© 2005 Microchip Technology Inc. DS21666B-page 1
Features
• Space-Saving 5-Pin SC-70 and SOT-23
Packages
• Extremely Low Operating Current for Longer
Battery Life: 53 µ A (typ.)
• Very Low Dropout Voltage
• Rated 80 mA Output C urren t
• Requires only 1 µF Cerami c Output Capacitance
• High Output Voltage Accuracy: ±0.5% (typ.)
• 10 µsec (typ.) Wake-U p Time from SHDN
• Power-Saving Shutdown Mode: 0.05 µA(typ.)
• Overcurrent and Overtemperature Protection
• Pin Compatible Upgrade for Bipolar Regulators
Applications
• Cellular/GSM/PHS Phones
• Battery-op erat ed Sys tems
• Portable Computers
• Medical Instruments
• Elec t roni c Ga mes
• Pagers
General Description
The TC1016 is a high-accuracy (typically ±0.5%),
CMOS upgrade for bipolar low dropout regulators
(LDOs). The TC1016 is offered in both the SC-70 and
SOT-23 packages. The SC-70 package represents a
50% footprint reduction versus the popular SOT-23
package.
Developed specifically for battery-powered systems,
the devic e’s CMOS cons truc tio n consumes only 53 µA
typic al suppl y current over the en tire 80 mA operati ng
load range. This can be as mu ch as 60 times le ss tha n
the quiescent operating current consumed by bipolar
LDOs.
With small-space requirements and cost in mind, the
TC1016 was developed to be stable over the entire
input voltage and output current operating range using
low value (1 µF ceramic), low Equivalent Series
Resistance (ESR) output capacitors. Additional
integrated features (such as shutdown, overcurrent
and overtemperature protection) further reduce board
space and cost of the entire voltage-regulating
application.
Key performance parameters for the TC1016 are low
drop out voltage (150 mV (typ.) at 80 mA output
current), low supply current while shutdown (0.05 µA
typical) and fast stable response to sudden input
voltage and load changes.
Pin Configurations
SC-70
13
45
2
SHDN NC
VOUT
VIN
GND
TC1016
SOT-23
123
54
NCVOUT
SHDNGNDVIN
TC1016
TC1016
80 mA, Tiny CMOS LDO With Shutdown
TC1016
DS21666B-page 2 © 2005 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .........................................................6.5V
Power Dissi pation................Internally Limited (Note 7)
Operating Temperature .................-40°C < TJ < 125°C
Storage Temperature......................... -65°C to +150°C
Maximum Voltage On Any Pin........VIN + 0.3V to -0.3V
*Notice: Static-sensitive device. Unused devices must be
stored in conductive material. Protect devices from static dis-
charge and static fields. Stresses above those listed under
Absolute Maximum Ratings may cause permanent damage to
the device. These are stress ratings only and functional oper-
ation of the device at these or any other conditions above
those indicated in the operational sections of the
specifications is not implied. Ex posure to A bsolute M aximum
Rating Conditions for extended periods may affect device
reliability
ELECTRIC AL CHARACTERISTICS
VIN = VR + 1V, IL = 100 µA, CL = 1.0µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type specifications apply for
junction temperatures of – 40°C to +125°C.
Parameter Sym Min Typ Max Units Test Conditions
Input Operating Voltage VIN 2.7 —6.0 VNote 1
Maximum Outpu t Current IOUTMAX 80 ——mA
Output Voltage VOUT VR – 2.5% VR ±0.5 % VR + 2.5% VNote 2
VOUT Temperature Coefficient TCVOUT —40 — ppm/°C Note 3
Line Regulation (ΔVOUT/ΔVIN)/VR—0.010.2 %/V (VR + 1V) < VIN < 6V
Load Regulation (Note 4)ΔVOUT/VR—0.23 1%I
L = 0.1 mA to IOUTMAX
Dropout Voltage (Note 5)V
IN – VOUT —
—
—
2
100
150
—
200
300
mV IL = 100 µA
IL = 50 mA
IL = 80 mA
Supply Current IIN —5390 µA SHDN = VIH, IL = 0
Shutdown Supply Current IINSD — 0.05 0.5 µA SHDN = 0V
Power Supply Rejection Ratio PSRR — 58 — dB f =1 kHz, IL = 50 mA
Wake-Up Time
(from Shutdown mode) tWK —10—µsV
IN = 5V, IL = 60 mA,
CIN = 1 µF, COUT = 1 µF,
f = 100 Hz
Settling Time
(from Shutdown Mode) tS—32—µsV
IN = 5V, IL = 60 mA,CIN =
1µF, C
OUT = 1 µF, f =
100 Hz
Output Short Circuit Current IOUTSC — 120 — mA VOUT = 0V
Thermal Regulation VOUT/PD—0.04—V/WNotes 6, 7
Thermal Shutdown Die
Temperature TSD — 160 — °C
Thermal Shutdown Hysteresis ΔTSD —10—°C
Output Noise eN — 800 — nV/√Hz f = 10 kHz
SHDN Input High Threshold VIH 60 ——%V
IN VIN = 2.7V to 6.0V
SHDN Input Low Threshold VIL ——15 %VIN VIN = 2.7V to 6.0V
Note 1: The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ (VR + 2.5%)+VDROPOUT.
2: VR is the regulator voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 3.0V.
3:
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal
Regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to Ilmax at VIN = 6V for t = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the
thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 5.0 “Thermal Considerations” of this data sheet for more details.
TCVOUT
VOUTMAX VOUTMIN
–()106
×
VOUT TΔ×
--------------------------------------------------------------------------------------
=
© 2005 Microchip Technology Inc. DS21666B-page 3
TC1016
2.0 TYPICAL PERFORMANCE CURVES
FIGURE 2-1: Dropout Voltage vs. Output
Current.
FIGURE 2-2: Load Regulation vs.
Temperature.
FIGURE 2-3: Supply Current vs. Input
Voltage.
FIGURE 2-4: Dropout Voltage vs.
Temperature.
FIGURE 2-5: Short Circuit Current vs.
Input Voltage.
FIGURE 2-6: Supply Current vs.
Temperature.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
0.05
0.1
0.15
0.2
0.25
0 1020304050607080
Load Current (mA)
Dropout Voltage (V)
VOUT = 2.7V
+125°C
+25°C
-40°C
0.05
0.10
0.15
0.20
0.25
0.30
0.35
-45 -20 5 30 55 80 105 130
Temperature (°C)
Load Regulation (%)
VOUT = 2.7V
Full Load = 0 – 80 mA VIN = 3.3V
VIN = 3.7V
VIN = 6.0V
47.0
48.0
49.0
50.0
51.0
52.0
53.0
54.0
55.0
56.0
57.0
3.33.63.94.24.54.85.15.45.76.0
Input Voltage (V)
Supply Current (µA)
VOUT = 2.7V
+125°C
+25°C
-40°C
0.05
0.10
0.15
0.20
0.25
-45 -20 5 30 55 80 105 130
Temperature(°C)
Dropout Voltage (V)
VOUT = 2.7V
ILOAD = 80 mA
ILOAD = 50mA
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
123456
Input Voltage
Short Circuit Current (A)
VOUT = 2.7V
47.0
48.0
49.0
50.0
51.0
52.0
53.0
54.0
55.0
56.0
57.0
-45 -20 5 30 55 80 105 130
Temperature(°C)
Supply Current (µA)
VOUT = 2.7V
VIN = 6V
VIN = 3.3V
TC1016
DS21666B-page 4 © 2005 Microchip Technology Inc.
FIGURE 2-7: Dropout Voltage vs. Output
Current.
FIGURE 2-8: Load Regulation vs.
Temperature.
FIGURE 2-9: Supply Cur re nt vs.
Temperature.
FIGURE 2-10: Dropout Voltage vs.
Temperature.
FIGURE 2-11: Supply Current vs. Input
Voltage
FIGURE 2-12: Output V oltage vs. Supply
Voltage.
0
0.05
0.1
0.15
0.2
0.25
0 1020304050607080
Load Current (mA)
Dropout Voltage (V)
VOUT = 3.0V
+125°C
+25°C
-40°C
0.00
0.05
0.10
0.15
0.20
0.25
0.30
-45 -20 5 30 55 80 105 130
Tempera ture (°C)
Load Regulation (%)
VIN = 6.0V
V
IN
= 4.0V
V
IN
= 3.3V
VOUT = 3.0V
Full Load = 0 – 80 mA
47.0
48.0
49.0
50.0
51.0
52.0
53.0
54.0
-45-205 305580105130
Temperature (°C)
Supply Current (µA)
VOUT = 3.0V VIN = 6.0V
VIN = 3.3V
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
-45 -20 5 30 55 80 105 130
Temperature (°C)
Dropout Voltage (V)
VOUT = 3. 0V
ILOAD = 80 mA
ILOAD = 50 mA
47.0
48.0
49.0
50.0
51.0
52.0
53.0
54.0
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
Supply Current (µA)
VOUT = 3.0V
+125°C
+25°C
-40°C
2.789
2.790
2.791
2.792
2.793
2.794
2.795
2.796
2.797
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6
Input Voltage (V)
Output Voltage (V)
+25°C
+125°C
-40°C
VOUT = 2.8V
© 2005 Microchip Technology Inc. DS21666B-page 5
TC1016
FIGURE 2-13: Output Voltage vs. Output
Current.
FIGURE 2-14: Shutdown Current vs. Input
Voltage.
FIGURE 2-15: Power Supply Rejection
Ratio vs. Frequency.
FIGURE 2-16: Output Voltage vs.
Temperature.
FIGURE 2-17: Output Noise vs. Frequency.
FIGURE 2-18: Power Supply Rejection
Ratio vs. Frequency.
2.787
2.788
2.789
2.790
2.791
2.792
2.793
2.794
2.795
2.796
2.797
0 1020304050607080
Output Current (mA)
Output Voltage (V)
VIN = 3.3V
VIN = 6.0V
VOUT = 2.8 V
0.000
0.050
0.100
0.150
0.200
0.250
2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
Shutdown Current (µA)
+125°C
+25°C
-80
-70
-60
-50
-40
-30
-20
-10
01.E+01 1.E+03 1.E+05
Frequency (Hz)
PSRR(dB)
10 100 1K 10K 100K 1M
VINDC = 2.8V
VINAC = 100 mVp-p
VOUTDC = 1.8V
IOUT = 100 μA
COUT = 1 μF X7R Ceramic
2.789
2.790
2.791
2.792
2.793
2.794
2.795
2.796
2.797
2.798
-45 -20 5 30 55 80 105 130
Temperature (°C)
Output Voltage (V)
VIN = 6.0V
VIN = 3.3V
VIN = 4.0V
VOUT = 2.8V
0.01
0.1
1
10
100
10 100 1000 10000 100000 1000000
Frequency (Hz)
Noise (µV/√Hz)
VIN = 4.0V
VOUT = 3.0V
CIN = 1 μF
COUT = 1 μF
IOUT = 40 mA
-80
-70
-60
-50
-40
-30
-20
-10
010 1000 100000
Frequency (Hz)
PSRR(dB)
10 100 1K 10K 100K 1M
VINDC = 2.8V
VINAC = 10 0 mVp-p
VOUTDC = 1.8V
IOUT = 1 mA
COUT = 1 μF X7R Ceramic
TC1016
DS21666B-page 6 © 2005 Microchip Technology Inc.
FIGURE 2-19: Power Supply Rejection
Ratio vs. Frequency.
FIGURE 2-20: Wake-Up Respon se .
FIGURE 2-21: Wake-Up Respon se .
FIGURE 2-22: Load Transient Response.
FIGURE 2-23: Load Transient Response.
FIGURE 2-24: Line Transient Response.
-80
-70
-60
-50
-40
-30
-20
-10
010 1000 100000
Frequency (Hz)
PSRR(dB)
10 100 1K 10K 100K 1M
VINDC = 2.8V
VINAC = 100 mVp-p
VOUTDC = 1.8V
IOUT = 50 mA
COUT = 1 μF X 7R Ceramic
V
IN
= 2.8V
C
IN
= 10 µF
C
OUT
= 1 µF Ceramic V
OUT
= 1.8V
Shutdown Input
V
IN
= 2.8V
C
IN
= 10 µF
C
OUT
= 4.7 µF Ceramic
V
OUT
= 1.8V
Shutdown Input
VIN = 2.8V
CIN = 10 µF
COUT = 1 µF Ceramic
VOUT = 1.8V
IOUT = 0.1 mA to 60 mA
V
IN
= 2.8V
C
IN
= 10 µF
C
OUT
= 1 µF Ceramic
V
OUT
= 1.8V
I
OUT
= 0.1 mA to 60 mA
I
LOAD
= 60 mA
C
IN
= 0 µF
C
OUT
= 1 µF Ceramic
V
OUT
= 1.8V
I
OUT
= 2.8V to 3.8V
© 2005 Microchip Technology Inc. DS21666B-page 7
TC1016
FIGURE 2-25: Line Transient Response.
FIGURE 2-26: Line Transient Response.
FIGURE 2-27: Line Transient Response.
I
LOAD
= 60 mA
C
IN
= 0 µF
C
OUT
= 4.7 µF Ceramic
V
OUT
= 1.8V
V
OUT
= 2.8V to 3.8V
I
LOAD
= 100 µA
C
IN
= 0 µF
C
OUT
= 1 µF Ceramic
V
IN
= 4V to 5V
V
OUT
= 2.8V
I
LOAD
= 100 µA
C
IN
= 0 µF
C
OUT
= 10 µF Ceramic
V
IN
= 4V to 5V
V
OUT
= 2.8V
TC1016
DS21666B-page 8 © 2005 Microchip Technology Inc.
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
3.1 Shutdown Control Input (SHDN)
The regulator is fully enabled when a logic-high is
applied to SHDN . The regulator enters shutdown when
a logic-low is applied to this input. During shutdown, the
output voltage falls to zero and the supply current is
reduced to 0.05 µA (typ.)
3.2 Ground Terminal (GND)
For best performance, it is recommended that the
ground pin be tied to a ground plane.
3.3 Regulated Voltage Output (VOUT)
Bypass the regulated voltage output to GND with a
minimum capacitance of 1 µF. A ceramic bypass
capacitor is recomm ended for best performance.
3.4 Unregulat ed Su pply Input (VIN)
The minimum VIN has to meet two conditions in order
to ensure that the output maintains regulation:
VIN ≥2.7V and VIN ≥ [(VR + 2.5%) + VDROPOUT]. The
maximum VIN should be less than or equal to 6V.
Power dissipation may limit VIN to a lower potential in
order to maintain a junction temperature below 125°C.
Refer to Section 5.0 “Thermal Considerations”, for
determining junction temperature.
It is recomm ended that VIN be by pa ssed to G ND wi th a
ceramic capacitor.
5-Pin
SC-70 Pin No.
5-Pin SOT-23 Name Function
13
SHDN Shutdown control input
2 4 NC N o connect
3 2 GND Ground te rminal
45V
OUT Regulated voltage output
51V
IN Unregulated supply input
© 2005 Microchip Technology Inc. DS21666B-page 9
TC1016
4.0 DETAILED DESCRIPTION
The TC1016 is a precision, fixed-output, linear voltage
regulator. The internal linear pass element is a P-
channel MOSFE T. As with all P-channel CMOS LDOs,
there is a body drain diode, with the cathode connected
to VIN and the anode connected to VOUT (Figure 4-1).
As shown in Figure 4-1, the output voltage of the LDO
is sensed and divided down internally to reduce
external component count. The internal error amplifier
has a fixed, band gap reference on the inverting input,
with the sensed output voltage on the non-inverting
input. The error amplifier output will pull the gate
voltage down until the inputs of the error amplifier are
equal in order to regulate the output voltage.
By sensing the current in the P-channel MOSFET, the
maximum current delivered to the load is limited to a
typical value of 120 mA, preventing excessive current
from damagin g the Pr inted Circui t Board ( PCB) in the
eve nt of a shorted or faulted load.
An internal thermal sensing device is used to monitor
the junc tion te mperat ure o f the LDO . When the se nse d
temperature is over the set threshold of 160°C (typ.),
the P-channel MOSFET is turned off. When the
MOSFET is off, the power dissipation internal to the
device is almost zero. The device cools until the
junction temperature is approximately 150°C and the
MOSFET is turned on. If the internal power dissipation
is still high enough for the junction to rise to 160°C, it
will again shut off and cool. The maximum operating
junction temperature of the device is 125°C. Steady-
state operation at or near the 160°C overtemperature
point can lead to permanent damage of the device.
The output voltage (VOUT) remains stable over the
entire input operating voltage range (2.7V to 6.0V), as
well as the entire load range (0 mA to 80 mA). The
output voltage is sensed through an internal resistor
divider and compared with a precision internal voltage
reference. Several fixed-output voltages are available
by changing the value of the internal resistor divi der.
Figure 4-2 shows a typical application circuit. The reg-
ulator is enabled anytime the shutdown input pin is at
or above VIH, and shutdown (disabled) anytime the
shut down inpu t pin is below V IL. For applications where
the SHDN feat ure is no t used, ti e the SHD N pin directl y
to the input supply voltage source. While in shutdown,
the supply current decreases to 0.05 µA (typ.) and the
P-channel MOSFET is turned off.
As shown in Figure 4-2, batteries have internal source
impedance. An input capacitor in used to lower the
input im pedance of the LDO. In some applications, high
input impedance can cause the LDO to become
unstable. Adding more input capacitance can
compensate for this.
FIGURE 4-1: TC1016 Block Diagram.
FIGURE 4-2: Typic al App li ca tio n Circui t.
+
-EA
VOUT
VREF
SHDN
VIN
5
4
R1R2
1
2
3
SHDN
GND
VIN
NC
Curre nt Limi t
Over
Error Amp
Feedback Resistors
Control
Temp.
Body
Diode
V
OUT
5
4
1
2
3
SHDN
GND
V
IN
NC
BATTERY
R
SOURCE
C
IN
1µF Ceramic
C
OUT
1µF Ceramic
TC1016
Load
TC1016
DS21666B-page 10 © 2005 Microchip Technology Inc.
4.1 Input Capacitor
Low input source impedance is necessary for the LDO
to operate properly. When operating from batteries, or
in applications with long lead length (> 10") between
the input source and th e LDO , so me input capacitance
is required. A minimum of 0.1 µ F is recommended for
most applications and the capacitor should be placed
as close to the input of the LDO as is practical. Larger
input capacitors will help reduce the input impedance
and further reduce any high-frequency noise on the
input and output of the LDO.
4.2 Output Capacitor
A minimum output capacitance of 1 µF for the T C10 16
is required for stability. The ESR requirements on the
output cap acitor are between 0 an d 2 ohms. The output
cap acitor sh ould b e loca ted as clos e to th e LDO o utput
as is practical. Ceramic materials X7R and X5R have
low temperature coefficients and are well within the
acceptable ESR range required. A typical 1 µF X5R
0805 capacitor has an ESR of 50 milli-ohms. Larger
output capacitors can be used with the TC1016 to
improve dynamic behavior and input ripple rejection
performance.
Ceramic, aluminum electrolytic or tantalum capacitor
types can be used. Since many aluminum electrolytic
capacitors freeze at approximately –30°C, ceramic or
solid tantalums are recommended for applications
operating below –25°C. When operating from sources
other than batteries, supply noise rejection and tran-
sient response can be improved by increasing the
value of the input and output capacitors, and by
employing passive filtering techniques.
4.3 Turn-On Response
The turn on response is defined as two separate
response cat ego ries , Wake-up Time (tWK) and Settling
Time (tS).
The TC1016 has a fast tWK (10 µsec, typ.) when
released from shutdown. Figure 4-3 provides the
TC1016’s tWK. The tWK is defined as the time it takes
for the output to rise to 2% of the VOUT value after being
released from shutdown.
The total turn-on response is defined as the tS (see
Figure 4-3). The tS (inclusive with tWK) is defined a s the
condition when the output is within 98% of its fully
enabled value (42 µsec, ty p.) when releas ed from shu t-
down. The settling time of the output voltage is
dependent on load conditions and output capacitance
on VOUT (RC resp ons e).
Table 4-1 demonstrates the typical turn-on response
timing for differen t input vol tage powe r-up fre quencies:
VOUT = 2.8V , VIN = 5.0V , IOUT = 60 mA and COUT = 1 µF .
TABLE 4-1: TYPICAL TURN-ON
RESPONSE TIMING
FIGURE 4-3: Wake-Up Time from Shutdown.
Frequency Typical (tWK) Typical (tS)
1000 Hz 5.3 µsec 14 µsec
500 Hz 5.9 µsec 16 µsec
100 Hz 9.8 µsec 32 µsec
50 Hz 14.5 µsec 52 µsec
10 Hz 17.2 µsec 77 µsec
VIH
tS
tWK
VOUT
98%
2%
VIL
SHDN
© 2005 Microchip Technology Inc. DS21666B-page 11
TC1016
5.0 THERMAL CONSIDERATIONS
5.1 Thermal Shutdown
Integrated thermal-protection circuitry shuts the
regulator off when die temperature exceeds
approximately 160°C. The regulator remains off until
the die temperature drops to approximately 150°C.
5.2 Power Dissipation
The TC1016 is available in the SC-70 package. The
thermal resistance for the SC-70 package is approxi-
mately 450°C/W when the copper area used in the
PCB layo ut is similar to the JEDEC J51 -7 high therma l
conductivity or Semi G42-88 standards. For applica-
tions with larger or thicker copper areas, the thermal
resistance can be lowered. See AN792 “A Method to
Determine How Much Power a SOT23 Can Dissipate in
an Ap plica tion” (DS00792), for a method to determine
the thermal resistance for a particular application.
The TC1016 power dissipation capability is dependant
upon several variables: input voltage, output voltage,
load current, ambient temperature and maximum
junction temperature. The absolute maximum steady-
stat e junction temperature is rated at 125°C. The power
dissipation within the device is equal to:
EQUATION 5-1:
The VIN x IGND term is typically very small when com-
pared to the (VIN-VOUT) x ILOAD term simplifying the
power di ssipation within the LDO to be:
EQUATION 5-2:
To determine the maximum power dissipation
capability, the following equation is used:
EQUATION 5-3:
Given the f ollowing example:
Find:
1. Internal pow e r diss ip a tio n:
2. Junction temperature:
3. Maximum allowable dissipation:
In this example, the TC1016 dissipates approximately
82.2 mW and the junction temperature is raised 37°C
over the 55°C ambient to 92°C. The absolute maximum
power dissipation is 155 mW when given a maximum
ambient temperature of 55°C.
Input voltage, output voltage or load current limits can
also be determined by substituting known values in
Equation 5-2 and Equation 5-3.
5.3 Layout Considerations
The primary path for heat conduction out of the SC-70
package is through the package leads. Using heavy,
wide traces at the pads o f the dev ice wil l facili tate the
removal of heat within the package, thus lowering the
thermal resistance RθJA. By lowering the thermal
resistance, the maximum internal power dissipation
capability of the package i s increas ed.
FIGURE 5-1: Suggested layout
PDVIN VOUT
–()ILOAD VIN IGND
×+×=
PDVIN VOUT
–()ILOAD
×=
PDMAX TJ_MAX TA_MAX
–()
RθJA
-------------------------------------------------
=
Where:
TJ_MAX = maximum junction temperature allowed
TA_MAX = the maximum ambient temperature allowed
RθJA = the thermal resistance from junction-to-air
VIN = 3.0V to 4.1V
VOUT = 2.8V ±2.5%
ILOAD = 60 mA (output current)
TAMAX = 55°C (max. ambient temp.)
PDMAX VIN_MAX VOUT_MIN
–()ILOAD
×=
4.1V2.8 0.975()×–()60mA×=
82.2mW=
TJ_MAX PDMAX RθJA
×=82.2mWatts 450°C/W TAMAX
+×=
92°C=37°C55°C+=
PDTJ_MAX TA_MAX
–
RθJA
--------------------------------------------
=
155mW=
125°C55°C–
450°C/W
-----------------------------------
=
SHDN
U1
V
IN
V
OUT
GND
C
1
C
2
TC1016
DS21666B-page 12 © 2005 Microchip Technology Inc.
6.0 PACKAGE INFORMATION
6.1 Package Marking Information
5-Lead SC-70 Example:
XXN (Front)
YWW (Back) AE7 (Front)
432 (Back)
5-Lead SC-70 Example:
XXNN AE74
Part Number Code
TC1016 – 1.8VLT AE
TC1016 – 1.85VLT AW
TC1016 – 2.6VLT AF
TC1016 – 2.7VLT AG
TC1016 – 2.8VLT AH
TC1016 – 2.85VLT AJ
TC1016 – 2.9VLT AK
TC1016 – 3.0VLT AL
TC1016 – 3.3VLT AM
TC1016 – 4.0VLT AP
Legend: XX...X Customer-specific in formation*
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar ye ar)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-fr ee JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the full Mic rochip part nu mber ca nn ot be marked o n one lin e, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
© 2005 Microchip Technology Inc. DS21666B-page 13
TC1016
6.1 Package Marking Information (Continued)
5-Lead SOT-23
Part Number Code
TC1016 – 1.8VCT HK
TC1016 – 1.85VCT HW
TC1016 – 2.6VCT HL
TC1016 – 2.7VCT HM
TC1016 – 2.8VCT HP
TC1016 – 2.85VCT HQ
TC1016 – 2.9VCT HR
TC1016 – 3.0VCT HS
TC1016 – 3.3VCT HT
TC1016 – 4.0VCT HU
Example
XXNN HK73
TC1016
DS21666B-page 14 © 2005 Microchip Technology Inc.
5-Lead Plastic Small Outline Transistor (LT) (SC-70)
Dimensions: inches (mm
)
0.300.15.012.006BLead Width
0.180.10.007.004
c
Lead Thickness
0.300.10.012.004LFoot Length
2.201.80.087.071DOverall Length
1.351.15.053.045
E1
Molded Package Width
2.40
1.80.094.071EOverall Width
0.100.00.004.000
A1
Standoff
1.000.80.039.031
A2
Molded Package Thickness
1.100.80.043.031AOverall Height
0.65 (BSC).026 (BSC)
p
Pitch
55
n
Number of Pins
MAX
NOM
MINMAX
NOM
MINDimension Limits
MILLIMETERS*INCHESUnits
exceed .005" (0.127mm) per side.
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
Notes:
JEITA (EIAJ) Standard: SC-70
Drawing No. C04-061
*Controlling Parameter
L
E1
E
c
D
1
B
p
A2
A1
A
Q1
Top of Molded Pkg to Lead Shoulder
Q1.004.016 0.10 0.40
n
© 2005 Microchip Technology Inc. DS21666B-page 15
TC1016
5-Lead Plastic Small Outline Transistor (OT) (SOT-23)
10501050
β
Mold Draft Angle Bottom
10501050
α
Mold Draft Angle Top
0.500.430.35.020.017.014BLead Width
0.200.150.09.008.006.004
c
Lead Thickness
10501050
φ
Foot Angle
0.550.450.35.022.018.014LFoot Length
3.102.952.80.122.116.110DOverall Length
1.751.631.50.069.064.059E1Molded Package Width
3.002.802.60.118.110.102EOverall Width
0.150.080.00.006.003.000A1Standoff
1.301.100.90.051.043.035A2Molded Package Thickness
1.451.180.90.057.046.035AOverall Height
1.90.075
p1
Outside lead pitch (basic)
0.95
.038
p
Pitch
55
n
Number of Pins
MAXNOMMINMAXNOMMINDimension Limits
MILLIMETERSINCHES*Units
1
p
D
B
n
E
E1
L
c
β
φ
α
A2
A
A1
p1
exceed .005" (0.127mm) per side.
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
Notes:
EIAJ Equivalent: SC-74A
Drawing No. C04-091
*Controlling Parameter
TC1016
DS21666B-page 16 © 2005 Microchip Technology Inc.
NOTES:
© 2005 Microchip Technology Inc. DS21666B-page 17
TC1016
APPENDIX A: REVISION HISTORY
Revision B (March 2005)
• Updated Section 6.0 “Package Information” to
include old and new packaging ex am ple s, as w e ll
as replaced SC-70 package diagram with up-to-
date version. Added additional voltage options
• Added SOT-23 package and voltage options.
• Applied new template and rearranged sections to
be consistent with cur rent doc umentation.
.Revision A (October 2001)
• Original Release of this D ocument.
TC1016
DS21666B-page 18 © 2005 Microchip Technology Inc.
NOTES:
© 2005 Microchip Technology Inc. DS21666A-page19
TC1016
PRODUCT IDENTIFICATION SYSTEM
To order or ob tain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: TC1016: 80 mA Tiny CMOS LDO with Shutdown
Voltage Options*:
(Standard) 1.8V
1.85V
2.6V
2.7V
2.8V
2.85V
2.9V
3.0V
3.3V
4.0V
* Other voltage options available. Please contact your local
Microchip sales office for details.
Temp er atu re R ang e: V = -40°C to +125°C
Packages: LTTR = 5-pin SC-70 (Tape and Reel)
CTTR = 5-pin SOT- 23 (Tape and Reel)
Examples:
a) TC1016-1.8VCTTR: 80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
a) TC1016-1.8VLTTR: 80 mA Tiny CMOS LDO
with Shutdown,
SC-70 Package.
b) TC1016-1.85VCTTR: 80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
c) TC1016-1.85VL TTR: 80 mA Tiny CMOS LDO
with Shutdown ,
SC-70 Package.
d) TC1016-2.6VCTTR: 80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
e) TC1016-2.6VLTTR: 80 mA Tiny CMOS LDO
with Shutdown ,
SC-70 Package.
f) TC1016-2.7VCTTR:80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
g) TC1016-2.7VLTTR:80 mA Tiny CMOS LDO
with Shutdown ,
SC-70 Package.
h) TC1016-2.8VCTTR: 80 mA Tiny CMOS
LDO with Shutdown,
SOT-23 Package.
i) TC1016-2.8VLTTR: 80 mA Tiny CMOS LDO
with Shutdown ,
SC-70 Package.
j) TC1016-2.85VLTTR: 80 mA Tiny CMOS LDO
with Shutdown ,
SC-70 Package.
PART NO. X.XX X
TemperatureVoltage
Options
Device Range
XXXX
Package
TC1016
DS21666A-page20 © 2005 Microchip Technology Inc.
NOTES:
© 2005 Microchip Technology Inc. DS21666B-page 21
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-
RANTIES OF ANY KIN D WHETHER EXPRESS OR IMPLIED ,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. U se of Microc hip’s products as critical com ponents in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICST ART ,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory , MXDEV, MXLAB,
PICMASTER, SEEVAL, SmartSensor and The Embedded
Control Solutions Company are registered trademarks of
Microchip Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial
Prog ra mmin g, IC SP, ICEPIC, MPASM, M PL I B, M PL I N K,
MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail,
PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance and WiperLock are trademarks of Microchip
Tec hnolo gy Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2005, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.
• Microchip believes that its family of products is one of t he most secure famili es of its kind on the market today, when used in the
intended manner and under normal conditions.
• The re are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellec tual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is c onstantly evolving. We a t Microchip are commit ted to continuously improving the code protect ion f eatures of our
products. Attempts to break Microchip’ s code protection f eature may be a violati on of t he Digit al Millennium Copyright Act. If such act s
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bi t MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, micro peripherals, nonvolat ile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS21666B-page 22 © 2005 Microchip Technology Inc.
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