SEMIKRON VpRM Ip (Tcase = ...C, full conduction) VRSM VRRM 40 A (92C) 40A (92C) 60A (86C) | 100A(84C) 400 V SKCH 40/04 | SKBT 40/04 | SKDT60/04 | SKDT 100/04 800 V SKCH 40/08 | SKBT40/08 | SKDT60/08 | SKDT 100/08 1200 V SKCH 40/12 | SKBT40/12 | SKDT60/12 | SKDT 100/12 1400 V SKCH 40/14 | SKBT 40/14 | SKDT60/14 | SKDT 100/14 Symbol | Conditions Skee ao SKDT 60 | SKDT 100 Ip Tease = 85C;inductive load 46A 61A 98 A Tamb = 45C, chassis" 15A 16A 20A P13/125 20A 21A 25A P1/120 32 A 34A 45A Tamb = 35C, P3/180F 55A 65A 95A Itsm Tyj = 25C, 10ms 470 A 470A 1000 A Tyj = 125C, 10 ms 400 A 400A 850 A it Tyj = 25C, 8,3..10ms 1100A?s | 1100A%s | 5000 As Tvj = 125C, 8,3...10 ms 800 A?s | 800As | 3600As (di/dt)cr | Tyj = 125C, 50 Hz 50A/us | dv/dtkr | Ty = 125C, 2/6 Vorm 500V/us lH Ty = 25C, typ./max. 100/200 mA 150/250 mA IL Ty = 25C, typ./max. 250/400 mA 300/600 mA Vr Ty = 25C; (lr = ...) 2,3V (75 A) | 2,3V (75A) |1,95V(200A) Vritoy | Ty = 125C 1,0V 1,0V 1,0V a Ty = 125C 16 mQ 16 mQ 45mQ Ipp; IRD | Ty = 125C; Vop = Vorm; Vap = VRRM 10mA 10 mA 15mA Ver |Ty= 25C,Vp =6V 3V let Ty = 25C, Vp =6V 150 mA Vep Ty = 125C, Vp = 6V 0,25 V Rinic | per thyristor/diode 1,0C/W | 1,0C/W | 0,85 C/W total 0,25 C/W 10,167 C/W 0,141 C/W Rincn _| total 0,05 C/W TW 40...4+ 125 C Tstg 40...4+ 125 C Visol 50...60 Hz: r.m.s. 2500 V ~ Mi case to heatsink Slunits/ 5Nm/44 lb. in. +15% Me busbars to US units 3Nm/26 lb. in. +15% terminals w 165g Case page B 11-67 SKCH40: G21 G21 G19 SKBT 40: G20 1) Painted metal sheet of minimum 250 x 250 x 1mm: Rthca = 1 8C/W SEMIPONT 2 Controllable Bridge Rectifiers SKCH 40 SKBT 40 SKDT 60 SKDT 100 aA ca ~O-F A ol AA AA SKCH SKBT + ABA ~ OF ABA SKDT Features e@ Fully controlled single and three phase bridge rectifiers e Robust plastic case with screw terminais e Large, isolated base plate e@ Blocking voltage to 1400 V @ High surge currents e Easy chassis mounting e@ UL recognized, file no. E 63 532 (M) Typical Applications SKCH, SKDT for DC drives with a fixed direction of rotation SKBT, SKDT for reversing DC drives Controlled field rectifiers for DC motors Controlled battery charger rectifiers by SEMIKRON B11~-55200 | SKBT 40 SK 150 100 50 P, VIOT Sch 0 9 Ib 10 20 30 40 A 9 Tomb Fig. 4a Power dissipation vs. output current and case temperature 300 Ww! SKDT 60 200 100 1,2 Pytor oc/w o a Ip 20 40 60 AO Top 50 100 Fig. 4b Power dissipation vs. output current and case temperature 360 (SKDT 100 300 0,1C/W 240 180 120 60 PyTOT C/W 9 Of 0 Ip 50 100 A 0 Tomb 50 300 iC Fig. 4c Power dissipation vs. output current and case temperature 50 100 C > 75 Tease fF 80 f 85 r 100 r 105 P 110 P13/125/1,3 C/W P1/120 /0,60 C/W e P1/200 |0,45 C/W L yas P1/120F|0,18 C/W 150 r 120 - 75 Tease - 80 - 90 r > p43/125 1,3 C/W P1/120 |0,60 C/W o- P1/200 |0,45 C/w L yg P1/120F (0,18 c/w r 120 150 - 75 Tease t 80 L 85 + 90 b 95 } 100 r 105 P 110 Rihoa P5/100 | 1,45C/W -P13/125|1,3 C/W | 429 P1/120 |0,60C/w oc P1/200 0,45 C/W L aos P1/1 1 qs0 125 /120F/0,18 C/W F115 B11-56 by SEMIKRON _____.sEMIKRON 'tlov} TSM 18 Itsm{A) =25 C |Tyj=125 C 6 SKBT 4u | 470 400 SKCH 40 | 470 400 SKOT 60 | 470 400 14 SKDT100 | 1000 850 1,2 1 O-VRRM 0,8 ly, > YRRM 0.6 TVRRM 04 10? + 101 102 ms 103 Fig. 5 Surge overload current vs. time 400 pe 200. SKDT 100 100 60 40 20 10 6 Qn 1- 2 4 10 20 40 60A/ys100 Fig. 8 b. Recovered charge vs. current decrease 1 4|SKBT 40 SKCH 40 80 SKDT 60 * 60 Tyjo125 125 25C 20 iT 0 Oo vy 1 2 Vv o3 Fig. 10a On-state characteristics of a single thyristor by SEMIKRON 100 CESKBT 40 TSKCH 40 40+ SKDT 60 rof 1. SL 4 6 10 20 40 G0A(s100 Fig. 8a Recovered charge vs. current decrease 100 4| SKCH 40 7 50 125 Ty = 125 1725 C 25 ip 0 0 Ee 0,5 1 15 Vv 2 Fig. 9 Forward characteristics of a single diode a 250 A SKDT 100 200 150 100 50 Tyj 7125 125 25 C iy 0 Ov O85 1 1,5 2 V 25 Fig. 10b On-state characteristics of a single thyristor B11-57 | oTSKBT 40 SKCH 40 SKDT 60 SKDT 100 = Yop Ig2 3 45 23465 10 Fig. 11 Gate trigger characteristics 4.5 1 SKCH 4SKBT 40 aid 0.5 Zitnit 108 t 10-2 10"! 10 401 ~s 102 Fig. 12 a Transient thermal impedance vs. time 23465 2345 2345 Ato? 1 SKDT 60 6 SKDT 100 ald 0.5 1/6 SKDT 100 Zitnit 03 t 102 10-1 10 101 5 10? Fig. 12 b Transient thermal impedance vs. time B11-58 by SEMIKRON _-:SEMIKRON SKCH 40 CaseG19 , SEMIPONT 2 wy oO , SEMIKRON | bue- 28 40 AKI Dimensions in mm Gt oN wok Kt Oq k20~ SKBT 40 CaseG20 , SEMIPONT 2 be 31 o Gt AK2 ~O4 AKI sok Dimensions in mm 40 -= 48 SKDT 60, SKDT 100 CaseG21 , SEMIPONT 2 Dimensions in mm by SEMIKRON B11-59 _ +Available Heatsinks Rectifier Heatsink w Rthca Rhea natural cooling forced cooling kg C/W SKB 15 P 5/100 0,28 1,7 - P 5/100 0,28 | 1,55 - SKB 25, SKD 25 { R 4/120 0,6 1,45 - P 1/120 | 1,3 0,75 - | SKBH 28, SKBT 28, P 5/100 0,28 18 - SKBZ 28, SKCH 28 R 4/120 0,6 14 - SKB 30, SKD 30, SKD 31 P 1/120 13 0,7 - P13/125 0,6 1,35 - SKB 33,SKB50,SKD50 | ~P1/120 1,3 0,65 0,30 P 5/100 0,28 1,45 - _ SKBT 40, SKCH 40 R 4/120 0,6 1,35 - SKB 60, SKD 60, SKDT 60 P 13/125 0,6 1,30 - SKB 52, SKD 62, SKB 72 P 15/180 1,7 0,8 0,30 SKD 82, SKD 100, SKDT 100| | P 1/120 1,3 065 | 0,20 SKD 110, SKD 160 P 3/180 3,1 0,5 0,18 P 1/200 2,2 0,52 0,18 B 11-60 by SEMIKRON