1N4148WS VISHAY Vishay Semiconductors Small Signal Fast Switching Diode Features * These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148. * Silicon Epitaxial Planar Diode * Fast switching diodes 17431 Mechanical Data Case: SOD-323 Plastic case Weight: approx. 5.0 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part 1N4148WS Ordering code Marking 1N4148WS-GS18 or 1N4148WS-GS08 Remarks A2 Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Reverse voltage Peak reverse voltage Symbol Value VR 75 V VRM 100 V mA Average rectified current half wave rectification with resistive load f 50 Hz IF(AV) 1501) Surge forward current t < 1 s and Tj = 25 C IFSM 350 Power dissipation 1) Ptot 200 1) Unit mA mW Valid provided that electrodes are kept at ambient temperature. Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit RthJA 6501) C/W Junction temperature Tj 150 C Storage temperature TS - 65 to + 150 C Thermal resistance junction to ambien air 1) Valid provided that electrodes are kept at ambient temperature. Document Number 85751 Rev. 1.3, 08-Jul-04 www.vishay.com 1 1N4148WS VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Forward voltage IF = 10 mA Leakage current Symbol Min Typ. Max VF Unit 1.0 V VR = 20 V 25 nA VR = 75 V 5.0 A VR = 20 V, TJ = 150 C 50 A Diode capacitance VF = VR = 0 V Ctot 4 pF Voltage rise when switching ON (tested with 50 mA pulses) tested with 50 mA pulses, tp = 0.1 s, rise time < 30 ns, fp = (5 to 100) kHz Vfr 2.5 ns Reverse recovery time IF = 10 mA, IR = 1 mA, VR = 6 V, RL = 100 trr 4 ns Rectification efficiency f = 100 MHz, VRF = 2 V 0.45 2 nF 5 k Rectification Efficiency Measurement Circuit 60 VRF = 2 V VO 17436 www.vishay.com 2 Document Number 85751 Rev. 1.3, 08-Jul-04 1N4148WS VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 17437 17439 Figure 1. Forward characteristics 17438 Figure 2. Dynamic Forward Resistance vs. Forward Current Document Number 85751 Rev. 1.3, 08-Jul-04 Figure 3. Admissible Power Dissipation vs. Ambient Temperature 17440 Figure 4. Relative Capacitance vs. Reverse Voltage www.vishay.com 3 1N4148WS VISHAY Vishay Semiconductors 17441 Figure 5. Leakage Current vs. Junction Temperature 17442 Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration www.vishay.com 4 Document Number 85751 Rev. 1.3, 08-Jul-04 1N4148WS VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 1.25 (0.049) max. 0.25 (0.010) min. 0.1 (0.004) max. 0.3 (0.012) 0.15 (0.006) max. Mounting Pad Layout 1.40 (0.055) 1.60 (0.062) 1.95 (0.076) 2.50 (0.098) 2.85 (0.112) Cathode Band ISO Method E 1.60 (0.062) 1.5 (0.059) 0.39 (0.015) 17443 1.1 (0.043) Document Number 85751 Rev. 1.3, 08-Jul-04 www.vishay.com 5 1N4148WS VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 85751 Rev. 1.3, 08-Jul-04