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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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©2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
1
N-Channel PowerTrench® MOSFET
30 V, 21 A, 9.5 m:
Features
Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A
Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A
Advanced Package and Silicon combination
for low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
General Description
The has been designed to minimize losses in
conversion application. Advancements in both silicon
rDS(on) while maintaining excellent switching performance.
Applications
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
MOSFET Maximum Ratings TA= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID
Drain Current -Continuous (Package limited) TC= 25 °C 21
A
-Continuous (Silicon limited) TC= 25 °C51
-Continuous TA= 25 °C (Note 1a) 13.5
-Pulsed 80
EAS Single Pulse Avalanche Energy (Note 3) 54 mJ
PD
Power Dissipation TC = 25 °C42 W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTGOperating and Storage Junction Temperature Range -55 to +150 °C
RTJC Thermal Resistance, Junction to Case 3.3
°C/W
RTJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
8888Power 56 13 ’’ 12 mm 3000 units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
Power 56
Top
Pin 1
G
SSS
D
DDD
FDMS8888 NNNN
FDMS8888 N-Channel PowerTrench
®MOSFET
FDMS8888
FDMS8888 Rev.1.3
FDMS8888 power
and
package technologies have been combined to offer the lowest
June 2015
www.fairchildsemi.com
2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = 250 PA, referenced to 25 °C 19 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 PA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 2.5 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 PA, referenced to 25 °C -7 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = 10 V, ID
m:VGS = 4.5 V, ID = 10.9 A 11 14.5
VGS = 10 V, ID = 13.5 A, TJ = 125 °C
gFS Forward Transconductance VDD = 10 V, ID = 13.5 A 78 S
Ciss Input Capacitance VDS = 15 V, VGS = 0 V,
f = 1 MHz
1195 1585 pF
Coss Output Capacitance 234 315 pF
Crss Reverse Transfer Capacitance 161 245 pF
RgGate Resistance 0.9 2.5 :
td(on) Turn-On Delay Time
VDD = 15 V, ID = 13.5 A,
VGS = 10 V, RGEN = 6 :
918ns
trRise Time 612ns
td(off) Turn-Off Delay Time 23 27 ns
tfFall Time 410ns
QgTotal Gate Charge VGS = 0 V to 10 V
VDD = 15 V,
ID = 13.5 A
23 33 nC
QgTotal Gate Charge VGS = 0 V to 5 V 13 18 nC
Qgs Gate to Source Charge 3.5 nC
Qgd Gate to Drain “Miller” Charge 5.1 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS= 2.1 A (Note 2) 0.74 1.2 V
VGS = 0 V, IS= 13.5 A (Note 2) 0.84 1.2 V
trr Reverse Recovery Time IF = 13.5 A, di/dt = 100 A/Ps 20 32 ns
Qrr Reverse Recovery Charge 816nC
NOTES:
1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 50 °C/W when mounted on
a 1 in2pad of 2 oz copper.
= 13.5 A 8 9.5
12 14.5
©2011 Fairchild Semiconductor Corporation
FDMS8888 Rev.1.3
FDMS8888 N-Channel PowerTrench
®MOSFET
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
VGS = 3.5 V
VGS = 6 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
VGS = 3 V
VGS = 10 V
ID,DRAIN CURRENT (A)
VDS,DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
020 40 60 80
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS = 3.5 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID,DRAIN CURRENT (A)
VGS =4.5 V VGS = 6 V
VGS = 3 V
VGS =10 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 13.5 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ,JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
246810
0
10
20
30
40
TJ= 150 oC
ID= 13.5 A
TJ= 25 oC
VGS,GATE TO SOURCE VOLTAGE (V)
rDS(on),DRAIN TO
SOURCE ON-RESISTANCE (m:)
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
O n- R e si s ta nc e v s G a t e t o
Source Voltage
Figure 5. Transfer Characteristics
012345
0
20
40
60
80
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1E-3
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ= 175 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r c e t o D r ai n D i od e
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS8888 Rev.1.3
FDMS8888 N-Channel PowerTrench
®MOSFET
www.fairchildsemi.com
4
Figure 7.
05 10152025
0
2
4
6
8
10
ID= 13.5 A
VDD = 20 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 15 V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
2000
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 100
1
10 TJ= 100 oC
TJ= 25 oC
TJ= 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
20
Un c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
10
20
30
40
50
60
VGS = 4.5 V
Limited by Package
RTJC = 3.3 oC/W
VGS = 10 V
ID,DRAIN CURRENT (A)
TC,CASE TEMPERATURE (oC)
Ma x i m u m Co n t i n u o u s D r a i n
Current vs Case Temperature
Fi g u r e 11 . F orw a r d Bia s S afe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
10 s
1 s
DC
100 ms
10 ms
1 ms
100 us
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ= MAX RATED
RTJA = 125 oC/W
TA= 25 oC
Figure 12.
10-3 10-2 10-1 110100 1000
1
10
102
SINGLE PULSE
RTJA = 125 oC/W
TA= 25 oC
VGS = 10 V
P(PK),PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
0.2
500
S i n g l e P u ls e M a x i m u m
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
©2011 Fairchild Semiconductor Corporation
FDMS8888 Rev.1.3
FDMS8888 N-Channel PowerTrench
®MOSFET
www.fairchildsemi.com
5
Figure 13.
10-3 10-2 10-1 110
100 1000
0.01
0.1
1
SINGLE PULSE
RTJA = 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
0.003
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted
©2011 Fairchild Semiconductor Corporation
FDMS8888 Rev.1.3
FDMS8888 N-Channel PowerTrench
®MOSFET
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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