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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS8888 N-Channel PowerTrench(R) NNNN MOSFET 30 V, 21 A, 9.5 m: Features General Description Max rDS(on) = 9.5 m: at VGS = 10 V, ID = 13.5 A The FDMS8888 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Max rDS(on) = 14.5 m: at VGS = 4.5 V, ID = 10.9 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design Applications RoHS Compliant Synchronous Buck for Notebook Vcore and Server Notebook Battery Pack Load Switch Bottom Top S D D D S S Pin 1 D 5 4 G G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 C -Continuous (Silicon limited) TC = 25 C -Continuous TA = 25 C Units V 20 V 21 51 (Note 1a) 13.5 A 80 -Pulsed EAS Ratings 30 Single Pulse Avalanche Energy Power Dissipation (Note 3) PD TC = 25 C Power Dissipation TA = 25 C TJ, TSTG Operating and Storage Junction Temperature Range 54 42 (Note 1a) 2.5 -55 to +150 mJ W C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 3.3 (Note 1a) 50 C/W Package Marking and Ordering Information Device Marking 8888 Device FDMS8888 (c)2011 Fairchild Semiconductor Corporation FDMS8888 Rev.1.3 Package Power 56 1 Reel Size 13 '' Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com (R) FDMS8888 N-Channel PowerTrench MOSFET June 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 2.5 V 30 V 19 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.9 -7 mV/C VGS = 10 V, ID = 13.5 A 8 9.5 VGS = 4.5 V, ID = 10.9 A 11 14.5 VGS = 10 V, ID = 13.5 A, TJ = 125 C 12 14.5 VDD = 10 V, ID = 13.5 A 78 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1195 1585 234 315 pF pF 161 245 pF 0.9 2.5 : Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = 15 V, ID = 13.5 A, VGS = 10 V, RGEN = 6 : td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = 15 V, ID = 13.5 A 9 18 ns 6 12 ns 23 27 ns 4 10 ns 23 33 nC 13 18 nC 3.5 nC 5.1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V VGS = 0 V, IS = 13.5 A (Note 2) 0.84 1.2 V 20 32 ns 8 16 nC IF = 13.5 A, di/dt = 100 A/Ps NOTES: 1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 C, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V. (c)2011 Fairchild Semiconductor Corporation FDMS8888 Rev.1.3 2 www.fairchildsemi.com (R) FDMS8888 N-Channel PowerTrench MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID, DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX VGS = 10 V 60 VGS = 6 V VGS = 3.5 V VGS = 4.5 V 40 20 VGS = 3 V 0 0.0 0.5 1.0 1.5 2.0 2.5 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 3.5 VGS = 3 V 3.0 2.5 VGS = 3.5 V 2.0 1.0 VGS = 10 V 0.5 3.0 0 20 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 80 40 ID = 13.5 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 30 ID = 13.5 A 20 TJ = 150 oC 10 TJ = 25 oC 0 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 80 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 6 V VGS = 4.5 V 1.5 60 VDS = 5 V 40 TJ = 25 oC TJ = 150 oC 20 TJ = -55 oC 0 0 1 2 3 4 VGS = 0 V 10 1 TJ = 25 oC TJ = 175 oC 0.1 TJ = -55 oC 0.01 1E-3 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2011 Fairchild Semiconductor Corporation FDMS8888 Rev.1.3 3 1.2 www.fairchildsemi.com (R) FDMS8888 N-Channel PowerTrench MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2000 Ciss ID = 13.5 A 8 1000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 10 V VDD = 20 V 4 Coss f = 1 MHz VGS = 0 V 2 Crss 100 0.1 0 0 5 10 15 20 25 1 Figure 7. Gate Charge Characteristics 60 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 20 TJ = 100 oC TJ = 25 oC TJ = 125 oC 50 VGS = 10 V 40 30 VGS = 4.5 V 20 Limited by Package 10 o RTJC = 3.3 C/W 1 0.01 0.1 1 10 0 25 100 50 tAV, TIME IN AVALANCHE (ms) 150 P(PK), PEAK TRANSIENT POWER (W) 500 10 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RTJA = 125 oC/W DC o TA = 25 C 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 us 0.1 100 o 100 1 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.1 1 10 100 VGS = 10 V SINGLE PULSE RTJA = 125 oC/W 10 TA = 25 oC 1 0.2 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area (c)2011 Fairchild Semiconductor Corporation FDMS8888 Rev.1.3 2 10 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com (R) FDMS8888 N-Channel PowerTrench MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE 0.01 o RTJA = 125 C/W 0.003 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve (c)2011 Fairchild Semiconductor Corporation FDMS8888 Rev.1.3 5 www.fairchildsemi.com (R) FDMS8888 N-Channel PowerTrench MOSFET Typical Characteristics TJ = 25 C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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