwidth Product 300 - MHz VCE=20V, IC=10mA,
f=100MHz
CCBO Collector-Base Capacitance - 4.0 pF VCB=5V, f=1.0MHz,
IE=0
CEBO Emitter-Base Capacitance - 8.0 pF VEB=0.5V, f=1.0MHz,
IC=0
NF Noise Figure - 5.0 dB
VCE=5V, IC=100µA,
RS=1kΩ,
f=10Hz to 15.7KHz
td Delay Time - 35
tr Rise Time - 35
IB1=1mA
IC=10mA
ts Storage Time - 200
tf Fall Time - 50
ns
IB1= IB2=1mA
IC=10mA
Rev. A/AH
2007
-
12
-
22
MMBT3904
SMD General Purpose Transistor (NPN)
www.taitroncomponents.com Page 3
of 3
Dimensions in mm
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 247-2232 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
SOT-23
