MMBT2222 / MMBT2222A
MMBT2222 / MMBT2222A
NPN Surface Mo unt Si-Ep i-Pla nar Swi tc hin g Transist or s
Si-Epi-Planar Schalt tra nsis t oren für die Obe r flä ch e nmontage NPN
Version 2006-05-15
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 250 mW
Plastic case
Kunststoffgehäuse
SOT-23
(TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
MMBT2222 MMBT2222A
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 30 V 40 V
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCBO 60 V 75 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 5 V 6 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) IC600 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
IC = 0.1 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
hFE
hFE
hFE
hFE
35
50
75
100
–
–
–
–
–
–
–
300
IC = 500 mA, VCE = 10 V 2) MMBT2222
MMBT2222A
hFE
hFE
30
40
–
–
–
–
h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA
Small signal current gain
Kleinsignal-Stromverstärkung
MMBT2222
MMBT2222A
hfe
hfe
50
75
–
–
300
375
Input impedance – Eingangs-Impedanz MMBT2222
MMBT2222A
hie
hie
2 kΩ
0.25 kΩ
–
–
8 kΩ
1.25 kΩ
Output admittance – Ausgangs-Leitwert MMBT2222
MMBT2222A
hoe
hoe
5 µS
25 µS
–
–
35 µS
200 µS
Charact eris tics (T j = 25°C) Kennwerte (Tj = 25°C)
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
2.5 max
1.3
±0.1
1.1
0.4
2.9
±0.1
12
3
Type
Code
1.9
MMBT2222 / MMBT2222A
Min. Typ. Max.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA MMBT2222
MMBT2222A
VCEsat
VCEsat
–
–
–
–
0.4 V
0.3 V
IC = 500 mA, IB = 50 mA MMBT2222
MMBT2222A
VCEsat
VCEsat
–
–
–
–
1.6 V
1.0 V
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 150 mA, IB = 15 mA MMBT2222
MMBT2222A
VBEsat
VBEsat
–
0.65 V
–
–
1.3 V
1.2 V
IC = 500 mA, IB = 50 mA MMBT2222
MMBT2222A
VBEsat
VBEsat
–
–
–
–
2.6 V
2.0 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 50 V, (E open)
VCB = 60 V, (E open)
MMBT2222
MMBT2222A
ICBO
ICBO
–
–
–
–
10 nA
10 nA
VCB = 50 V, Tj = 125°C, (E open)
VCB = 60 V, Tj = 125°C, (E open)
MMBT2222
MMBT2222A
ICBO
ICBO
–
–
–
–
10 µA
10 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 3 V, (C open) MMBT2222A IEB0 – –- 100 nA
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 20 mA, f = 100 MHz fT250 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCBO ––8 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEBO – – 25 pf
Noise figure – Rauschzahl
VCE = 10 V, IC = 100 µA, RG = 1 kΩ, f = 1 kHz MMBT2222A F – – 4 dB
Switching times – Schaltzeiten (between 10% and 90% levels)
delay time
rise time
VCC = 3 V, VBE = 0.5 V
IC = 150 mA, IB1 = 15mA
td– – 10 ns
tr– – 25 ns
storage time
fall time
VCC = 3 V, IC = 150 mA,
IB1 = IB2 = 15 mA
ts– – 225 ns
tf– – 60 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren MMBT2709 / MMBT2709A
Marking - Stempelung MMBT2222 = 1B
MMBT2222A = M1P
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG