BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS
BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS
Power Darlingtons for Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
53 53A 53B 53C
54 54A 54B 54C
Collector-base voltage (open emitter) VCBO max. 45 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 100 V
Collector current ICmax. 8.0 A
Total power dissipation up to TC = 25°C Ptot max. 60 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 3 A; IB = 12 mA VCEsat max. 2.0 V
D.C. current gain
IC = 3 A; VCE = 3 V hFE min. 750
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
53 53A 53B 53C
54 54A 54B 54C
Collector-base voltage (open emitter) VCBO max. 45 60 80 100 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 100 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All diminsions in mm.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
123
4
TO-220 Plastic Package
Transys
Electronics
LI
M
ITE
D
Collector current ICmax. 8.0 A
Collector current (Peak value) ICM max. 12 A
Base current IBmax. 0.2 A
Total power dissipation upto TC=25°C Ptot max. 60 W
Derate above 25°C max. 0.48
W/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to case Rth j–c 2.08 °
C/W
From junction to ambient Rth j–a 7.0 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
53 53A 53B 53C
54 54A 54B 54C
Collector cutoff current
IB = 0; VCB = 45 V ICBO max. 0.2 mA
IB = 0; VCB = 60 V ICBO max. 0.2 mA
IB = 0; VCB = 80 V ICBO max. 0.2 mA
IB = 0; VCB = 100 V ICBO max. 0.2 mA
IB = 0; VCE = 22 V ICEO max. 0.5 mA
IB = 0; VCE = 30 V ICEO max. 0.5 mA
IB = 0; VCE = 40 V ICEO max. 0.5 mA
IB = 0; VCE = 50 V ICEO max. 0.5 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 2.0 mA
Breakdown voltages
IC = 100 mA; IB = 0 VCEO(sus)* min. 45 60 80 100 V
IC = 1 mA; IE = 0 VCBO min. 45 60 80 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 3 A; IB = 12 mA VCEsat* max. 2.0 V
VBEsat* max. 2.5 V
D.C. current gain
IC = 3 A; VCE = 3 V hFE* min. 750
Small signal current gain
IC = 3 A; VCE = 4 V; f = 1.0 MHz |hfe| min. 4.0
Output capacitance f = 1.0 MHz
IE = 0; VCB = 10 V NPN Comax. 300 pF
PNP Comax. 200 pF
Parallel-diode forward voltage
IF = 3 A VFmax. 2.5 V
IF = 8 A VFtyp. 2.5 V
* Pulse test: pulse width 300 µs; duty cycle 2%
BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C