MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren fur die Oberflachenmontage NPN NPN Version 2006-05-15 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 2 1.9 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Mae [mm] 1=B 2=E 3=C Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) MMBT2222 MMBT2222A Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 30 V 40 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 60 V 75 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 5V 6V Power dissipation - Verlustleistung Ptot 250 mW ) Collector current - Kollektorstrom (dc) IC 600 mA Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS -55...+150C -55...+150C 1 Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. hFE hFE hFE hFE 35 50 75 100 - - - - - - - 300 hFE hFE 30 40 - - - - DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 IC IC IC IC = = = = 0.1 mA, 1 mA, 10 mA, 150 mA, IC = 500 mA, VCE VCE VCE VCE = = = = 10 10 10 10 V V V V VCE = 10 V 2) MMBT2222 MMBT2222A h-Parameters at/bei VCE = 10 V, f = 1 kHz, IC = 1 mA / 10 mA Small signal current gain Kleinsignal-Stromverstarkung MMBT2222 MMBT2222A hfe hfe 50 75 - - 300 375 Input impedance - Eingangs-Impedanz MMBT2222 MMBT2222A hie hie 2 k 0.25 k - - 8 k 1.25 k Output admittance - Ausgangs-Leitwert MMBT2222 MMBT2222A hoe hoe 5 S 25 S - - 35 S 200 S Characteristics (Tj = 25C) 1 2 Kennwerte (Tj = 25C) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 MMBT2222 / MMBT2222A Min. Typ. Max. Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung ) 2 IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VCEsat VCEsat - - - - 0.4 V 0.3 V IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A VCEsat VCEsat - - - - 1.6 V 1.0 V Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) IC = 150 mA, IB = 15 mA MMBT2222 MMBT2222A VBEsat VBEsat - 0.65 V - - 1.3 V 1.2 V IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A VBEsat VBEsat - - - - 2.6 V 2.0 V Collector-Base cutoff current - Kollektor-Basis-Reststrom VCB = 50 V, (E open) VCB = 60 V, (E open) MMBT2222 MMBT2222A ICBO ICBO - - - - 10 nA 10 nA VCB = 50 V, Tj = 125C, (E open) VCB = 60 V, Tj = 125C, (E open) MMBT2222 MMBT2222A ICBO ICBO - - - - 10 A 10 A IEB0 - -- 100 nA fT 250 MHz - - CCBO - - 8 pF CEBO - - 25 pf F - - 4 dB VCC = 3 V, VBE = 0.5 V IC = 150 mA, IB1 = 15mA td - - 10 ns tr - - 25 ns VCC = 3 V, IC = 150 mA, IB1 = IB2 = 15 mA ts - - 225 ns tf - - 60 ns Emitter-Base cutoff current - Emitter-Basis-Reststrom VEB = 3 V, (C open) MMBT2222A Gain-Bandwidth Product - Transitfrequenz VCE = 20 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 10 V, IC = 100 A, RG = 1 k, f = 1 kHz MMBT2222A Switching times - Schaltzeiten (between 10% and 90% levels) delay time rise time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung 2 1 2 RthA < 420 K/W 1) MMBT2709 / MMBT2709A MMBT2222 = 1B MMBT2222A = M1P Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG