2N7002 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V ,0.115A , Rosionj=7.5Q2 @Vas=10V. D Rosonj=7.50 @Ves=5V. e High dense cell design for low Rosion). e Rugged and reliable. e SOT-23 package. SOT-23 ; D s 6 ff G S ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted) Lt] Parameter Symbol Limit Unit Drain-Source Voltage VDs 60 V Gate-Source Voltage Vas +20 V Drain Current-Continuous* @T.=125C 0 M15 mA Pulsed IDM 800 mA Drain-Source Diode Forward Current * Is 115 mA Maximum Power Dissipation PD 200 mW Operating Junction and Storage Tu, TsTG 55 to 150 C Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * RaJA 625 C/W 7-22N7002 ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVoss | Vas=0V, ID=10uA 60 V Zero Gate Voltage Drain Current loss Vos=60V, Ves=0V 1 | pA Gate-Body Leakage lass Ves =+20V, Vos=0V +100} nA ON CHARACTERISTICS? Gate Threshold Voltage Vest) | Vos=Ves, l= 250uA 1 25 | V Drain-Source On-State Resistance RDs(oN) Nes=10 1o=500mA 15 | 8 Vas =5V, In= 50mA 75 | Q On-State Drain Current ID(ON} Vps=7V, Ves= 10V 500 mA Forward Transconductance Ors Vs = 7V, Ip =200mA 80 mS DYNAMIC CHARACTERISTICS Input Capacitance Ciss 19 | 50 | PF Vps =25V, Ves = 0V Output Capacitance Coss t= OMHz 10 | 25 | PF Reverse Transfer Capacitance Crss 3.15 | PF SWITCHING CHARACTERISTICS: Tum-On Delay Time tD(ON) Vo = 30V, 23 | 30 | ns Rise Time tr a OV 15 | 20 | ns Turm-Off Delay Time 1D(OFF) Roen = 250 75 | 100 | ns Fall Time t 15 | 20 | ns 7-32N7002 ELECTRICAL CHARACTERISTICS (Ts=25 C unless otherwise noted) Parameter Symbol Condition Min | Typ | Max | Unit DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Vsp Ves = OV, Is = 115mA 0.76) 1.5) V Notes a.Surface Mounted on FR4 Board, t<10sec. b.Pulse Test:Pulse Width <300 ws, Duty Cycle < 2%, c.Guaranteed by design, not subject to production testing. Ip, Drain Current (A) C, Capacitance (pF) 2.5 Vas=10,9,8,7,6,5,4V 2.0 15 1.0 0.5 0 0 1 2 3 4 5 6 Vos, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 30 [ 25 Ciss 20 SS SSS SSS SSS SSS | 15 Coss 10 5 Crss 0 0 5 10 15 20 25 30 Vos, Drain-to Source Voltage (V) Figure 3. Capacitance Rpson), Normalized 7-4 Ip, Drain Current (A) Drain-Source, On-Resistance 2.0 I Vos=10V 1.6 1.2 ] 0.8 mee 25C 0.4 Y Uj 55T 0 0.0 10 20 30 40 50 60 Vas, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics 3.0 ; Vaes=10V 25 Tj=125C 2.0 15 a a nd 1.0 0.5 |______] ___ ja 55C 0 0 0.4 08 12 16 Ip, Drain Current(A) Figure 4. On-Resistance Variation with Drain Current and Temperature2N7002 Vth, Normalized @ 16 To g 1.20 w = ~ 3 14 ta 3S (1.45 = D=250 = 1D=250 vA re) Be 1.10 | a wX A = 10 PS ES 1.05 a 8 PN 2 @ 08 go 1.00 we 3 S gS $08 S 23 0965 g me OS 6 0.4 5 0.90 -0 -25 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150 Tj, Junction Temperature (C) Tj, Junction Temperature (C) Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation with Temperature with Temperature 40.0 as Q = 9 0.3 < Cc c s E 10.0 =] oO 2 : 8 0.15 5 2 / 8 5 F 8 e | Vps=7V 0 a 1.0 0 0.1 0.2 0.3 0.4 0.4 0.6 0.8 1.0 1.2 1.4 Ips, Drain-Source Current (A) Vsp, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage with Drain Current Variation with Source Current =< mn 7 5 = o Vps=25V fs 8 F pots, ' S ps = = = 8 6 o 3 f E 0.1 a =] 2 4 f, < 2 Y g GS Q 0.01 g 2 c Vaes=10V 3 = Single Pulse Ta=25 C 0 0.001 0 02 04 06 08 10 12 14 146 1 10 60 100 Qg, Total Gate Charge (nC) Vos, Drain-Source Voltage (V) Figure 9. Gate Charge Figure 10. Maximum Safe Operating Area2N7002 Vbpb RL td(on) | j++ VIN D VouT Ves VouT @) RGEN G Ss VIN 10% = PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms r(t), Normalized Effective Transient Thermal Impedance S a nd = bh a =] = 1. Roya (t)=r (t) * Rosa 2. Reva=See Datasheet 3. Tu-Ta = Pom* Reva (t) 4. Duty Cycle, D=ti/te 0.001 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 7-6