BUH515
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■HIGH VOLTAGECAPABILITY
■U.L.RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734(N)).
APPLICATIONS:
■HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
■SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUH515 is manufacturedusing Multiepitaxial
Mesa technology for cost-effective high
performance and usesa Hollow Emitter structure
to enhanceswitching speeds.
The BUH series is designed for use in horizontal
deflectioncircuits in televisionsand monitors. INTERNAL SCHEMATIC DIAGRAM
November 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE= 0) 1500 V
VCEO Collector-Emitter Voltage (IB= 0) 700 V
VEBO Emitter-Base Voltage (IC=0) 10 V
I
CCollector Current 8 A
ICM Collector Peak Current (tp<5ms) 12 A
I
BBase Current 5 A
IBM Base Peak Current (tp<5ms) 8 A
P
tot Total Dissipation at Tc=25o
C50W
T
stg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
ISOWATT218
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THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE =0) V
CE = 1500 V
VCE = 1500 V Tj=125o
C0.2
2mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 100 µA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB=0)
I
C= 100 mA 700 V
VEBO Emitter-Base Voltage
(IC=0) I
E=10mA 10 V
V
CE(sat)∗Collector-Emitter
Saturation Voltage IC=5A I
B=1.25A 1.5 V
V
BE(sat)∗Base-Emitter
Saturation Voltage IC=5A I
B=1.25A 1.3 V
h
FE∗DC Current Gain IC=5A V
CE =5V
I
C=5A V
CE =5V T
j=100o
C6
412
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
VCC =400V I
C=5A
I
B1 =1.25A I
B2 = 2.5 A 2.7
190 3.9
280 µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC= 5 A f = 15625 Hz
IB1 =1.25A I
B2 =-1.5A
V
ceflyback =1050sin
π
5106
tV
2.3
350 µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC= 5A f = 31250 Hz
IB1 =1.25A I
B2 =-1.5A
V
ceflyback =1200sin
π
5106
tV
2.3
200 µs
ns
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area Thermal Impedance
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Derating Curve
Collector Emitter SaturationVoltage
PowerLosses at 16 KHz
DC Current Gain
BaseEmitter Saturation Voltage
Switching Time InductiveLoad at 16KHz
(see figure 2)
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PowerLosses at 32 KHz Switching Time InductiveLoad at 32 KHz
(see figure 2)
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at
100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of IB2 which
minimizes power losses, fall time tfand,
consequently,Tj. A new set of curves have been
defined to give total power losses, tsand tfas a
function of IB2 at both 16 KHz and 32 KHz
scanning frequencies for choosing the optimum
negative drive. The test circuit is illustrated in
figure 1.
Inductance L1serves to control the slope of the
negative base current IB2 to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenonin the collectorcurrent.
The values of L and C are calculated from the
followingequations:
1
2
L
(
I
C
)2=1
2
C
(
V
CEfly
)2ω=2π
f
=1
√
L
C
Where IC= operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
Reverse Biased SOA Switching Time Resistive Load
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Figure1: InductiveLoadSwitching TestCircuits.
Figure2: Switching Waveformsin a Deflection Circuit
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
P025C/A
ISOWATT218MECHANICAL DATA
- Weight: 4.9g (typ.)
- MaximumTorque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- Theside of the dissipator must beflat within 80 µm
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printedin Italy – All Rights Reserved
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