MMBT2222A
Document number: DS30041 Rev. 16 - 2
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MMBT2222A
40V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Features
• Epitaxial Pl anar Die Const ruction
• Complementary PNP Type: MMBT2907A
• Ideal for Low Power Amplificat i on and Switching
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimon y Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SOT23
• Case Material: Molded Plast ic, “Green” Molding Com pound;
UL Flamm ability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Ti n Finish; Solderable per MIL-STD-202,
Method 208
• Weight: 0.008 grams (Approximate)
Ordering Information (Notes 4 & 5)
Product
Status
Compliance
Reel Size (inches)
Quantity per Reel
MMBT2222A-7-F
Active
AEC-Q101
7
3,000
MMBT2222A-13-F
Active
AEC-Q101
13
10,000
MMBT2222AQ-7-F
Active
Automotive
7
3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead -free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products ar e AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except whe re spe c ifi e d. F or mo re info rm at io n, pl ea se ref er to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
C
D
E
F
G
H
I
J
K
L
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
K1P
YM
Device Symbol
Top View
Pin-Out
Top View
SOT23
C
E
B
C
E
B
K1P = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex:
D = 2016)
M
or M = Month (ex: 9 = September)
SOT23
MMBT2222A
Document number: DS30041 Rev. 16 - 2
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MMBT2222A
Absolute Maximum Rati ngs (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40 V
Emitter-Base Voltage
VEBO
6.0 V
Collector Current
IC
600
mA
Peak Collector Current
ICM
800
mA
Peak Base Current
IBM
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified. )
Characteristic
Symbol
Value
Unit
Collector Power Dissipation
(Note 6)
PD
310
mW
(Note 7)
350
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
403
°C/W
(Note 7)
357
Thermal Resistance, Junction to Leads (Note 8)
RθJL
350 °C/W
Operating and Storage Tem perature Range
TJ,TSTG
-55 to +150 °C
ESD Rating s (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Cl a ss
Electrostat ic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostat ic Discharge - Machine Model
ESD MM
400
V
C
Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2222A
Document number: DS30041 Rev. 16 - 2
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MMBT2222A
Thermal Characteristics and Derating Information
025 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Tem perature (
oC)
M ax Pow er Dissipation (W )
100μ 1m 10m 100m 110 100 1k
0
50
100
150
200
250
300
350
400
Transient Therm al Im p edance
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
Therm al Resistance (oC/W)
Pulse Width (s)
10m 100m 110 100 1k
0.1
1
10 Single Pulse. T
A
=25
o
C
Pu lse Power Dissipation
Pulse Width (s)
M ax Pow er Dissipation (W )
100µ
MMBT2222A
Document number: DS30041 Rev. 16 - 2
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MMBT2222A
Electrical Characteristics (@TA = +25°C, unless otherwi se specifi ed.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CH ARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
75
V
IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
40 V I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
6.0 V I
E
= 100µA, I
C
= 0
Collector Cut-Off Current ICBO 10 nA
µA VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = +150°C
Collector Cut-Off Current
ICEX
10 nA
VCE = 60V, VEB(OFF) = 3.0V
Collector Cut-Off Current
ICEV
10
nA
VCE = 60V, VBE = ±0.25V
Emitter Cut-Off Current
IEBO
10
nA
VEB = 5.0V, IC = 0
Base Cut-Off Current IBL 20 nA VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTI CS (Note 10)
DC Current Gain hFE
35
50
75
100
40
50
35
300
IC = 100µA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V , TA = -55°C
I
C
= 150mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage VCE(SAT) 0.3
1.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(SAT) 0.6
1.2
2.0 V IC = 150mA, IB = 15mA
I
C
= 500mA, I
B
= 5 0mA
SM ALL SIGNAL CH ARACTERISTICS
Output Capacitance Cobo 8 pF VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance C
ibo
— 25 pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure NF 4.0 dB VCE = 10V, IC = 100µA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time tD 10 ns VCC = 3 0V, IC = 150mA,
VBE(OFF) = - 0.5V, IB1 = 1 5mA
Rise Time tR 25 ns VCC = 3.0V , IC = 150mA, IB1 = 15mA,
VBE(OFF) = 0.5V
Storage Time tS 225 ns VCC = 30V, IC = 150mA,
I
B1
= I
B2
= 15mA
Fall Time
tF
60
ns
VCC = 3 0V, IC = 150mA, IB1 = IB2 = 15mA
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT2222A
Document number: DS30041 Rev. 16 - 2
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MMBT2222A
1
10
100
1,000
110 100
I , COLLECTOR CURRENT (mA)
Figure 5 Typi c al Gain Bandwidt h Product
vs. Collector Current
C
f , GAIN BANDWIDTH PRODUCT (MHz)
T
V = 5V
CE
0.001 0.01 110
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Figure 6 Typi c al Collector Saturation Region
B
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I = 1mA
CI = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
C
A
P
A
C
I
T
A
N
C
E
(
p
F
)
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
18
20
f = 1MHz
C
obo
C
ibo
V , REVERSE VOLTAGE (V)
Figure 4 Typical Capacitance Characteri st ics
R
CAPACITANCE (pF)
1
0.1
10
100
V
,
B
A
S
E
-
E
M
I
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
I , COLLECTOR CURRE NT (mA)
Figure 3 Base-Emitter T urn-On Voltage
vs. Collect or Current
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1
10
100
1,000
V
,
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
C
E
(
S
A
T
)
I , COLLECTOR CURRE NT (mA)
Figure 2 Typical Collect or-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1
10
1,000
100
0.1
1
10
1,000
100
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
I , COLLECTOR CURRE NT (mA)
Figure 1 Typical DC Current Gain vs. Collect or Current
C
T = -25°C
A
T = 25°C
A
T = 125°C
A
V = 1.0V
CE
hFE, DC CURRENT GAIN
MMBT2222A
Document number: DS30041 Rev. 16 - 2
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© Diodes Incorporated
MMBT2222A
Package Ou t lin e Dim en sio ns
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
MMBT2222A
Document number: DS30041 Rev. 16 - 2
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MMBT2222A
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTIO N).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor t he rights of others. Any Customer or user of this document or products described herein in such applicati ons shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harml ess against all damages.
Diodes Incorporated does not warrant or accept any li ability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes I ncorporated products for any unintended or unauthorized application , Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirect l y, any claim of personal injury or death associated with such unintended or unauthori zed appl i cati on.
Products descri bed herein may be covered by one or more United Stat es, international or forei gn patents pending. Product nam es and m arkings
noted herein may also be covered by one or more United States, international or forei gn trademarks.
This document is written i n English but may be translated into multiple languages for reference. Only the English version of t his document is the
final and determinative f orm at released by Diodes I ncorporat ed.
LIFE SU PP O R T
Diodes Inc orporated products are specificall y not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Off icer of Diodes I ncorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in signifi cant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in t he safety and regulatory ramifications of their life support devic es or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-relat ed requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representati ves against any damages arisi ng out of the use of Diodes Incorporated products i n such safety -c ri tical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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