This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.90.2 8.60.2 M Di ain sc te on na tin nc ue e/ d 5.90.2 Features 0.7+0.3 -0.2 0.70.1 13.50.5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. * Satisfactory forward current transfer ratio hFE collector current IC characteristics. * High collector-emitter voltage (Base open) VCEO * Small collector output capacitance (Common base, input open circuited) Cob * Makes up a complementary pair with 2SC2632, which is optimum for the pre-driver stage of a 40 W to 60 W output amplifier. 0.45+0.2 -0.1 (1.27) Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -150 V Collector-emitter voltage (Base open) VCEO -150 V Emitter-base voltage (Collector open) VEBO -5 V IC -50 mA Peak collector current ICP -100 mA Collector power dissipation PC 1 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 1 2 3 2.540.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package ue Collector current (1.27) (3.2) Absolute Maximum Ratings Ta = 25C 0.45+0.2 -0.1 tin Electrical Characteristics Ta = 25C 3C Symbol Conditions VCEO IC = - 0.1 mA, IB = 0 Emitter-base voltage (Collector open) VEBO IE = -10 A, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = -100 V, IE = 0 Forward current transfer ratio * hFE VCE = -5 V, IC = -2 mA VCE(sat) IC = -30 mA, IB = -3 mA te na nc e/ Di sc on Parameter Collector-emitter voltage (Base open) M ain Collector-emitter saturation voltage Transition frequency VCB = -10 V, IE = 10 mA, f = 200 MHz fT Cob Noise voltage NV Typ VCE = -10 V, IC = -1 mA, GV = 80 dB Rg = 100 k, Function = FLAT Max Unit V -5 V 130 -1 A 330 -1 V 200 VCB = -10 V, IE = 0, f = 1 MHz Pl Collector output capacitance (Common base, input open circuited) Min -150 150 MHz 5 pF 300 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE 130 to 220 185 to 330 Publication date: November 2002 SJC00012BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1124 PC Ta IC VCE IC VBE -80 1.2 -120 VCE = -5 V 0.8 IB = -500 A -450 A -400 A -350 A -300 A -250 A -200 A -60 -50 -100 Collector current IC (mA) Collector current IC (mA) 1.0 25C Ta = 75C 0.4 0.2 -30 -100 A -20 0 20 40 60 0 80 100 120 140 160 Forward current transfer ratio hFE -1 Ta = 75C 25C -25C -1 -4 -6 -8 -10 500 400 Ta = 75C 300 25C -25C 200 100 ue -1 -10 Collector current IC (mA) tin on Di sc nc e/ IE = 0 f = 1 MHz Ta = 25C 4 te na 5 M ain 3 Pl Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 2 1 0 -1 -10 -100 Collector-base voltage VCB (V) 2 0 -12 0 SJC00012BED -100 - 0.4 - 0.8 -1.2 -1.6 -2.0 Base-emitter voltage VBE (V) fT I E 300 VCE = -5 V 0 - 0.1 -100 Collector current IC (mA) 6 -10 hFE IC -10 - 0.01 - 0.1 -2 0 600 IC / IB = 10 - 0.1 -40 Collector-emitter voltage VCE (V) VCE(sat) IC -100 -60 -20 -50 A -10 Ambient temperature Ta (C) Collector-emitter saturation voltage VCE(sat) (V) -150 A Transition frequency fT (MHz) 0 -40 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0.6 -25C -80 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) Ta = 25C -70 VCB = -10 V Ta = 25C 250 200 150 100 50 0 1 10 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.