MMBT3904
Taiwan Semiconductor
1 Version: E2001
300mW, NPN Small Signal Transistor
FEATURES
Low power loss, high efficiency
Ideal for automated placement
High surge current capability
Moisture sensitivity level: level 1, per J-STD-020
RoHS Compliant
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
Case: SOT-23
Molding compound meets UL 94 V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Weight: 8 mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VCBO 60 V
VCEO 40 V
VEBO 6 V
IC 200 mA
hFE 400
Package SOT-23
Configuration Single die
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
MMBT3904
UNIT
Marking code on the device 1AM
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 40 V
Emitter-base voltage VEBO 6 V
Collector current IC 200 mA
Power dissipation PD 300 mW
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C
MMBT3904
Taiwan Semiconductor
2 Version: E2001
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT
Collector-base breakdown
voltage IC = 10 μA, IE = 0 V(BR)CBO 60 - - V
Collector-emitter breakdown
voltage IC = 1 mA, IB = 0 V(BR)CEO 40 - - V
Emitter-base breakdown
voltage IE = 10 μA, IC = 0 V(BR)EBO 6 - - V
Collector cutoff current VCB = 60 V, IE = 0 ICBO - - 0.1 µA
Collector cutoff current VCE = 30 V, VBE(OFF) = 3 V ICEO - - 50 nA
Emitter cutoff current VEB = 5 V, IC = 0 IEBO - - 0.1 µA
DC current gain
VCE = 1 V, IC = 10 mA
hFE
100 - 400
VCE = 1 V, IC = 50 mA 60 - -
VCE = 1 V, IC = 100 mA 30 - -
Collector-emitter saturation
voltage IC = 50 mA, IB = 5 mA VCE(sat) - - 0.30 V
Base-emitter saturation
voltage IC = 50 mA, IB = 5 mA VBE(sat) - - 0.95 V
Transition frequency VCE = 20 V , IC = 10 mA,
f= 100MHz fT 250 - - MHz
Delay time VCC=3V,VBE=0.5V,
IC=10mA, IB1=1mA
td - - 35 ns
Rise time tr - - 35 ns
Storage time VCC=3V,IB1=IB2=1mA,
IC=10mA
ts - - 200 ns
Fall time tf - - 50 ns
ORDERING INFORMATION
ORDERING CODE PACKAGE PACKING
MMBT3904 RF SOT-23 3K / 7" Reel
MMBT3904 RFG SOT-23 3K / 7" Reel
MMBT3904 R5 SOT-23 10K / 13" Reel
MMBT3904 R5G SOT-23 10K / 13" Reel
MMBT3904-D0 RF SOT-23 3K / 7" Reel
MMBT3904-D0 RFG SOT-23 3K / 7" Reel
MMBT3904-D0 R5 SOT-23 10K / 13" Reel
MMBT3904-D0 R5G SOT-23 10K / 13" Reel
MMBT3904-B0 RF SOT-23 3K / 7" Reel
MMBT3904-B0 RFG SOT-23 3K / 7" Reel
MMBT3904-B0 R5 SOT-23 10K / 13" Reel
MMBT3904-B0 R5G SOT-23 10K / 13" Reel
MMBT3904
Taiwan Semiconductor
3 Version: E2001
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Typical Pulsed Current Gain
VS. Collector Current
Fig.2 Collector-Emitter Saturation Voltage
VS. Collector Current
Fig.3 Base-Emitter Saturation Voltage
VS. Collector Current
Fig.4 Base-Emitter On Voltage
VS. Collector Current
0
100
200
300
400
500
0.1 1.0 10.0 100.0
V
CE
= 5V
125 °C
25 °C
- 40 °C
0.00
0.05
0.10
0.15
0.20
0 1 10 100
β = 10
125 °C
25 °C
- 40 °C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0.1 1 10 100
β = 10
125 °C
25 °C
-40 °C
0.2
0.4
0.6
0.8
1
0.1 1 10 100
VCE= 5V
125 °C
25 °C
-40 °C
V CESAT- Collector-Emitter Voltage (V)
I
C
- Collector Current (mA)
VBESAT - Base-Emitter Voltage (V)
IC - Collector Current (mA)
V BE(ON) - Base-Emitter On Voltage (V)
IC, Collector Current (mA)
IC - Collector Current (mA)
hFE - Typical Pulsed Current Gain
MMBT3904
Taiwan Semiconductor
4 Version: E2001
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 5 Collector-Cutoff Current
VS. Ambient Temperature
Fig. 6 Capacitance VS. Reverse Bias Voltage
0.01
0.1
1
10
100
1000
25 50 75 100 125 150
VCB= 30V
1
10
0.1 1 10 100
f = 1.0 MHz
Cibo
Cobo
TA - Ambient Temperature (OC)
ICBO-Collector Current (nA)
Capacitance (pF)
Reverse Bias Voltage (V)
MMBT3904
Taiwan Semiconductor
5 Version: E2001
PACKAGE OUTLINE DIMENSION
SOT-23
SUGGESTED PAD LAYOUT
MMBT3904
Taiwan Semiconductor
6 Version: E2001
Notice
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