PESD5V0S1BLD
Bidirectional ESD protection diode
11 October 2018 Product data sheet
1. General description
Bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line
from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic
package with visible and solderable side pads.
2. Features and benefits
Bidirectional ESD protection of one line
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Low clamping voltage: VCL = 14 V
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 12 A
Max. peak pulse power: PPPM = 130W
Ultra low leakage current: IRM = 5 nA
AEC-Q101 qualified
3. Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff
voltage
Tamb = 25 °C - - 5 V
Cddiode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 35 45 pF
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K1 cathode 1
2 K2 cathode 2
Transparent
top view
21
DFN1006D-2
(SOD882D)
006aab041
1 2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PESD5V0S1BLD DFN1006D-2 leadless ultra small plastic package; 2 terminals; 0.65 mm pitch;
1 mm x 0.6 mm x 0.4 mm body
SOD882D
7. Marking
Table 4. Marking codes
Type number Marking code
PESD5V0S1BLD 1100 0000
VENDOR CODE
MARKING CODE
(EXAMPLE)
CATHODE BAR READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac477
Fig. 1. SOD882D binary marking code description
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 2 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPPM rated peak pulse power [1] [2] - 130 W
IPPM rated peak pulse current
tp = 8/20 µs
[1] [2] - 12 A
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
ESD maximum ratings
IEC 61000-4-2 (contact discharge) [3] [2] - 30 kVVESD electrostatic discharge
voltage MIL-STD-883 (human body model) - 10 kV
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin 2.
[3] Device stressed with ten non-repetitive ESD pulses.
t (µs)
0 403010 20
001aaa630
40
80
120
IPP
(%)
0
e-t
100 % IPP; 8 µs
50 % IPP; 20 µs
Fig. 2. 8/20 µs pulse waveform according to
IEC 61000-4-5
001aaa631
IPP
100 %
90 %
t
30 ns
60 ns
10 %
tr = 0.6 ns to 1 ns
Fig. 3. ESD pulse waveform according to IEC
61000-4-2
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 3 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff
voltage
Tamb = 25 °C - - 5 V
VBR breakdown voltage IR = 1 mA; Tamb = 25 °C 5.5 - 9.5 V
IRM reverse leakage current VRWM = 5 V; Tamb = 25 °C - 5 100 nA
Cddiode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 35 45 pF
IPP = 1 A; Tamb = 25 °C [1] [2] - - 10 VVCL clamping voltage
IPP = 12 A; Tamb = 25 °C [1] [2] - - 14 V
IR = 10 A; Tamb = 25 °C [2] [3] - 0.1 - ΩRdyn dynamic resistance
IR = -10 A; Tamb = 25 °C [2] [3] - 0.15 - Ω
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin 2.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI/ESD STM5.5.1-2008.
001aaa202
tp (µs)
1 104
103
10 102
102
103
PPP
(W)
10
Tamb = 25 °C
Fig. 4. Peak pulse power as a function of exponential
pulse duration; typical values
Tj (°C)
0 20015050 100
001aaa633
0.4
0.8
1.2
PPP
0
PPP(25°C)
Fig. 5. Relative variation of peak pulse power as a
function of junction temperature; typical values
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 4 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
001aaa203
VR (V)
0 542 31
30
26
34
38
Cd
(pF)
22
f = 1 MHz; Tamb = 25 °C
Fig. 6. Diode capacitance as a function of reverse
voltage; typcial values
001aaa204
Tj (°C)
75 150125100
10
1
102
10- 1
IRM(Tj)
IRM(Tj=85°C)
Fig. 7. Relative variation of reverse leakage current
as a function of junction temperature; typical
values
006aaa676
-VCL -VBR -VRWM
VCL
VBR
VRWM
-IRM
IRM
-IR
IR
-IPP
IPP
-+
Fig. 8. V-I characteristics for a bidirectional ESD protection diode
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 5 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
50 Ω
RZ
CZ
DUT
(DEVICE
UNDER
TEST)
GND
GND
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 ed. 2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 10 V/div
horizontal scale = 10 ns/div
006aac493
GND
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 10 V/div
horizontal scale = 10 ns/div
Fig. 9. ESD clamping test setup and waveforms
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 6 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
10. Application information
The PESD5V0S1BLD is designed for the protection of one bidirectional data or signal line from
the damage caused by ESD and surge pulses. The device may be used on lines where the signal
polarities are both positive and negative with respect to ground. The PESD5V0S1BLD provides a
surge capability of up to 130 W per line for an 8/20 µs waveform.
006aaa057
PESD5V0S1Bx
GND
signal line
Fig. 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 7 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
12. Package outline
12-05-01Dimensions in mm
0.65
0.30
0.22
0.30
0.22
0.55
0.45
0.65
0.55
0.4
max
1.05
0.95
2
cathode marking on top side (if applicable)
1
Fig. 11. Package outline DFN1006D-2 (SOD882D)
13. Soldering
solder lands
solder resist
solder paste
sod882d_fr
Dimensions in mm
1.4
0.2
0.3
0.4
1
1.3
0.8
(2×)
0.6
(2×)
0.7
(2×)
Fig. 12. Reflow soldering footprint for DFN1006D-2 (SOD882D)
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 8 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
14. Revision history
Table 7. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PESD5V0S1BLD v.2 20181011 Product data sheet - PESD5V0S1BLD v.1
Modifications • The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
• Legal texts have been adapted to the new company name where appropriate.
PESD5V0S1BLD v.1 20101012 Product data sheet
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 9 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification This document contains data from
the preliminary specification.
Product [short]
data sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 10 / 11
Nexperia PESD5V0S1BLD
Bidirectional ESD protection diode
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Characteristics.............................................................. 4
10. Application information............................................. 7
11. Test information.......................................................... 7
12. Package outline.......................................................... 8
13. Soldering..................................................................... 8
14. Revision history..........................................................9
15. Legal information......................................................10
© Nexperia B.V. 2018. All rights reserved
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Date of release: 11 October 2018
PESD5V0S1BLD All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 11 October 2018 11 / 11