SMD General Purpose Transistor (NPN) MMBT3904 SMD General Purpose Transistor (NPN) Features * NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications * RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25C unless noted otherwise) Symbol Description MMBT3904 Unit Marking Code 1A VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6.0 V Collector Current 200 mA Power Dissipation above 25C 250 mW Thermal Resistance from Junction to Ambient 450 C /W Junction Temperature 150 C -55 to +150 C IC Ptot R JA TJ TSTG Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2007-12-22 Page 1 of 3 SMD General Purpose Transistor (NPN) MMBT3904 Electrical Characteristics (T Ambient=25C unless noted otherwise) Symbol hFE Description D.C. Current Gain Min. Max. Unit Conditions 40 - VCE=1V, IC=0.1mA 70 - VCE=1V, IC=1mA 100 300 VCE=1V, IC=10mA 60 - VCE=1V, IC=50mA 30 - VCE=1V, IC=100mA V(BR)CBO Collector-Base Breakdown Voltage 60 - V IC=10A, IE=0 V(BR)CEO Collector-Emitter Breakdown Voltage 40 - V IC=1mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10A, IC=0 - 0.2 - 0.3 0.65 0.85 - 0.95 IC=10mA, IB=1mA VCEsat Collector-Emitter Saturation Voltage VBEsat Base-Emitter Saturation Voltage ICEV Collector-Emitter Cut-off Current - 50 nA VEB=3V, VCE=30V IEBV Emitter-Base Cut-off Current - 50 nA 300 - MHz VEB=3V, VCE=30V VCE=20V, IC=10mA, f=100MHz VCB=5V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 VCE=5V, IC=100A, RS=1k, f=10Hz to 15.7KHz fT Current Gain-Bandwidth Product V V CCBO Collector-Base Capacitance - 4.0 pF CEBO Emitter-Base Capacitance - 8.0 pF NF Noise Figure - 5.0 dB td Delay Time - 35 tr Rise Time - 35 ts Storage Time - 200 tf Fall Time - 50 IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IB1=1mA IC=10mA ns IB1= IB2=1mA IC=10mA Rev. A/AH 2007-12-22 www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT3904 Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 247-2232 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: taitron@taitroncomponents.com Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTACOES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAUDE - SAO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN' AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2007-12-22 www.taitroncomponents.com Page 3 of 3