TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534
T4-LDS-0038 Rev. 2 (081508) Page 1 of 2
DEVICES LEVELS
2N5002 2N5004 JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5.5 V
Collector Current IC
IC (3) 5.0
10 A
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2) PT 2.0
58 W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance, Junction-to Case RθJC 3.0 °C/W
Thermal Resistance, Junction-to Ambient RθJA 88 °C/W
Note:
1) Derate linearly 11.4 mW/°C for TA > +25°C
2) Derate linearly 331 mW/°C for TC > +25°C
3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100mAdc V(BR)CEO 80 Vdc
Collector-Emitter Cutoff Current
VCE = 40Vdc, IB = 0 ICEO 50 µAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc, VBE = 0Vdc
VCE = 100Vdc, VBE = 0Vdc ICES
1.0
1.0
µAdc
mAdc
Emitter-Base Cutoff Current
VBE = 4.0Vdc, IC = 0
VBE = 5.5Vdc, IC = 0 IEBO
1.0
1.0 mAdc
TO-59
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/534
T4-LDS-0038 Rev. 2 (081508) Page 2 of 2
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer Ratio
IC = 50mAdc, VCE = 5.0Vdc
IC = 2.5Adc, VCE = 5.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
2N5002 20
30
20
---
90
---
IC = 50mAdc, VCE = 5.0Vdc
IC = 2.5Adc, VCE = 5.0Vdc
IC = 5.0Adc, VCE = 5.0Vdc
2N5004
hFE
50
70
40
---
200
---
Base-Emitter Voltage Non-Saturated
VCE = 5.0Vdc, IC = 2.5Adc
VBE 1.45 Vdc
Collector-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc VCE(sat) 0.75
1.5 Vdc
Base-Emitter Saturation Voltage
IC = 2.5Adc, IB = 250mAdc
IC = 5.0Adc, IB = 500mAdc VBE(sat) 1.45
2.2 Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emitter Small-Signal Short-Circuit. Forward Current
Transfer Ratio
IC = 500mA, VCE = 5.0Vdc, f = 10MHz 2N5002
2N5004
|hfe| 6.0
7.0
Output Capacitance
VCB = 10Vdc
Cobo 250 pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time IC = 5Adc; IB1 = 500mAdc ton 0.5
μs
Storage Time IB2 = -500mAdc ts 1.4
μs
Fall Time VBE(OFF) = 3.7Vdc tf 0.5
μs
Turn-Off Time RL = 6Ω toff 1.5
μs
SAFE OPERATING AREA
DC Tests
TC = +25°C, VCE = 0, tp = 1s, 1 Cycle
Test 1
VCE = 12Vdc, IC = 5.0Adc
Test 2
VCE = 32Vdc, IC = 1.7Adc
Test 3
VCE = 80Vdc, IC = 100mAdc
