BC107/ BC108/ BC109 Low Power Bipolar Transistors TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E 0.76 G - H 0.91 1.17 J 0.71 1.21 K 12.70 - F L 1.27 2.97 45 Dimensions : Millimetres Pin Configuration 1. Emitter. 2. Base. 3. Collector. Page 1 30/05/05 V1.0 BC107/ BC108/ BC109 Low Power Bipolar Transistors Absolute Maximum Ratings DESCRIPTION SYMBOL BC107 BC108 BC109 UNIT Collector-Emitter Voltage VCEO 45 25 25 V Collector-Base Voltage VCBO 50 30 30 V Emitter-Base Voltage VEBO 6.0 5.0 5.0 V Collector Current Continuous Power Dissipation at Ta = 25C IC 0.2 A PD 0.6 W Derate Above 25C 2.28 Power Dissipation at Tc = 25C PD Derate Above 25C Operating And Storage Junction Tj, Tstg mW/C 1.0 W 6.67 mW/C -65 to +200 C Temperature Range Thermal Resistance Junction to Case Rth (j-c) 175 C/W Electrical Characteristics (Ta = 25C Unless Otherwise Specified) Description Symbol Test Condition Collector-Emitter Voltage VCEO IC = 2mA, IB = 0 BC107 BC108/109 45 20 V V Emitter-Base Voltage VEBO IE = 10uA, IC = 0 BC107 BC108/109 6.0 5.0 V V Collector-Cut off Current ICBO VCB = 45V, IE = VCB = 25V, IE = Tamb = 125C VCB = 45V, IE = VCB = 25V, IE = 0 0 BC107 BC108/109 15 15 nA nA 0 0 BC107 BC108/109 4.0 4.0 uA uA Page 2 Minimum Maximum Unit 30/05/05 V1.0 BC107/ BC108/ BC109 Low Power Bipolar Transistors Description Symbol Test Condition DC Current hFE IC = 10uA, VCE = 5V B Group C Group 40 100 IC = 2mA, VCE = 5V BC107 BC108 BC109 A Group B Group C Group 110 110 200 110 200 420 Base Emitter Saturation Voltage Minimum Maximum Unit 450 800 800 220 450 800 VBE (Sat) IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA 0.83 1.05 V V Collector Emitter Saturation Voltage VCE (Sat) IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA 0.25 0.60 V V Base Emitter on Voltage VBE (on) IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V 0.70 0.77 V V Collector Knee Voltage VCE (K) IC = 10mA, IB = The Value for which IC = 11mA, at VCE = 1V 0.60 V Transition Frequency ft VCE = 5V, IC =10mA, f = 100MHz Noise Figure NF VCE = 5V, IC = 0.2mA Rg = 2kohms, F = 30Hz to 15 KHz F = 1kHz, B = 200Hz Output Capacitance Cobo VCB = 10V, f = 1MHz Small Signal Current Gain hFE ALL f = 1kHz IC = 2mA,VCE = 5V Input Impedance hie ALL f = 1kHz IC = 2mA,VCE = 5V Output Admittance hoe ALL f = 1kHz IC = 2mA,VCE = 5V Page 3 0.55 150 BC109 BC109 BC107/108 MHz 4.0 4.0 10 dB dB dB 4.5 pF BC107 BC108 BC109 125 125 240 500 900 900 A Group B Group C Group 125 240 450 260 500 900 A Group B Group C Group 1.6 3.2 6.0 4.5 8.5 15 K K K 30 60 110 umhos umhos umhos A Group B Group C Group 30/05/05 V1.0 BC107/ BC108/ BC109 Low Power Bipolar Transistors Specifications VCEO VCBO IC maximum maximum maximum (V) (V) (A) hFE minimum at IC = 2 (mA) Transition Noise Figure Frequency maximum minimum (dB) (MHz) Ptot at Package and Ta = 25C pin out (mW) Part Number (NPN) BC107 45 50 BC107A 125 0.2 25 BC107B 10 BC108 150 600 TO-18 BC108B BC108C 30 BC109 240 4 BC109B BC109C Page 4 30/05/05 V1.0 BC107/ BC108/ BC109 Low Power Bipolar Transistors Notes: International Sales Offices: AUSTRALIA - 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