Advanced Power MOSFET IRF720A FEATURES -?--f-f Oo Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10uA (Max.) @ Vps = 400V Lower Rogon): 1-408Q (Typ.) Absolute Maximum Ratings % Rogion) = 1.80 lp = 3.3A TO-220 1.Gate 2. Drain 3. Source Symbol Characteristic Value Units Voss Drain-to-Source Voltage 400 Vv lo Continuous Drain Current (T.=25C) 3.3 A Continuous Drain Current (T.=100C) 2.1 lom Drain Current-Pulsed (1) 13 A Ves Gate-to-Source Voltage +30 Vv Eas Single Pulsed Avalanche Energy (2) 249 mJ lar Avalanche Current (1) 3.3 A Ear Repetitive Avalanche Energy (1) 4.9 mJ dv/dt Peak Diode Recovery dv/dt (3) 4.0 V/ns Total Power Dissipation (T.=25C) 49 W Po Linear Derating Factor 0.39 w/c Operating Junction and Ty , Tste - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering C TL Purposes, 1/8. from case for 5-seconds 300 Thermal Resistance Symbol Characteristic Typ. Max. Units Rosc Junction-to-Case -- 2.57 Recs Case-to-Sink 0.5 - C/W Roya Junction-to-Ambient -- 62.5 re Rev. B FAIRCHILD Ed SEMICONDUCTOR 1999 Fairchild Semiconductor CorporationIRF720A N-CHANNEL POWER MOSFET Electrical Characteristics (T,=25C unless otherwise specified) Symbol Characteristic Min. | Typ. | Max. Units Test Condition BVpss_| Drain-Source Breakdown Voltage | 400| -- -- Vs] Vesg=0V,Ip=250nA ABV/AT, | Breakdown Voltage Temp. Coeff. | -- |0.54] -- |V/C|lp=250uA See Fig 7 Vash) | Gate Threshold Voltage 2.0] - | 4.0] V_ | Vps=5V,lp=250nA Gate-Source Leakage , Forward - | -- | 100 nA Vgg=30V ass Gate-Source Leakage , Reverse -- -- |-100 Vag=-30V . -- -- 10 Vps=400V loss Drain-to-Source Leakage Current _ . | 400 pA Vps=320V,T .=125C Static Drain-Source R -- -- 1.8 Vv =10V,I =1.65A (4) Sen) | On-State Resistance o os Gis Forward Transconductance - 72.25] -- oO Vos=50V,Ip=1.65A (4) Ciss Input Capacitance -- | 385 | 500 + Vas=0V,Vps=25V, Ff =1 MHz Coss | Output Capacitance - | 60 | 70] pF : - See Fig 5 Cres Reverse Transfer Capacitance - | 27 | 33 tan) | Turn-On Delay Time - | 12 | 35 ; , Vpp=200V,Ip=3.3A, t Rise Time - | 17 | 45 , ns | Rg=18Q tary | Turn-Off Delay Time - | 51 | 110 ; " See Fig 13 (4) (5) t Fall Time -- | 18 | 45 Q, Total Gate Charge - | 19 | 26 Vps=320V,Vas=10V, Qgs Gate-Source Charge - | 2.7] - | nC | 15=3.3A Qga Gate-Drain (. Miller. ) Charge - Ftd] - See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. | Typ. | Max.| Units Test Condition Ig Continuous Source Current -- - | 3.3 A Integral reverse pn-diode lou Pulsed-Source Current (1) | -- - | 13 in the MOSFET Vep Diode Forward Voltage (4) | -- - [1.5 | V_ | T)=25C,15=3.3A,Ves=0V tre Reverse Recovery Time -- | 230] -- ns | Ty=25C,|-=3.3A Q Reverse Recovery Charge -- [1.16] -- | pC | di./dt=100A/us (4) Notes; 1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2) L=40mH, |,5=3.3A, V,p=50V, Rg=27Q, Starting T,=25C 4) Pulse Test: Pulse Width = 250us, Duty Cycle < 2% ( ( (3) lg <3.3A, di/dt < 110A/us, Vpp < BVpgg Starting T, =25C ( ( 5) Essentially Independent of Operating Temperature ee FAIRCHILD ee SEMICONDUCTORN-CHANNEL POWER MOSFET IRF720A Fig 1. Output Characteristics 10 V, oS 15V tov 80V 70V ov 55V 50V 10 | Bottom: 45V I, , Drain Gurrent [A] 1 oa wo 7 7 Notes : 7 - - 1. 250.5 Rilse Test 2% =23C ~ Me Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 5 Rosen) , [al @Nte : T =3C 0 1 i 1 i 1 1 I, , Drain Current [A] Fig 5. Capacitance vs. Drain-Source Voltage 0 3 6 9 2 Gas= Goat Gua ( Gus shorbed ) NN : Gos Sst Ge PON se) rss Gd Capacitance [pF] I, , Drain Grrent [A] & 491 Ty, , Reverse Drain Gumment [A] Fig 2. Transfer Characteristics Bc @Nebes : 1. Y, =0V 2. Yy =0V 3, 20 ps Pilse Bet - BC 1 1 4 6 8 Ves, 1 Gabe-Scuroe Voltage [V] Fig 4. Source-Drain Diode Forward Voltage ee FAIRCHILD Ed SEMICONDUCTORIRF720A N-CHANNEL POWER MOSFET 1.2 Fig 7. Breakdown Voltage vs. Temperature Drain-Source On-Resistance Fig 8. On-Resistance vs. Temperature 3.0 20h! DB beh ekin UB bce g LOL. oo ost ee po 1. Vg =10V 2.1, =16A a 15 56 DB 0 5 HD B MW BH HW IB T, , Junction Terperature [C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 0 4 in jn This Ama [eB . pete TPS -10 ys ne : en toms 7, ! wo fs = ~s 2b MIs : i sy i | ; } ~ @ Nttes : 191 1b . #4 1% =3 #4 : 2. 7, =150C 3, Single Pulse 192 1 0 1 1 1 1 0 10 0 we a 50 B 10 mB FT) V,, Drain-Source Voltage [V] T,, Case Tenperate [CT] Fig 11. Thermal Response 0 D [ <q . a L t 5 PDR0.5 70 7 re bein dint "a 0, _ @ Notes : eft et # r eZ ' =2.57 : : Y Or, yfty .. G r en 1 1 BH 0 oe mt 3. Tyy-To=Ppy *Z, 30 (t) 1071 ko 2 FF . - Tt ee 17 T : 3 rf single pulse pM S, : ay ts fe wf ety 1072 jo 4 1 je 1 aera 1 10-5 10-4 10-3 10? 10-1 10 10+ t, , Square Wave Pulse Duration [sec] ee FAIRCHILD Ed SEMICONDUCTORPOWER MOSFET IRF720A Fig 12. Gate Charge Test Circuit & Waveform . Current Regulator. Ves 12V T 7 1OV = Vos Ves nt DUT L 3mA t R, R, O WAN AN Ch Current Sampling (I) | Current Sampling (Ip) arge Resistor Resistor Fig 13. Resistive Switching Test Circuit & Waveforms Ry Voy Vou Vop (0.5 rated Vp, ) Vina : a 10V seh siete Oo ton loge Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms L BVpss L Eas= 7 Ly las SO Vos - TY 2 BVpss ~ Von Vary t, to obtain os Ip BVpss | - - - - required peak I, ro Ing | - - - - 4 ) Cc = Vop Ip (t) DUT Vop Vos (t) 10V j~<_ +, | Time ee FAIRCHILD Ed SEMICONDUCTORIRF720A POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT _~| + 7 Vos L <- om Is of L OH. Driver Ves Rg 7K) Same Type tL as DUT = Vop Vos dv/dt controlled by . Rg. I, controlled by Duty Factor . D. oO Vv Gate Pulse Width i GS D BS were ( Dri ) Gate Pulse Period 10V river | Igy Body Diode Forward Current Is (DUT ) di/de RM Body Diode Reverse Current Vos (DUT ) Body Diode Recovery dv/dt Ve Vop \ t t tT Body Diode Forward Voltage Drop ee FAIRCHILD Ed SEMICONDUCTORTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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