Semiconductor Group 1 Nov-27-1996
BC 846PN
Preliminary data
NPN/PNP Silicon AF Transistor Array
• For AF input stages and driver applivations
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
PIN Configuration
NPN-Transistor 1 = E 2 = B 6 = C
PNP-Transistor 4 = E 5 = B 3 = C
Type Marking Ordering Code Package
BC 846PN 1Os Q62702- SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO 65 V
Collector-base voltage
V
CBO 80
Collector-emitter voltage
V
CES 80
Emitter-base voltage
V
EBO 5
DC collector current
I
C 100 mA
Peak collector current
I
CM 200
Total power dissipation,
T
S = 115°C
P
tot 250 mW
Junction temperature
T
j 150 °C
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction ambient 1)
R
thJA ≤ 275 K/W
Junction - soldering point
R
thJS ≤ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 2 Nov-27-1996
BC 846PN
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
I
C = 10 mA,
I
B = 0
V
(BR)CEO 65 - - V
Collector-base breakdown voltage
I
C = 10 µA,
I
B = 0
V
(BR)CBO 80 - -
Collector-emitter breakdown voltage
I
C = 10 µA,
V
BE = 0
V
(BR)CES 80 - -
Base-emitter breakdown voltage
I
E = 10 µA,
I
C = 0
V
(BR)EBO 5 - -
Collector cutoff current
V
CB = 30 V,
I
E = 0 ,
T
A = 25 °C
V
CB = 30 V,
I
E = 0 ,
T
A = 150 °C
I
CBO
-
--
- 5
15 nA
DC current gain
I
C = 10 µA,
V
CE = 5 V
I
C = 2 mA,
V
CE = 5 V
h
FE
110
- 220
140 450
--
Collector-emitter saturation voltage 1)
I
C = 10 mA,
I
B = 0.5 mA
I
C = 100 mA,
I
B = 5 mA
V
CEsat
-
- 200
90 650
300 mV
Base-emitter saturation voltage 1)
I
C = 10 mA,
I
B = 0.5 mA
I
C = 100 mA,
I
B = 5 mA
V
BEsat
-
- 900
700 -
-
Base-emitter voltage
I
C = 10 mA,
V
CE = 5 V
V
BE -
580 -
660 820
750
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group 3 Nov-27-1996
BC 846PN
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics per Transistor
Transition frequency
I
C = 20 mA,
V
CE = 5 V,
f
= 100 MHz
f
T
- 250 - MHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - 2 - pF
Emitter-base capacitance
V
EB = 0.5 V,
f
= 1 MHz
C
eb - 10 -
Short-circuit input impedance
I
C = 2 mA,
V
CE = 5 V,
f
= 1 kHz
h
11e - 4.5 - kΩ
Open-circuit reverse voltage transfer ratio
I
C = 2 mA,
V
CE = 5 V,
f
= 1 kHz
h
12e - 2 - 10-4
Short-circuit forward current transfer ratio
I
C = 2 mA,
V
CE = 5 V,
f
= 1 kHz
h
21e - 330 - -
Open-circuit output admittance
I
C = 2 mA,
V
CE = 5 V,
f
= 1 kHz h22e - 30 - µS
Semiconductor Group 4 Nov-27-1996
BC 846PN
Total power dissipation
P
tot =
f
(
T
A*;
T
S)
* Package mounted on epoxy
020 40 60 80 100 120 °C 150
T
A
,T
S
0
50
100
150
200
mW
300
P
tot
T
A
S
T
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax /
P
totDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 5 Nov-27-1996
BC 846PN
Collector-base capacitance
C
CBO =
f
(
V
CBO)
Emitter-base capacitance
C
EBO =
f
(
V
EBO)Transition frequency
f
T =
f
(
I
C)
VCE = 5V
Collectot cutoff current
I
CBO =
f
(
T
A)
V
CB = 30V Collector-emitter saturation voltage
I
C = f (
V
CEsat),
h
FE = 20
Semiconductor Group 6 Nov-27-1996
BC 846PN
DC current gain
h
FE =
f
(
I
C)
V
CE = 5V Base-emitter saturation voltage
I
C = f (
V
BEsat),
h
FE = 20
h-parameter
h
e =
f
(
I
C)
V
CE = 5V h parameter
h
e =
f
(
V
CE)
I
C = 2mA
