2SA1386/1386A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3519/A) Application : Audio and General Purpose 2SA1386 2SA1386A Unit -100max -100max A -160 -180 15.60.4 9.6 VCB= -180min -160min IC=-25mA IB -4 A hFE VCE=-4V, IC=-5A 50min PC 130(Tc=25C) W VCE(sat) IC=-5A, IB=-0.5A -2.0max V 150 C fT VCE=-12V, IE=2A 40typ MHz -55 to +150 C COB VCB=-10V, f=1MHz 500typ pF VCC (V) RL () IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (s) tstg (s) tf (s) -40 4 -10 -10 5 -1 1 0.3typ 0.7typ 0.2typ - 0 40 m A -3 00 m A -200mA -10 -150mA -100mA -5 -50mA I B =-20mA 0 0 -1 -2 -3 I C - V BE Temperature Characteristics (Typical) -3 -15 -2 -1 0 0 -0.2 -0.4 -0.6 -0.8 (V C E =-4V) -5 -10 -15 Transient Thermal Resistance DC Curr ent Gain h FE DC Curr ent Gain h FE -1 0 -1 125C 100 25C -30C 50 20 -0.02 -0.1 j-a - t Characteristics -0.5 -1 -5 -10 -15 3 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) f T - I E Characteristics (Typical) -2 Base-Emittor Voltage V B E (V) h FE - I C Temperature Characteristics (Typical) Typ -0.5 0 -1.0 200 -0.1 -5 Base Current I B (A) (V C E =-4V) 10 -0.02 -10 I C =-10A -4 h FE - I C Characteristics (Typical) 100 (V C E =-4V) -5A Collector-Emitter Voltage V C E (V) 300 1.4 E Weight : Approx 6.0g a. Type No. b. Lot No. C ( A C 125 Collector Current I C (A) -7 00 -5 m 00 5.450.1 B Collector Current I C (A) m A -15 5.450.1 0.65 +0.2 -0.1 V CE ( sa t ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C - V CE Characteristics (Typical) 1.05 +0.2 -0.1 hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) Typical Switching Characteristics (Common Emitter) 2 3 mp) Tstg o3.20.1 b j - a (C /W ) Tj a V e Te V(BR)CEO 2.00.1 (Cas A p) -15 mp) IC V A -100max VEB=-5V 4.80.2 -30C IEBO em V eT -5 e Te V VEBO Cas -180 ICBO 4.0 -160 V 19.90.3 VCEO -180 4.0max -160 20.0min VCBO 1.8 Conditions Symbol (Cas Unit 2.0 Symbol 2SA1386 2SA1386A External Dimensions MT-100(TO3P) (Ta=25C) 5.00.2 Absolute maximum ratings (Ta=25C) Electrical Characteristics 25C LAPT 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 130 -40 10 DC 0.1 1 Emitter Current I E (A) 18 10 -0.05 -3 -10 -50 -100 Collector-Emitter Voltage V C E (V) 2 -200 nk 1 0 0.02 si -0.1 at 1.2SA1386 2.2SA1386A he Without Heatsink Natural Cooling ite -1 -0.5 100 fin 20 -5 In Collecto r Cur ren t I C ( A) p ith Ty W Cut-o ff Fr eque ncy f T (MH Z ) -10 40 ms Ma xim um Powe r Dissipation P C ( W) 60 50 3.5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(C) 150