TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DEVICES LEVELS 2N5002 2N5004 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 V Collector-Base Voltage VCBO 100 V Emitter-Base Voltage VEBO 5.5 V IC IC (3) PT 5.0 10 2.0 58 TJ, Tstg -65 to +200 C Thermal Resistance, Junction-to Case RJC 3.0 C/W Thermal Resistance, Junction-to Ambient RJA 88 C/W Collector Current Total Power Dissipation (1) @ TA = +25C @ TC = +25C (2) Operating & Storage Junction Temperature Range A W TO-59 Note: 1) Derate linearly 11.4 mW/C for TA > +25C 2) Derate linearly 331 mW/C for TC > +25C 3) This value applies for PW 8.3 ms, duty cycle 1% ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 80 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100mAdc Vdc Collector-Emitter Cutoff Current VCE = 40Vdc, IB = 0 ICEO 50 Adc Collector-Emitter Cutoff Current VCE = 60Vdc, VBE = 0Vdc VCE = 100Vdc, VBE = 0Vdc ICES 1.0 1.0 Adc mAdc Emitter-Base Cutoff Current VBE = 4.0Vdc, IC = 0 VBE = 5.5Vdc, IC = 0 IEBO 1.0 1.0 mAdc T4-LDS-0038 Rev. 2 (081508) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Forward-Current Transfer Ratio IC = 50mAdc, VCE = 5.0Vdc IC = 2.5Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc IC = 50mAdc, VCE = 5.0Vdc IC = 2.5Adc, VCE = 5.0Vdc IC = 5.0Adc, VCE = 5.0Vdc Symbol Min. Max. hFE 20 30 20 --90 --- 50 70 40 --200 --- 2N5002 2N5004 Unit Base-Emitter Voltage Non-Saturated VCE = 5.0Vdc, IC = 2.5Adc VBE 1.45 Vdc Collector-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc VCE(sat) 0.75 1.5 Vdc Base-Emitter Saturation Voltage IC = 2.5Adc, IB = 250mAdc IC = 5.0Adc, IB = 500mAdc VBE(sat) 1.45 2.2 Vdc Max. Unit 250 pF Max. Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Common Emitter Small-Signal Short-Circuit. Forward Current Transfer Ratio IC = 500mA, VCE = 5.0Vdc, f = 10MHz 2N5002 2N5004 Output Capacitance Symbol Min. |hfe| 6.0 7.0 Cobo VCB = 10Vdc SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time IC = 5Adc; IB1 = 500mAdc ton 0.5 s Storage Time IB2 = -500mAdc ts 1.4 s Fall Time VBE(OFF) = 3.7Vdc tf 0.5 s Turn-Off Time RL = 6 toff 1.5 s SAFE OPERATING AREA DC Tests TC = +25C, VCE = 0, tp = 1s, 1 Cycle Test 1 VCE = 12Vdc, IC = 5.0Adc Test 2 VCE = 32Vdc, IC = 1.7Adc Test 3 VCE = 80Vdc, IC = 100mAdc T4-LDS-0038 Rev. 2 (081508) Page 2 of 2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: JANTX2N5002 JAN2N5002 2N5002 JANTXV2N5002 Jantx2N5004 Jantxv2N5004 JAN2N5004 2N5004