BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor SS8550
Document number: BL/SSSTC087 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 B-25 V
Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5
V
Collector cut-off current ICBO VCB=-40V,IE=0 -0.1 μA
Collector cut-off current ICEO VCE=-20V,IB=0 B -0.1 μA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA
VCE=-1V,IC=-100mA 120 400
DC current gain hFE VCE=-1V,IC=-800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA B -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA B -1.2 V
Transition frequency fT
VCE=-10V, IC= -50mA
f=30MHz 100 MHz
Output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF
Base-emitter voltage VBEF IE=-1.5A -1.6 V
CLASSIFICATION OF hFE(1)
Rank L H J
Range 120-200 200-350 300-400