NSVMMBT5551M3T5G - ON SEMICONDUCTOR

December, 2015 − Rev. 3 1Publication Order Number:

MMBT5551M3/D

MMBT5551M3

NPN High Voltage

Transistor

The MMBT5551M3 device is a spin−off of our popular SOT−23

three−leaded device. It is designed for general purpose high voltage

applications and is housed in the SOT−723 surface mount package.

This device is ideal for low−power surface mount applications where

board space is at a premium.

Features

•Reduces Board Space

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO 160 Vdc

Collector−Base Voltage VCBO 180 Vdc

Emitter−Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC60 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

FR−5 Board (Note 1)

TA = 25°C

Derate above 25°C

PD265

2.1

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 1) RqJA 470 °C/W

Total Device Dissipation

Alumina Substrate, (Note 2) TA = 25°C

Derate above 25°C

PD640

5.1

mW/°C

Thermal Resistance, Junction−to−Ambient

(Note 2) RqJA 195 °C/W

Junction and Storage Temperature TJ, Tstg −55 to

+150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

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Device Package Shipping†

ORDERING INFORMATION

MMBT5551M3T5G SOT−723

(Pb−Free) 8000 / Tape &

Reel

COLLECTOR

BASE

EMITTER

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOT−723

CASE 631AA

STYLE 1

AH M

AH = Specific Device Code

M = Date Code

MARKING

DIAGRAM

NSVMMBT5551M3T5G SOT−723

(Pb−Free) 8000 / Tape &

Reel

MMBT5551M3

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0) V(BR)CEO 160 − Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) V(BR)CBO 180 − Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc

Collector Cutoff Current

(VCB = 120 Vdc, IE = 0)

(VCB = 120 Vdc, IE = 0, TA = 100°C)

ICBO −

−100

100 nAdc

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0) IEBO − 50 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 50 mAdc, VCE = 5.0 Vdc)

hFE 80

−

250

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat) −

−0.15

0.20

Vdc

Base−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat) −

−1.0

1.0

Vdc

Collector Emitter Cut−off

(VCB = 10 V)

(VCB = 75 V)

ICES −

−50

100

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

MMBT5551M3

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

500

h , DC CURRENT GAIN

TJ = 125°C

-55°C

25°C

5.0

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

200

300

100

7.0

VCE = 1.0 V

VCE = 5.0 V

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

IC = 1.0 mA

0.3

0.005 0.01 0.2 0.5 1.0 2.0 20 50

0.8

0.5

0.4

0.9

0.7

0.6

0.2

0.02 0.05 0.1 10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

10 mA 30 mA 100 mA

5.0

Figure 3. Collector Cut−Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

101

10-5

0.4 0.3 0.1

100

10-1

10-2

10-3

10-4

0.2 0 0.1 0.2 0.40.3 0.60.5

VCE = 30 V

TJ = 125°C

75°C

25°C

IC = ICES

, COLLECTOR CURRENT (A)μIC

REVERSE FORWARD

IC, COLLECTOR CURRENT (mA)

1.0

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50 100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

0.1 0.2 0.5

Figure 4. “On” Voltages

0.8

0.6

0.4

0.2

3.0 300.3

MMBT5551M3

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TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

VR, REVERSE VOLTAGE (VOLTS)

100

1.0

0.2 0.5 1.0 2.0 5.0 10 20

Cibo

7.0

5.0

3.0

2.0

0.3 0.7 3.0 7.0

Cobo

10.2 V

Vin

10 ms

INPUT PULSE

VBB

-8.8 V

100

5.1 k

0.25 mF

Vin 100 1N914

Vout

VCC

30 V

3.0 k

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

Values Shown are for IC @ 10 mA

TJ = 25°C

IC, COLLECTOR CURRENT (mA)

1000

0.3 1.0 10 20 30 50

0.50.2

t, TIME (ns)

100

200

300

500

2.0 100 200

IC/IB = 10

TJ = 25°C

tr @ VCC = 120 V

3.0 5.0

tr @ VCC = 30 V

td @ VEB(off) = 1.0 V

VCC = 120 V

IC, COLLECTOR CURRENT (mA)

5000

t, TIME (ns)

100

200

300

500

3000

2000

1000

0.3 1.0 10 20 30 50

0.50.2 2.0 100 200

3.0 5.0

IC/IB = 10

TJ = 25°C

tf @ VCC = 120 V

tf @ VCC = 30 V

ts @ VCC = 120 V

IC, COLLECTOR CURRENT (mA)

2.5

qVC for VCE(sat)

qVB for VBE(sat)

Figure 5. Temperature Coefficients

TJ = - 55°C to +135°C

V, TEMPERATURE COEFFICIENT (mV/ C)°θ

2.0

1.5

1.0

0.5

- 0.5

- 1.0

- 1.5

- 2.0

- 2.5

1.0 2.0 5.0 10 20 50 1000.1 0.2 0.5 3.0 300.3

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances Figure 8. Turn−On Time

Figure 9. Turn−Off Time

0.001

0.01

0.1

1 10 100

VCE, COLLECTOR EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

100 ms

Figure 10. Safe Operating Area

10 ms

100 ms 10 ms 1 ms1 s

SOT−723

CASE 631AA−01

ISSUE D

DATE 10 AUG 2009

DIM MIN NOM MAX

MILLIMETERS

A0.45 0.50 0.55

b0.15 0.21 0.27

b1 0.25 0.31 0.37

C0.07 0.12 0.17

D1.15 1.20 1.25

E0.75 0.80 0.85

e0.40 BSC

H1.15 1.20 1.25

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

−Y−

−X−

X0.08 Y

XX = Specific Device Code

M = Date Code

GENERIC

MARKING DIAGRAM*

SCALE 4:1

XX M

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

STYLE 2:

PIN 1. ANODE

2. N/C

3. CATHODE

STYLE 3:

PIN 1. ANODE

2. ANODE

3. CATHODE

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. ANODE

*This information is generic. Please refer

to device data sheet for actual part

marking. Pb−Free indicator, “G”, may

or not be present.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 5:

PIN 1. GATE

2. SOURCE

3. DRAIN

L2 0.15 0.20 0.25

0.29 REF

TOP VIEW

BOTTOM VIEW

SIDE VIEW

RECOMMENDED

DIMENSIONS: MILLIMETERS

0.40

1.50

PACKAGE

OUTLINE

0.27

0.52

3X 0.36

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DOCUMENT NUMBER:

DESCRIPTION:

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