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FCA35N60 N-Channel SuperFET(R) MOSFET 600 V, 35 A, 98 m Features Description * 650V @ TJ = 150C SuperFET(R) MOSFET is Fairchild Semiconductor's first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. * Typ. RDS(on) = 79 m * Ultra Low Gate Charge (Typ. Qg = 139 nC ) * Low Effective Output Capacitance (Typ. Coss(eff.) = 340 pF ) * 100% Avalanche Tested Applications * Solar Inverter * AC-DC Power Supply D G G D S TO-3PN S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate-Soure voltage - Continuous (TC = 25oC) FCA35N60 600 Unit V 30 V 35 ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 35 A EAR Repetitive Avalanche Energy (Note 1) 31.25 mJ dv/dt Peak Diode Recovery dv/dt 20 V/ns - Continuous (TC = 100oC) - Pulsed (Note 1) 105 A (Note 2) 1455 mJ (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL A 22.2 - Derate Above 25oC 312.5 W 2.5 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCA35N60 RJC Thermal Resistance, Junction to Case, Max. 0.4 RJA Thermal Resistance, Junction to Ambient, Max. 42 (c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. C2 1 Unit o C/W www.fairchildsemi.com FCA35N60 -- N-Channel SuperFET(R) MOSFET May 2014 Part Number FCA35N60 Top Mark FCA35N60 Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage BVDSS / TJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 A, VGS = 0 V, TJ = 25oC 600 - - V ID = 250 A, VGS = 0 V, TJ = 150oC - 650 - V ID = 250 A, Referenced to 25oC - 0.6 - V/oC VGS = 0 V, ID = 16 A - 700 - V VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = 30 V, VDS = 0 V - - 100 A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 A 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 17.5 A - 0.079 0.098 gFS Forward Transconductance VDS = 40 V, ID = 17.5 A - 28.8 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 4990 6640 pF - 2380 3170 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 140 - Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 113 - pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 340 - pF Qg Total Gate Charge at 10V 139 181 nC Gate to Source Gate Charge VDS = 480 V, ID = 35 A, VGS = 10 V - Qgs - 31 - nC Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance (G-S) (Note 4) - 69 - nC f = 1 MHz - 1.4 - - 34 78 ns VDD = 300 V, ID = 35 A, VGS = 10 V, RG = 4.7 - 120 250 ns - 105 220 ns - 73 155 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 35 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 105 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 35 A - - 1.4 V trr Reverse Recovery Time - 614 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 35 A, dIF/dt = 100 A/s - 16.3 - C Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: IAS = 17.5 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3: ISD 35 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4: Essentially independent of operating temperature typical characteristics. (c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. C2 2 www.fairchildsemi.com FCA35N60 -- N-Channel SuperFET(R) MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 200 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 1 o 150 C 10 o -55 C o 25 C *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 0.3 0.1 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 10 1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 8 VGS, Gate-Source Voltage[V] 500 IS, Reverse Drain Current [A] 0.20 0.16 0.12 VGS = 10V VGS = 20V 0.08 100 o 150 C 10 *Note: TC = 25 C 0 25 50 75 ID, Drain Current [A] 100 1 0.2 125 Figure 5. Capacitance Characteristics 1.6 10 VGS, Gate-Source Voltage [V] 10000 Capacitances [pF] 2. 250s Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 50000 Ciss 1000 100 o 25 C *Notes: 1. VGS = 0V o 0.04 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.24 RDS(ON) [], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 100 VDS, Drain-Source Voltage [V] (c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. C2 Coss Crss 8 6 4 2 0 600 3 VDS = 100V VDS = 250V VDS = 400V *Note: ID = 35A 0 40 80 120 Qg, Total Gate Charge [nC] 160 www.fairchildsemi.com FCA35N60 -- N-Channel SuperFET(R) MOSFET Typical Performance Characteristics Figure 8. On-Resistance Variation vs. Temperature 1.15 3.0 1.10 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 0.85 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 17.5A 0.5 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 300 40 10s 100 ID, Drain Current [A] ID, Drain Current [A] 100s 1ms 10ms 10 DC Operation in This Area is Limited by R DS(on) 1 *Notes: 0.1 o 30 20 10 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve ZJC(t), Thermal Response [oC/W] ZJC(t), Thermal Response [oC/W] Thermal Response [ZJC] 0.6 0.5 0.1 0.2 0.1 PDM PDM 0.05 0.02 0.01 0.01 *Notes: Single pulse t1 t1 t2 t2 o 0.001 -5 10 1. ZJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) -4 10 -3 10 -2 10 -1 10 1 10 RectangularPulse Pulse Duration [sec] t1, Rectangular Duration [sec] t1, Rectangular Pulse Duration [sec] (c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. C2 4 www.fairchildsemi.com FCA35N60 -- N-Channel SuperFET(R) MOSFET Typical Performance Characteristics (Continued) FCA35N60 -- N-Channel SuperFET(R) MOSFET IG = const. Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Resistive Switching Test Circuit & Waveforms VGS Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. C2 5 www.fairchildsemi.com FCA35N60 -- N-Channel SuperFET(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. C2 6 www.fairchildsemi.com FCA35N60 -- N-Channel SuperFET(R) MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3PN-003 (c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 (c)2009 Fairchild Semiconductor Corporation FCA35N60 Rev. C2 8 www.fairchildsemi.com FCA35N60 -- N-Channel SuperFET(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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