2N7002W N-Channel MOSFET 3 DRAIN 3 Features: *Low On-Resistance : 7.5 *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V(TYE) *Fast Switching Speed : 7ns 1 1 GATE 2 SOT-323(SC-70) 2 SOURCE Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TA=25 C) ID 115 mA Power Dissipation (TA=25 C) PD 200 mW R JA 625 C/W TJ, Tstg -55 to 150 C Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Device Marking 2N7002W=K72 WEITRON http://www.weitron.com.tw 2N7002W Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol Min Typ Max Unit Static (1) Drain-Source Breakdown Voltage VGS=0V, ID=10 uA V(BR)DSS 60 70 - V Gate-Threshold Voltage VDS=V GS , ID =-250uA VGS (th) 1.0 1.5 2.0 V Gate-body Leakage VGS= _+20V, VDS=0V IGSS - - + _ 10 nA Zero Gate Voltage Drain Current VDS=60V, VGS=0V @ Tc=25 C VDS=60V, VGS=0V @ Tc=125 C IDSS - - 1.0 500 uA 0.5 1.0 - A - 3.2 4.4 7.5 13.5 gfs 80 - - mS Input Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss - 22 50 Output Capacitance VDS=25V, VGS=0V, f=1MHZ Coss - 11 25 Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Crss - 2.0 5.0 Turn-On Time VDD=30V, RL=150 ,ID=0.2A VGEN=10V, RGEN=25 td(on) - 7.0 20 ns Turn-Off Time VDD=30V, RL=150 , ID=0.2A VGEN=10V, RGEN=25 td(off ) - 11 20 ns On-State Drain Current VGS=10V, VDS=7.5V ID (on) Drain-Source On-Resistance VGS=5V, ID=0.05A @ Tj=25 C VGS=10V, ID=0.5A @ Tj =125 C RDS (on) Forward Transconductance VDS=10V, ID=0.2A Dynamic PF Switching Note: 1. Pulse Test: pulse width <_ 300us, duty cycle <_ 2% WEITRON http://www.weitron.com.tw 2N7002W 2.0 1.0 Ta =25 C VGS=10V 1.6 VGS=10V 1.4 9V 1.2 8V I D ,DRIAN CURRENT(A) I D ,DRIAN CURRENT(A) 1.8 1.0 7V 0.8 0.6 6V 0.4 5V 0.2 4V 3V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0.4 0.2 0 VGS=10V ID =200mA 1.6 1.4 1.2 1.0 0.8 0.6 + 20 + 60 + 100 T ,TEMPERATURE( C) FIG.3 Temperature Versus Static Drain-Source On-Resistance WEITRON http://www.weitron.com.tw + 140 VGS(th) ,THRESHOLD VOLTAGE (NORMZLIZED) (NORMALIZED) IDS(on) ,STATIC DRAIN-SOURCE ON-RESISTANCE 2.2 - 20 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 FIG.2 Transfer Characteristics 2.4 0.4 - 60 1.0 VGS ,GATE SOURCE VOLTAGE(V) FIG.1 Ohmic Region 1.8 125 C 0.6 VDS ,DRAIN SOURCE VOLTAGE(V) 2.0 25 C -55 C 0.8 1.2 1.05 VDS=VGS ID =1.0mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 - 60 - 20 + 20 + 60 + 100 T ,TEMPERATURE( C) FIG.4 Temperature Versus Gate Threshold Voltage + 140 2N7002W SOT-323 Outline Demensions Unit:mm A SOT-323 B T OP V IE W C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25