MMBT2222A 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data * * * * * * * * * Epitaxial Planar Die Construction Complementary PNP Type: MMBT2907A Ideal for Low Power Amplification and Switching Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) * * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) C SOT23 E B C B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product Status Compliance Marking MMBT2222A-7-F Active AEC-Q101 K1P 7 8 3,000 MMBT2222A-13-F Active AEC-Q101 K1P 13 8 10,000 MMBT2222AQ-7-F Active Automotive K1P 7 8 3,000 Notes: Reel Size (inches) Tape Width (mm) Quantity per Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 MMBT2222A Document number: DS30041 Rev. 16 - 2 2017 E Mar 3 Apr 4 K1P = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September) YM K1P 2018 F May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 2022 J Sep 9 2023 K Oct O Nov N 2024 L Dec D April 2016 (c) Diodes Incorporated MMBT2222A Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 600 mA Peak Collector Current ICM 800 mA Peak Base Current IBM 200 mA Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RJA Value 310 350 403 357 Unit mW C/W RJL 350 C/W TJ,TSTG -55 to +150 C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol Value Unit JEDEC Class ESD HBM ESD MM 4,000 400 V V 3A C 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT2222A Document number: DS30041 Rev. 16 - 2 2 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT2222A 0.4 400 350 o Thermal Resistance ( C/W) Max Power Dissipation (W) Thermal Characteristics and Derating Information 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 300 250 200 150 D=0.1 Single Pulse 100 D=0.2 50 0 100 100 1m D=0.05 10m 100m 1 10 100 1k Pulse Width (s) o Temperature ( C) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) D=0.5 10 Single Pulse. TA=25oC 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation MMBT2222A Document number: DS30041 Rev. 16 - 2 3 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT2222A Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Base Breakdown Voltage BVCBO 75 V IC = 100A, IE = 0 Collector-Emitter Breakdown Voltage (Note 10) BVCEO 40 V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 100A, IC = 0 Collector Cut-Off Current ICBO 10 nA A VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = +150C Collector Cut-Off Current ICEX 10 nA VCE = 60V, VEB(OFF) = 3.0V Collector Cut-Off Current ICEV 10 nA VCE = 60V, VBE = 0.25V Emitter Cut-Off Current IEBO 10 nA VEB = 5.0V, IC = 0 IBL 20 nA VCE = 60V, VEB(OFF) = 3.0V hFE 35 50 75 100 40 50 35 300 IC = 100A, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.6 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo -- 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF 4.0 dB VCE = 10V, IC = 100A, RS = 1.0k, f = 1.0kHz Delay Time tD 10 ns VCC = 30V, IC = 150mA, VBE(OFF) = - 0.5V, IB1 = 15mA Rise Time tR 25 ns VCC = 3.0V, IC = 150mA, IB1 = 15mA, VBE(OFF) = 0.5V Storage Time tS 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Fall Time tF 60 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Base Cut-Off Current Test Condition ON CHARACTERISTICS (Note 10) DC Current Gain SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Note: 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT2222A Document number: DS30041 Rev. 16 - 2 4 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT2222A 1,000 0.5 IC IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) R E T T I M E R O T C E L L O C , )T 0.4 )V ( E G A T 0.3 L O V N O IT 0.2 A R U AT SA (E S C 0.1 V hFE, DC CURRENT GAIN TA = 125C N IA G T 100 N E R R U C C D , E 10 F h TA = -25C TA = 25C TA = 25C TA = 150C TA = -50C VCE = 1.0V 0 1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Figure 1 Typical DC Current Gain vs. Collector Current 1,000 10 100 IC, COLLECTOR CURRENT (mA) Figure 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 0.1 )V ( E G A T L O V N O -N R U T R E T T I M E -E S A B , )N 35 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.0 f = 1MHz VCE = 5V 0.9 30 TA = -50C 0.7 25 ) F p ( E 20 C N A T I 15 C A P A C 10 CAPACITANCE (pF) 0.8 TA = 25C 0.6 0.5 TA = 150C Cibo 0.4 V 0 0.2 0.1 1 10 IC , COLLECTOR CURRENT (mA) Figure 3 Base-Emitter Turn-On Voltage vs. Collector Current 0 100 8 10 12 14 16 18 20 6 VR, REVERSE VOLTAGE (V) Figure 4 Typical Capacitance Characteristics 2 4 2.0 1,000 VCE = 5V VCE, COLLECTOR-EMITTER VOLTAGE (V) fT, GAIN BANDWIDTH PRODUCT (MHz) Cobo 5 0.3 O (E B 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 5 Typical Gain Bandwidth Product vs. Collector Current MMBT2222A Document number: DS30041 Rev. 16 - 2 100 5 of 7 www.diodes.com 1.8 IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 100 1 IB, BASE CURRENT (mA) Figure 6 Typical Collector Saturation Region 0.01 April 2016 (c) Diodes Incorporated MMBT2222A Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X MMBT2222A Document number: DS30041 Rev. 16 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT2222A IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2016, Diodes Incorporated www.diodes.com MMBT2222A Document number: DS30041 Rev. 16 - 2 7 of 7 www.diodes.com April 2016 (c) Diodes Incorporated