SiBar Thyristor Surge Protectors SA and SC series thyristor products for overvoltage protection SiBar thyristor surge protectors provide transient voltage protection for telecommunications applications. Tyco Electronics SiBar(R) thyristor surge protectors are designed to protect sensitive telecommunications equipment from the hazards caused by lightning, power contact, and power induction. These devices have high surge capability to protect against transient faults and high off-state impedance, rendering them transparent during normal system operation. Benefits: * Effective protection for sensitive telecom electronics * Low leakage current * Low power dissipation * Fast, reliable operation * No wear-out mechanisms * Helps designers meet worldwide telecom standards * Reduced warranty and service costs Target Applications: SiBar thyristor surge protectors are designed specifically for telecommunications and computer telephony applications, including: * Modems * Fax machines * PBX systems * Phones * POS systems * Analog and digital linecards * xDSL modes and splitters * Other customer premise and network equipment requiring protection * Easy installation; tape and reel per EIA 481 standards Features: * Bidirectional transient voltage protection * High off-state impedance * Low on-state voltage * High surge capability * Glass-passivated junctions * Short-circuit failure mode * Surface-mount technology Fundamentals of SiBar Thyristor Surge Protection Devices SiBar thyristor surge protectors are bidirectional silicon devices that fold back in the presence of transient overvoltage faults. When the breakover voltage of a SiBar device is exceeded, the device switches from high to low impedance to protect sensitive downstream equipment from harmful voltage surges. The device remains latched in a low- impedance state until the current decreases below the hold current, at which point the device returns to its high-impedance state. equipment, and primary protectors. Proper selection of both devices can provide reliable and cost-effective resettable overvoltage and overcurrent protection. These devices help designers to meet worldwide telecommunications standards and to lower equipment-service and warranty costs. SiBar devices may be used in conjunction with PolySwitch(R) resettable fuses in telecommunications applications, including network equipment, customer premise Typical applications Problem/solution Industry standards and customer specifications require telecommunications equipment designers to protect against the harmful effects of power cross, power induction, and lightning surges. These hazards can travel through the network and local loop, resulting in equipment damage and loss of service. A SiBar thyristor surge protector, either by itself or properly coordinated with a PolySwitch overcurrent device, will assist in protecting against these faults, minimizing equipment damage and improving customer satisfaction. Network equipment SiBar devices have been designed to assist network equipment manufacturers meet the stringent requirements of Telcordia GR-1089, ITU-T Recommendations K.17, K.20, and K.45. Customer premise equipment (CPE) SiBar devices have been designed to assist customer premise equipment manufacturers meet the stringent requirements of FCC part 68, UL1459/UL1950 3rd Edition, UL497A, and ITU-T Recommendation K.21. Examples of network equipment include: Examples of customer premise equipment include: * Analog and digital linecards * Base stations * PBX systems * Meter monitoring systems * Key telephone systems * Multiplex/pairgain systems * Modems * Remote terminal units * Phone sets * Repeaters * POS equipment * Surge strips with communication ports Network equipment protected with SiBar and PolySwitch devices Customer premise equipment protected with SiBar and PolySwitch devices Ungrounded Grounded T T Grounded T Z Z Z Z CPE CPE Z R R Z R Symbol key: Z Linecard SiBar thyristor surge protector (transient voltage protector) PolySwitch resettable fuse (overcurrent protection device) Note: T-R SiBar thyristor is optional; refer to SiBar application notes (www.circuitprotection.com) SiBar thyristor surge protectors and PolySwitch resettable fuses are designed to work together to effectively protect telecommunications equipment from transient overcurrent and overvoltage faults defined by regional agency specifications. Specifications ITU-T K.20 ITU-T K.21 ITU-T K.45 FCC Part 68 UL 1459* UL 1950 Telcordia GR1089 Telcordia GR1089 Intrabuilding PolySwitch Resettable Fuse TR250, TS250, TSV250 TR250, TS250, TSV250 TR250, TS250, TSV250 TR600-150, TS600-170 TR600-150, TS600-170 TR600-150, TS600-170 TR600-160-RA, TS600-200-RA TR250, TS250, TSV250 SiBar Surge Protector TVB170SA, TVB200SA, TVB270SA TVB170SA, TVB200SA, TVB270SA TVB170SA, TVB200SA, TVB270SA TVB270SA TVB270SA TVB270SA TVB170SC, TVB200SC, TVB270SC TVB170SA, TVB200SA, TVB270SA * Superseded by UL 1950, 3rd Edition for new designs. Note: For more information on PolySwitch resettable fuses for overcurrent protection, please contact your local Raychem representative or visit our Web site (www.circuitprotection.com) Selection Guide Follow these steps to select the proper SiBar thyristor surge protectors for your application: 1. Define the operating parameters for 5. Verify that the circuit's ambient operating temperatures are within the SiBar device's operating temperature range. 2. Select a SiBar device with an off-state voltage rating (VDM) above the maximum operating voltage and a peak pulse current rating above the maximum fault current. the circuit: * Maximum ambient operating temperature 6. Verify that the SiBar device's dimensions fit the application's space considerations. 3. Verify that the minimum hold current of the device is above the maximum short-circuit current of the system. * Maximum system operating current * Maximum operating voltage (DC bias + peak ringing voltage) 7. Independently evaluate and test the suitability and performance of the SiBar device in the application. 4. Verify that the maximum breakover voltage of the device is below the system damage threshold. * Maximum fault current * System voltage damage threshold Electrical Characteristics (25 C, Unless Otherwise Specified) TVB270SC TVB200SC TVB170SC VDM max. (V) 270 200 170 VBO max. (V) 370 320 265 IH min. (mA) 175 175 175 VT max. (V) 5.0 5.0 5.0 C1 typ (pF) 50 50 50 ITSM min. (A) 60 60 60 FCC 5x320 s 100 100 100 Lightning Current Wave Forms Telcordia 10x560 s 10x160 s 10x1000 s 2x10 s 100 200 100 500 100 200 100 500 100 200 100 500 ITU 5x310 s 100 100 100 TVB270SA TVB200SA TVB170SA 270 200 170 370 320 265 175 175 175 5.0 5.0 5.0 20 20 20 22 22 22 90 90 90 70 70 70 100 100 100 50 50 50 - 90 90 90 Notes (1) (2) (3) (4) (5) (5) (5) (5) (5) (5) - Part number Notes: 1. VDM measured per UL497B pulse requirements; max. off-state leakage current (IDM) = 5 A. 2. Measured at a typical breakover current (IBO) = 230 mA. 3. C, measured at f = 1 MHz, 50-VDC bias, 1 VRMS 4. Peak on-state surge current (60 Hz, one cycle). 5. Refer to application notes (www.circuitprotection.com) for further details. Electrical Characteristics (25 C, Unless Otherwise Specified) Parameter Peak on-state surge current (60Hz, one cycle) Critical rate-of-rise of on-state current (max. 2 x 10-s waveform, ISC =120A) Critical rate-of-rise of off-state voltage (linear waveform, VD = Rated VBO, Ti = 25 C) Storage temperature Operating temperature Junction temperature Symbol Unit TVBxxxSA TVBxxxSC ITSM A 22 60 di/dt A/s 150 250 dv/dt V/s C C C 2000 -65 to 150 -40 to 125 175 2000 -65 to 150 -40 to 125 175 Voltage-Current Characteristics I The voltage-current (V-I) is useful in depicting the electrical characteristics of the SiBar thyristor surge protectors in relation to each other. IPP IT IH IBO IDM VT VDM V VBO Symbol VBO Parameter Breakdown voltage IBO IH IT VT VDM IDM Breakdown current Hold current On-state current On-state voltage Maximum off-state voltage Off-state current IPP Peak pulse current di/dt, dv/dt Critical rate of rise of on-state current and voltage Definition Maximum voltage across the device at breakdown measured under a specified voltage and current rate of rise. Instantaneous current flowing at the breakover voltage (VBO) Minimum current required to maintain the device in the on-state condition. Current through the device in the on-state condition. Voltage across the device in the on-state condition at a specified current (IT) Maximum DC voltage that can be applied to the device while maintaining it in the off-state condition. Maximum DC value of current that results from the application of the maximum off-state voltage. Rated peak pulse current of specified amplitude and waveshape. that may be applied without damage. Maximum current and voltage rate of rise the device can withstand without damage. Typical Electrical Characteristics vs. Temperature Off-state voltage vs. temperature Hold current vs. temperature 200% 180% 115% Percentage of IH at 25 C Percentage of VDM at 25 C 120% 110% 105% 100% 95% 90% 85% -50 160% 140% 120% 100% 80% 60% 40% -25 0 25 50 75 Temperature (C) 100 125 150 20% -50 -25 0 25 50 75 Temperature (C) 100 125 150 Typical Electrical Characteristics vs. Temperature (continued) Off-state current vs. temperature 100 110% 10 105% IDM (mA) Percentage of VBO at 25 C Breakover voltage vs. temperature 115% 100% 95% 90% -50 1 0.1 0.01 -25 0 25 50 75 Temperature (C) 100 125 0.001 -25 150 0 25 50 75 100 Temperature (C) 125 150 Product Dimensions S A SiBar SA and SC devices are offered in industrystandard "SMB" device packages for easy installation. D B C All devices are bidirectional and may be oriented in either direction during installation. A min. 4.06 0.160 Millimeters Inches B max. 4.57 0.180 min. 3.30 0.130 H Millimeters Inches min. 0.051 0.002 * D dimension is measured within dimension P. min. 0.15 0.006 min. 1.90 0.075 K max. 0.30 0.012 J H C max. 3.81 0.150 J max. 0.152 0.006 P K min. 0.76 0.030 max. 1.27 0.050 D* max. 2.41 0.095 P ref. 0.51 0.020 min. 1.96 0.077 max. 2.11 0.083 S min. 5.21 0.205 max. 5.59 0.220 Recommended Pad Layout The dimensions in the table below provide the recommended pad layout for each SiBar device. C Pad dimensions A 2.261 0.089 Millimeters Inches B 2.159 0.085 B C 2.743 0.108 A Part Marking System Three-digit date code Marking Device code Device code REBD RDBD RCBD Part number* TVB270SC TVB200SC TVB170SC REBB RDBB RCBB TVB270SA TVB200SA TVB170SA Ordering Information Product description TVBXXXSA TVBXXXSC Devices per reel* Standard box quantity Approximate box weight 2500 pieces 10,000 pieces 3.5 lb *Supplied in embossed tape and reel format per EIA 481-1 standards. WARNING! * Operation beyond maximum ratings or improper use may result in device damage. * These devices are intended for protection against occasional overvoltage fault conditions and should not be used when repeated fault conditions are anticipated. 308 Constitution Drive Menlo Park, CA 94025-1164 Tel (800) 227-7040 (650) 361-6900 Fax (650) 361-2508 www.circuitprotection.com PolySwitch and SiBar are registered trademarks of Tyco Electronics Corporation. All information, including illustrations, is believed to be reliable. Users, however, should independently evaluate the suitability of each product for their application. Tyco Electronics makes no warranties as to the accuracy or completeness of the information, and disclaims any liability regarding its use. Tyco electronics' only obligations are those in the Company's Standard Terms and Conditions of Sale for this product, and in no case will Tyco Electronics be liable for any incident, indirect, or consequential damages arising from the sale, resale, use, or misuse of the product. Specifications are subject to change without notice. In addition, Tyco Electronics reserves the right to make changes-without notification to Buyer-to materials or processing that do not affect compliance with any applicable specification. (c) 2001 Tyco Electronics Corporation RCP0023.0201.5000 Worldwide Headquarters