©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
2N4953
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 1.0 A
TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C
2N4953
NPN General Purpose Amplifier
• This device designed for use as general purpose amplifier and
switches requiring collector currents to 500mA.
• Sourced from Process 10.
TO-92
1. E mi tter 2. C o ll e ctor 3. B a se
1
©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
2N4953
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Charac teris tics TA=25°C unless otherwise noted
Symbol Parame ter Test Co ndition Min. Typ. Max. Units
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 30 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 .0 V
ICBO Collector Cut-off Current VCB = 40V, IE = 0 50 nA
IEBO Reverse Base Current VEB = 3.0V, IC = 0 50 nA
On Characteristics *
hFE DC Current Gain VCE = 10V, IC = 1.0mA
VCE = 10V, IC = 10mA
VCE = 10V, IC = 150mA
75
150
200 600
VCE(sat) Collector-Emitter Saturation Voltage IC = 150mA, IB = 15mA 0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15mA 1.3 V
VBE(on) Base-Emitter On V oltage VCE = 10V, IC = 150mA 1.2 V
Small Signal Characteristics
Cob Output Capacitance VCB = 10V, f = 1.0MHz 8.0 pF
hfe Small-Signal Current Gain IC = 20mA, VCE = 10V,
f = 100MHz 2.5
ton Tu rn-On Time VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA 40 ns
toff Tu rn -Off Time 400 ns
Symbol Parameter Max. Units
PDTotal Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
2N4953
Package Dimensions
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, July 2002
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
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ImpliedDisconnect
ISOPLANAR
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MICROWIRE
MSX
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FASTâ
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Rev. I
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