SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation Features * Complimentary to SS8050 * Collector Current: IC=1.5A * Collector Power Dissipation: PC=1W (TC=25xC) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25xC unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -40 Units V VCEO VEBO Collector-Emitter Voltage -25 V Emitter-Base Voltage -6 IC Collector Current V PC Collector Power Dissipation TJ TSTG -1.5 A 1 W Junction Temperature 150 C Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25xC unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100A, IE=0 Min. -40 BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 BVEBO Emitter-Base Breakdown Voltage IE= -100A, IC=0 -6 ICBO Collector Cut-off Current VCB= -35V, IE=0 IEBO Emitter Cut-off Current VEB= -6V, IC=0 hFE1 hFE2 hFE3 DC Current Gain VCE= -1V, IC= -5mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage VBE (on) 45 85 40 Typ. Max. Units V V V -100 nA -100 nA 170 160 80 300 IC= -800mA, IB= -80mA -0.28 -0.5 V IC= -800mA, IB= -80mA -0.98 -1.2 V Base-Emitter on Voltage VCE= -1V, IC= -10mA -0.66 -1.0 Cob Output Capacitance VCB= -10V, IE=0 f=1MHz fT Current Gain Bandwidth Product VCE= -10V, IC= -50mA 100 V 15 pF 200 MHz hFEClassification Classification B C D hFE2 85 ~ 160 120 ~ 200 160 ~ 300 (c) 2007 Fairchild Semiconductor Corporation SS8550 Rev. 1.0.0 www.fairchildsemi.com 1 SS8550 -- 2W Output Amplifier of Portable Radios in Class B Push-pull Operation March 2008 SS8550 -- Features Typical Performance Characteristics 1000 -0.5 VCE = -1V -0.4 IB=-3.5mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-4.0mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 100 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 VCE[V], COLLECTOR-EMITTER VOLTAGE -100 -100 VCE = -1V IC[mA], COLLECTOR CURRENT IC=10IB -1000 VBE(sat) -100 VCE(sat) -10 -0.1 -1 -10 -100 -10 -1 -0.1 -0.0 -1000 100 f=1MHz IE=0 10 1 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE -0.6 -0.8 -1.0 -1.2 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance (c) 2007 Fairchild Semiconductor Corporation SS8550 Rev. 1.0.0 -0.4 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 -0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT -1 -1000 Figure 2. DC current Gain -10000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Cob[pF], CAPACITANCE -1 Figure 6. Current Gain Bandwidth Product www.fairchildsemi.com 2 SS8550 Features (c) 2007 Fairchild Semiconductor Corporation SS8550 Rev. 1.0.0 www.fairchildsemi.com 3