TLP521-1,TLP521-2,TLP521-4
1 2019-06-24
© 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP521-1, TLP521-2, TLP521-4
Programmable Controllers
AC/DC-Input Module
Solid State Relay
The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically
coupled to an infrared emitting diode.
The TLP521-2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP521-4 provides four isolated channels in a sixteen
plastic DIP package.
• Collector-emitter voltage: 55 V (min)
• Current transfer ratio: 50 % (min)
Rank GB: 100 % (min)
• Isolation voltage: 2500 Vrms (min)
• UL-recognized: UL 1577, File No.E67349
• cUL-recognized: CSA Component Acceptance Service No.5A
File No.E67349
TOSHIBA
11-5B2
Weight: 0.26 g (typ.)
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
TOSHIBA
11-20A3
Weight: 1.1 g (typ.)
Unit: mm
Start of commercial production
1979-05
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
Pin Configurations (top view)
TLP521-2
1
2
7
8
3
4
5
6
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
: Anode
: Cathode
: Emitter
: Collector
TLP521
-4
5
6
11
12
7
8
9
10
1
2
15
16
3
4
13
14
TLP521-1
1
2
3
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol
Rating
Unit
TLP521-1
TLP521-2
TLP521-4
LED
Forward current IF 70 50 mA
Forward current derating ΔIF/°C -0.93 (Ta ≥ 50°C) -0.5 (Ta ≥ 25°C) mA/°C
Pulse forward current
(100 μs pulse, 100 pps) IFP 1 A
Reverse voltage VR 5 V
Diode power dissipation
PD 150 100 mW
Diode power dissipation derating
Δ
PD/°C -2.0 (Ta ≥ 50°C) -1.0 (Ta ≥ 25°C) mW/°C
Junction temperature Tj 125 °C
Detector
Collector-emitter voltage VCEO 55 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 circuit) PC 100 mW
Collector power dissipation
derating (1 circuit) (Ta ≥ 25°C) ΔPC/°C -1.0 mW/°C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Operating temperature range Topr -55 to 100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation
(1 circuit)
PT 250 150 mW
Total package power dissipation
derating (1 circuit) (Ta ≥ 25°C) ΔPT/°C -2.5 -1.5 mW/°C
Isolation voltage
(AC, 60 s, R.H.≤ 60 %) (Note 1) BVS 2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
Current transfer ratio
Type
Classi-
fication
(Note 1)
Current Transfer Ratio (%)
(IC/IF)
Marking Of
Classification
IF = 5mA, VCE = 5V, Ta = 25°C
Min Max
TLP521-1
Blank 50 600 Blank, Y■, YE, G, G■, GR, B, BL, GB
Rank Y 50 150 YE, Y■
Rank GR 100 300 GR, G, G■
Rank BL 200 600 BL, B
Rank GB 100 600 GB, GR, G, G■, BL, B
Rank YH 75 150 Y■
Rank GRL 100 200 G
Rank GRH 150 300 G■
Rank BLL 200 600 B
TLP521-2
Blank 50 600 Blank, GR, BL, GB
Rank GB 100 600 GB, GR, BL
Rank GR 100 300 GR
Rank BL 200 600 BL
TLP521-4
Blank 50 600 Blank, GB
Rank GB 100 600 GB
Note 1: Ex. rank GB: TLP521-1 (GB)
Note: Application type name for certification test, please use standard product type name, i.e.
TLP521-1 (GB): TLP521-1, TLP521-2 (GB): TLP521-2
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1 MHz — 30 — pF
Detector
Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 55 — — V
Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 — — V
Collector dark current ICEO
VCE = 24 V — 10 100 nA
VCE = 24 V, Ta = 85 °C — 2 50 μA
Capacitance
(collector to emitter)
CCE V = 0 V, f = 1 MHz — 10 — pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Current transfer ratio IC/IF
IF = 5 mA, VCE = 5 V
Rank GB
50 — 600
%
100 — 600
Saturated CTR IC/IF(sat)
IF = 1 mA, VCE = 0.4 V
Rank GB
— 60 —
%
30 — —
Collector-emitter
saturation voltage VCE(sat)
IC = 2.4 mA, IF = 8 mA — — 0.4
V
IC = 0.2 mA, IF = 1 mA
Rank GB
— 0.2 —
— — 0.4
Isolation Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Capacitance
(input to output) CS VS = 0 V, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V, R.H.≤ 60 % 5×10
10
10
14
— Ω
Isolation voltage BVS AC, 60 s 2500 — — Vrms
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10 V
IC = 2 mA
RL = 100 Ω
— 2 —
μs
Fall time tf — 3 —
Turn-on time ton — 3 —
Turn-off time toff — 3 —
Turn-on time tON
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
— 2 —
μs
Storage time ts — 15 —
Turn-off time tOFF — 25 —
I
F
V
CE
V
CC
t
ON
4.5V
0.5V
t
OFF
t
S
VCC
V
CE
Fig.1 : SWITCHING TIME TEST CIRCUIT
I
F
R
L
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
Ambient temperature Ta (°C)
I
F
– Ta
Allowable forward current
IF (mA)
100
80
-20
0
60
40
20
100
80 60
20 40 0
TLP521-1
Ambient temperature Ta (°C)
I
F
– Ta
Allowable forward current
IF (mA)
TLP521-2
TLP521-4
100
80
-20
0
60
40
20
100
80 60
20 40
0
Ambient temperature Ta (°C)
P
C – Ta
Allowable collector
power
dissipation PC (mW)
240
160
-20
0
120
80
40
100
80 60
20 40 0
200
TLP521-1
I
FP – DR
Allowable pulse forward
current IFP (mA)
Duty cycle ratio D
R
3000
10-3
10
1000
500
30
100
50
300
10-1 10-2 100
Pulse width ≤ 100μs
Ta = 25°C
TLP521-1
P
C
– Ta
Allowable collector power
dissipation PC (mW)
120
80
-20
0
60
40
20
100
80 60
20 40 0
100
TLP521-2
TLP521-4
Ambient temperature Ta (°C)
I
FP
– D
R
Allowable pulse forward
current IFP (mA)
Duty cycle ratio D
R
3000
10-3
10
1000
500
30
100
50
300
10-1 10-2 100
Pulse width ≤ 100μs
Ta = 25°C
TLP521-2
TLP521-4
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
Forward voltage V
F
(V)
I
F – VF
Forward current I
F (mA)
100
50
0.4
0.3
5
0.5
30
3
1
10
0.1
0.6 0.8 1.0 1.2 1.4 1.6
Ta=25°C
Forward voltage temperature
coefficient ΔVF/ΔTa (mV/°C)
ΔVF/ΔTa – IF
Forward current IF (mA)
0.1
-2.0
-2.4
-2.8
-0.4
0.3
-1.6
-1.2
-0.8
1 3 10 30
I
FP
– V
FP
Pulse forward current I
FP (mA)
Pulse forward voltage VFP (V)
1000
500
0
3
50
5
300
30
10
100
1
0.4 0.8 1.2 1.6 2.0 2.4
Pulse width ≤10μs
Repetitive frequency =100Hz
Ta = 25°C
ICEO – Ta
Ambient temperature Ta (°C)
10
1
10
0
10
-1
160
120
80
40
0
10
-2
10
-3
10
-4
10V
5V
VCE=24V
Collector dark current I
CEO (μA)
Collector-emitter voltage V
CE
(V)
Collector current I
C (mA)
I
C – VCE
25
1.0 0.8 0.4 0.6 0.2
20
15
10
0
0
5
1.2 1.4
Ta=25°C
50mA
10mA
20mA
5mA
IF
=2mA
30mA
40mA
Collector-emitter voltage VCE (V)
Collector current I
C
(mA)
I
C – VCE
50mA
10mA
20mA
15mA
PC(MAX.)
I
F=5mA
30mA
80
10 8
4 6
0 2
60
40
20
0
Ta=25°C
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
Ambient temperature Ta (°C)
Collector current I
C (mA)
IC – Ta
80 60
20 40 0 -20
0.3
0.1
100
10
5
30
100
50
IF
= 0.5mA
3
1
0.5
1mA
5mA
10mA
25mA
VCE = 5V
I
C
/I
F
– I
F
Current transfer ratio
I
C
/I
F
(%)
Forward current I
F
(mA)
Ta = 25°C
VCE=5V
VCE=0.4V
500
300
50
30
1
0.3
10
5
100
10 30 100 3
Sample A
Sample B
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE(sat) (V)
V
CE(sat) – Ta
100 80 60
20 40 0 -20
0.20
0.16
0.12
0.08
0.04
0
I
F
= 5mA
IC = 1mA
I
C
– I
F
Collector current IC (mA)
Forward current I
F
(mA)
100
50
10
5
0.3
0.5
0.1
3
1
0.3 1 3 10 30 100
30
0.05
0.03
Ta = 25°C
VCE=5V
VCE=0.4V
Sample A
Sample B
Switching Time - R
L
Switching time (μs)
Load resistance R
L
(kΩ)
1000
500
300
100
50
30
10
5
3
1
3 10 30 100 300
1
Ta = 25°C
IF = 16mA
VCC= 5V
tON
t
OFF
tS
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP521-1,TLP521-2,TLP521-4
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Toshiba Electronic Devices & Storage Corporation
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.
Hardware, software and systems described in this document are collectively referred to as “Product”.
• TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.
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TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
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design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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