Collector current ICmax. 8.0 A
Collector current (Peak value) ICM max. 12 A
Base current IBmax. 0.2 A
Total power dissipation upto TC=25°C Ptot max. 60 W
Derate above 25°C max. 0.48
W/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to case Rth j–c 2.08 °
C/W
From junction to ambient Rth j–a 7.0 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
53 53A 53B 53C
54 54A 54B 54C
Collector cutoff current
IB = 0; VCB = 45 V ICBO max. 0.2 – – – mA
IB = 0; VCB = 60 V ICBO max. – 0.2 – – mA
IB = 0; VCB = 80 V ICBO max. – – 0.2 – mA
IB = 0; VCB = 100 V ICBO max. – – – 0.2 mA
IB = 0; VCE = 22 V ICEO max. 0.5 – – – mA
IB = 0; VCE = 30 V ICEO max. – 0.5 – – mA
IB = 0; VCE = 40 V ICEO max. – – 0.5 – mA
IB = 0; VCE = 50 V ICEO max. – – – 0.5 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 2.0 mA
Breakdown voltages
IC = 100 mA; IB = 0 VCEO(sus)* min. 45 60 80 100 V
IC = 1 mA; IE = 0 VCBO min. 45 60 80 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 3 A; IB = 12 mA VCEsat* max. 2.0 V
VBEsat* max. 2.5 V
D.C. current gain
IC = 3 A; VCE = 3 V hFE* min. 750
Small signal current gain
IC = 3 A; VCE = 4 V; f = 1.0 MHz |hfe| min. 4.0
Output capacitance f = 1.0 MHz
IE = 0; VCB = 10 V NPN Comax. 300 pF
PNP Comax. 200 pF
Parallel-diode forward voltage
IF = 3 A VFmax. 2.5 V
IF = 8 A VFtyp. 2.5 V
* Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2%
BDX53, BDX53A, BDX53B, BDX53C
BDX54, BDX54A, BDX54B, BDX54C