New Product DF005MA thru DF10MA Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES * UL recognition, file number E54214 * Ideal for printed circuit boards * Applicable for automative insertion ~ * High surge current capability ~ * Solder dip 260 C, 40 s ~ * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC ~ TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. Case Style DFM PRIMARY CHARACTERISTICS IF(AV) 1A VRRM 50 V to 1000 V IFSM 30 A IR 5 A VF 1.1 V TJ max. 150 C MECHANICAL DATA Case: DFM Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA DFA005 DFA01 DFA02 DFA04 DFA06 DFA08 DFA10 100 200 400 600 800 1000 V Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage UNIT VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 40 C IF(AV) 1.0 A Peak forward surge current single sine-wave superimposed on rated load IFSM 30 A I2t 4.5 A 2s TJ, TSTG - 55 to + 150 C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Document Number: 88572 Revision: 14-Jan-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product DF005MA thru DF10MA Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) TEST CONDITIONS PARAMETER SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT Maximum instantaneous forward voltage drop per diode 1.0 A VF 1.1 V Maximum reverse current at rated DC blocking voltage per diode TA = 25 C TA = 125 C IR 5.0 500 A Typical junction capacitance per diode 4.0 V, 1 MHz CJ 25 pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA RJA RJL Typical thermal resistance (1) 40 15 UNIT C/W Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N DF06MA-E3/45 UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.403 45 50 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 30 60 Hz Resistive or Inductive Load 0.5 P.C.B. Mounted on 0.51 x 0.51" (13 x 13 mm) Copper Pads with 0.06" (1.5 mm) Lead Length Average Forward Output Current (A) Average Forward Output Current (A) 1.0 TJ = 150 C Single Sine-Wave 25 20 15 10 5 1.0 Cycle 0 0 20 40 60 80 100 120 140 150 1 100 10 Ambient Temperature (C) Number of Cycles at 60 Hz Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88572 Revision: 14-Jan-08 New Product DF005MA thru DF10MA Vishay General Semiconductor 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 10 1 0.1 TJ = 25 C Pulse Width = 300 s 1 % Duty Cycle 0.01 0.4 10 1 0.6 1.0 0.8 1.2 1.4 100 10 1 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 10 Transient Thermal Impedance (C/W) 100 Instantaneous Reverse Current (A) TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p TJ = 125 C 1 0.1 TJ = 50 C 0.01 0 20 40 60 80 10 1 0.1 0.01 100 1 0.1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s) Figure 4. Typical Reverse Leakage Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFM 0.255 (6.5) 0.315 (8.00) 0.245 (6.2) 0.285 (7.24) 0.335 (8.51) 0.320 (8.12) 0.080 (2.03) 0.050 (1.27) 0.130 (3.30) 0.120 (3.05) 0.045 (1.14) 0.035 (0.89) 0.185 (4.69) 0.150 (3.81) 0.023 (0.58) 0.018 (0.46) 0.205 (5.2) 0.195 (5.0) Document Number: 88572 Revision: 14-Jan-08 0.075 (1.90) 0.055 (1.39) 0.013 (0.33) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000