© Semiconductor Components Industries, LLC, 2013
July, 2018 − Rev. 6 1Publication Order Number:
MMBT2222ATT1/D
MMBT2222ATT1G,
NSVMMBT2222ATT1G
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCBO 75 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
TA = 25°CPD150 mW
Thermal Resistance,
Junction−to−Ambient RqJA 833 °C/W
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
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†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1P M G
G
1
MMBT2222ATT1G SOT−416
(Pb−Free) 3000 / Tape &
Reel
1P = Specific Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
CASE 463
SOT−416/SC−75
STYLE 1
3
2
1
NSVMMBT2222ATT1G SOT−416
(Pb−Free) 3000 / Tape &
Reel
MMBT2222ATT1G, NSVMMBT2222ATT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0) V(BR)CBO 75 − Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc) IBL − 20 nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc) ICEX − 10 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
HFE 35
50
75
100
40
−
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) −
−0.3
1.0
Vdc
Base−Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.6
−1.2
2.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hie 0.25 1.25 kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hre − 4.0 X 10−4
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hfe 75 375 −
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) hoe 25 200 mmhos
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) td− 10 ns
Rise Time tr− 25
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) ts− 225 ns
Fall Time tf− 60
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
MMBT2222ATT1G, NSVMMBT2222ATT1G
www.onsemi.com
3
Figure 1. Turn−On Time Figure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig, connectors, and oscilloscope.
+16 V
-2 V < 2 ns
0
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 kW
+30 V
200
CS* < 10 pF
+16 V
-14 V
0
< 20 ns
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
1 k
+30 V
200
CS* < 10 pF
-4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAINVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125°C
TJ = 25°C
25°C
-55°C
IC = 1.0 mA 10 mA 150 mA 500 mA
VCE = 1.0 V
VCE = 10 V
MMBT2222ATT1G, NSVMMBT2222ATT1G
www.onsemi.com
4
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0
300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t′s = ts - 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 50
0.2 0.5
0
100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
f = 1.0 kHz
IC = 50 mA
100 mA
500 mA
1.0 mA
4.0
6.0
8.0
10
2.0
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current−Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25°C
MMBT2222ATT1G, NSVMMBT2222ATT1G
www.onsemi.com
5
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
1
0.10.010.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
1.3
Figure 13. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
IC/IB = 10
150°C
−55°C
25°C0.4
0.6
0.9
1.2 IC/IB = 10
150°C
−55°C
25°C
0.4
0.8
1.0
VCE = 1 V
150°C
−55°C
25°C
Figure 14. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
-0.5
0
+0.5
COEFFICIENT (mV/ C)
-1.0
-1.5
-2.5
°
RqVC for VCE(sat)
RqVB for VBE
-2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 50
0
Figure 15. Safe Operating Area
VCE (Vdc)
1001010.10.01
0.001
0.01
0.1
1
10
IC (A)
Single Pulse Test
@ TA = 25°C
Thermal Limit
100 ms
1 s
10 ms
1 ms
MMBT2222ATT1G, NSVMMBT2222ATT1G
www.onsemi.com
6
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE G
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.061 0.063 0.065
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70 0.004 0.006 0.008
0.060 0.063 0.067
0.70 0.80 0.90 0.027 0.031 0.035
MMBT2222ATT1/D
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