Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDFS2P753Z tm Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode -30V, -3A, 115m Features General Description Max rDS(on) = 115m at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A VF < 500mV @ 1A VF < 580mV @ 2A This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Application RoHS Compliant DC - DC Conversion D D C 5 4 G D 6 3 S C 7 2 A C 8 1 A D C SO-8 S A Pin 1 G A MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed Ratings -30 Units V 25 V -3 -16 PD Power Dissipation EAS Single Pulse Avalanche Energy VRRM Schottky Repetitive Peak Reverse Voltage IO Schottky Average Forward Current TJ, TSTG Operating and Storage Junction Temperature Range A (Note 1a) 1.6 W (Note 2) 6 mJ (Note 1a) -20 V -2 A -55 to +150 C Thermal Characteristics RJA Thermal Resistance, Junction to Ambient RJC Thermal Resistance, Junction to Case (Note 1a) 78 (Note 1) 40 C/W Package Marking and Ordering Information Device Marking FDFS2P753Z Device FDFS2P753Z (c)2006 Fairchild Semiconductor Corporation FDFS2P753Z Rev.A Package SO-8 1 Reel Size 330mm Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode November 2006 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient -30 ID = -250A, referenced to 25C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V -21 VDS = -24V, mV/C -1 VGS = 0V TJ = 125C -100 VGS = 25V, VDS = 0V A 10 A -3 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250A, referenced to 25C rDS(on) gFS Drain to Source On-Resistance Forward Transconductance -1 -2.1 5 mV/C VGS = -10V, ID = -3.0A 69 115 VGS = -4.5V, ID = -1.5A 115 180 VGS = -10V, ID = -3.0A, TJ = 125C 97 162 VDS = -5V, ID = -3.0A 6 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz 340 455 pF 80 110 pF 65 100 pF f = 1MHz 18 VDD = -10V, ID = -3.0A VGS = -10V, RGEN = 6 7 14 ns 31 50 ns 18 33 ns 20 35 ns 6.6 9.3 nC 3.3 4.6 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at -10V VGS = 0V to -10V Qg(4.5) Total Gate Charge at -4.5V VGS = 0V to -4.5V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = -10V ID = -3.0A nC 1.3 nC 1.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -2.0A (Note 3) IF = -3.0A, di/dt = 100A/s -0.9 -1.2 V 20 30 ns 14 21 nC Schottky Diode Characteristics IR Reverse Leakage VR = -20V IF = 1A VF Forward Voltage IF = 2A FDFS2P753Z Rev.A 2 TJ = 25C -190 A TJ = 125C -66 mA TJ = 25C 0.5 TJ = 125C 0.39 TJ = 25C 0.58 TJ = 125C 0.53 V www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TJ = 25C unless otherwise noted 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. b) 135C/W when mounted on a minimun pad a) 78C/W when mounted on a 0.5in2 pad of 2 oz copper 2: Starting TJ = 25oC, L = 3mH, IAS = 2A, VDD = 27V, VGS = 10V 3: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDFS2P753Z Rev.A 3 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Notes: -ID, DRAIN CURRENT (A) VGS = -10V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 12 VGS = -5V 8 VGS = -4.5V VGS = -4V 4 VGS = -3.5V 0 0 1 2 3 4 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 5 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 3.5 3.0 VGS = 3.5V VGS = -4.5V 1.5 1.0 0.5 VGS = -10V 0 4 8 12 -ID, DRAIN CURRENT(A) 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 450 1.6 ID = -3A VGS = -10V 1.4 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On-Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 12 TJ = 150oC TJ = 25oC 8 4 TJ = -55oC 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 5. Transfer Characteristics FDFS2P753Z Rev.A ID = -3A 400 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 350 300 250 TJ = 150oC 200 150 100 50 TJ = 25oC 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 16 -ID, DRAIN CURRENT (A) VGS = -5V 2.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 VGS = 4V 2.5 20 10 VGS = 0V TJ = 150oC 1 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted 800 VDD = -5V 8 6 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -10V 4 VDD = -15V 2 0 0 2 4 6 -Qg, GATE CHARGE(nC) Ciss f = 1MHz VGS = 0V 20 0.1 8 Figure 7. Gate Charge Characteristics 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 30 3.5 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) Crss Figure 8. Capacitance vs Drain to Source Voltage 4 3 TJ = 25oC 2 TJ = 125oC 1 0.01 0.1 tAV, TIME IN AVALANCHE(ms) 1 P(PK), PEAK TRANSIENT POWER (W) 1ms 10ms 0.01 0.1 1 SINGLE PULSE TJ = MAX RATED TA = 25OC 100ms 1s 10s DC 10 80 -VDS, DRAIN to SOURCE VOLTAGE (V) 1.5 VGS = -4.5V 1.0 0.5 o RJA = 78 C/W 25 50 75 100 125 150 200 100 VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 10 150 - T A ----------------------125 TA = 25oC 1 0.6 -4 10 SINGLE PULSE -3 10 -2 -1 0 1 2 10 10 10 10 t, PULSE WIDTH (s) 10 3 10 Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area FDFS2P753Z Rev.A 2.0 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100us 0.1 VGS = -10V o 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 2.5 TA, AMBIENT TEMPERATURE ( C) 30 1 3.0 0.0 Figure 9. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) Coss 100 5 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted IR, REVERSE LEAKAGE CURRENT (mA) IF, REVERSE LEAKAGE CURRENT (A) 30 10 1 TJ = 125oC 0.1 0.01 TJ = 25oC 1E-3 0.0 0.4 0.8 1.2 1.6 2.0 10 TJ = 125oC 1 0.1 0.01 TJ = 25oC 1E-3 0 5 10 15 20 VR, REVERSE VOLTAGE (V) VF, REVERSE VOLTAGE (V) Figure 13. Schottky Diode Forward Voltage Figure 14. Schottky Diode Reverse Current 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve FDFS2P753Z Rev.A 6 www.fairchildsemi.com FDFS2P753Z Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics TJ = 25C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax Motion-SPM mWSaver OptoHiT OPTOLOGIC(R) OPTOPLANAR(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FlashWriter(R)* FPS PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R) * The Power Franchise(R) TinyBoost TinyBuck TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM (R) * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component in any component of a life support, device, or 1. Life support devices or sy stems are devices or sy stems which, (a) system whose failure to p erform can be rea sonably expected to are intended for surgical implan t into the body or (b) support or cause the failure o f the life support device or system, or to affect i ts sustain life, and (c) whose failure to perform when properly used i n safety or effectiveness. accordance with instructions for use provided in the la beling, can be reasonably expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 (c) Fairchild Semiconductor Corporation www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com