Rev 2.0 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
ALD1108E/ALD1110E
BLOCK DIAGRAM
Operating Temperature Range*
0°C to +70°C0°C to +70°C -55°C to +125°C
8-Pin SOIC 8-Pin Plastic Dip 8-Pin CERDIP
Package Package Package
ALD1110ESAL ALD1110EPAL ALD1110EDA
16-Pin SOIC 16-Pin Plastic Dip 16-Pin CERDIP
Package Package Package
ALD1108ESCL ALD1108EPCL ALD1108EDC
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
* Contact factory for leaded (non-RoHS) or high temperature versions.
BLOCK DIAGRAM
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD™)
P
N1
(1) D
N1
(3)
G
N1
(2)
D
N2
(6) P
N2
(8)
G
N2
(7)
V- (4)
V+(5)
S
12
(4)
ALD1110E
EPAD 1 EPAD 2
~
~
EPAD 1 EPAD 2 EPAD 3 EPAD 4
P
N4
(8)
P
N
(1) D
N1
(3)
G
N1
(2)
D
N2
(14) P
N2
(16)
G
N2
(15)
P
N3
(9) D
N3
(11)
G
N3
(10)
D
N4
(6)
G
N4
(7)
V- (5)
V+(13)
S
12
(4) S
34
(12)
ALD1108E
~
~
GENERAL DESCRIPTION
ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically
Programmable Analog Device) N-channel MOSFETs with electrically
adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are
matched and adjusted (e-trimmed) at the factory resulting in quad/dual
MOSFETs that are highly matched in threshold voltages and other electrical
characteristics. For a given input voltage, the threshold voltage of a
MOSFET device determines its drain on-current, resulting in an on-
resistance characteristic that can be precisely preset and then controlled by
the input voltage very accurately.
Using an ALD1108E/ALD1110E is simple and straight forward. The
MOSFETs function as n-channel MOSFETs, except that all the devices
have exceptional matching to each other in electrical characteristics. Since
these devices are on the same monolithic chip, they also exhibit excellent
tempco matching characteristics.
These MOSFET devices have very low input currents, and as a result a very
high input impedance (>1012 Ohm). The gate voltage from a control source
can drive many MOSFET inputs with practically no loading effects. Used in
precision current mirror or current multiplier applications, they can be used
to provide a current source over a 100nA to 3mA range, and with either a
positive, negative or zero tempco.
e
EPAD
TM
®
N
A
B
L
E
D
E
ADVANCED
LINEAR
DEVICES, INC.
BENEFITS
•Precision matched electrically after
packaging
•Simple, elegant single-chip user option
to trim voltage/current values
•Excellent device matching characteristics
with or without additional electrical trim
•Remotely and electrically trim parameters
on circuits that are physically inaccessible
PIN CONFIGURATION
TOP VIEW
SCL, PCL, DC PACKAGES
TOP VIEW
SAL, PAL, DA PACKAGES
P
N2
1
2
36
7
8
45V+
G
N1
D
N1
P
N1
S
12
, V-
D
N2
G
N2
v+
ALD1110E
EPAD 1 EPAD 2
PN2
1
2
314
15
16
413 V+
512 S34
PN3
6
7
8
10
11
GN1
DN1
PN1
S12
V-
GN4
PN4
DN4
9
GN3
DN3
DN2
GN2
v-
v+
ALD1108E
EPAD 1 EPAD 2
EPAD 4 EPAD 3
ALD1108E/ALD1110E Advanced Linear Devices 2 of 14
FEATURES
• Electrically Programmable Analog Device
• Proven, non-volatile CMOS technology
• Operates from 2V, 3V, 5V to 10V
• Flexible basic circuit building block and design
element
• Very high resolution -- average e-trim voltage
resolution of 0.1mV
• Wide dynamic range -- current levels from 0.1µA
to 3000µA
• Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps
• Typical 10-year drift of less than 2mV
• Usable in voltage mode or current mode
• High input impedance -- 1012Ω
• Very high DC current gain -- greater than 109
• Device operating current has positive temperature
coefficient range and negative temperature
coefficient range with cross-over zero temperature
coefficient current level at 68µA
• Tight matching and tracking of on-resistance
between different devices with e-trim
• Very low input currents and leakage currents
• Low cost, monolithic technology
• Application-specific or in-system programming modes
• Opptional user software-controlled automation
• Opptional e-trim of any standard/custom configuration
• Micropower operation
• Available in standard PDIP, SOIC and hermetic CDIP
packages
• Suitable for matched-pair balanced circuit configuration
• Suitable for both coarse and fine trimming, as well as
matched MOSFET array applications
• RoHS compliant
APPLICATIONS
• Precision PC-based electronic calibration
• Automated voltage trimming or setting
• Remote voltage or current adjustment of
inaccessible nodes
• PCMCIA based instrumentation trimming
• Electrically adjusted resistive load
• Temperature compensated current sources and
current mirrors
• Electrically trimmed/calibrated current sources
• Permanent precision preset voltage level shifter
• Low temperature coefficient voltage and/or current
bias circuits
• Multiple preset voltage bias circuits
• Multiple channel resistor pull-up or pull-down circuits
• Microprocessor based process control systems
• Portable data acquisition systems
• Battery operated terminals and instruments
• Remote telemetry systems
• E-trimmable gain amplifiers
• Low level signal conditioning
• Sensor and transducer bias currents
• Neural networks
Optional EPAD Threshold Voltage Trimming by User
The basic EPAD MOSFET device is a monotonically
adjustable device, which means the device can normally
be e-trimmed to increase in threshold voltage and to
decrease in drain-on current as a function of a given input
bias voltage. Used as an in-circuit element for trimming or
setting a combination of voltage, current and/or on-
resistance characteristics, it can be set up to be e-trimmed
remotely and automatically. Once e-trimmed, the set
voltage and current levels are stored indefinitely inside the
device as a nonvolatile stored charge, which is not affected
during normal operation of the device, even when power is
turned off. A given EPAD device can be adjusted many
times to continually increase its threshold voltage. A pair
of EPAD devices can also be connected differentially such
that one device is used to adjust a parameter in one
direction and the other device is used to adjust the same
parameter in the other direction.
The ALD1108E/ALD1110E can be e-trimmed with an ALD
EPAD programmer to obtain the desired voltage and
current levels. They can also be e-trimmed as an active in-
system element in a user system, via user designed
interface circuitry. PN1, PN2, etc., are pins required for
optional e-trim of respective MOSFET devices. If unused,
these pins are to be connected to V- or ground. For more
information, see Application Note AN1108.
BENEFITS (cont.)
•Usable in environmentally sealed circuits
•No mechanical moving parts -- high G-shock
tolerance
•Improved reliability, dependability, dust and
moisture resistance
•Cost and labor savings
•Small footprint for high board density
applications
ALD1108E/ALD1110E Advanced Linear Devices 3 of 14
Supply voltage, V+ referenced to V- -0.3V to +10.6V
Supply voltage, VS referenced to V- ±5.3V
Differential input voltage range -0.3V to +0.3V
Power dissipation 600mW
Operating temperature range SAL, PAL, SCL, PCL packages 0°C to +70°C
DA, DC packages -55°C to +125°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage 1V+10.0 10.0 V
Initial Threshold Voltage 2Vti 0.990 1.000 1.010 0.990 1.000 1.010 V IDS = 1µA TA = 21°C
E-trim Vt Range Vt1.000 3.000 1.000 3.000 V
Drain - Gate Connected TCVDS -1.6 -1.6 mV/°CI
D
= 5µA
Voltage Tempco -0.3 -0.3 mV/°CI
D
= 50µA
0.0 0.0 mV/°CI
D
= 68µA
+2.7 +2.7 mV/°CI
D
= 500µA
Initial Offset Voltage 3VOSi 15 15mV
Tempco of VOS TCVOS 55µV/°CV
DS1 = VDS2
Differential Threshold Voltage 4DVt2.000 2.000 V
Tempco of Differential
Threshold Voltage 4TCDVt0.033 0.033 mV/°C
Long Term Drift ∆Vt /∆t -0.02 -0.05 -0.02 -0.05 mV 1000 Hours
Long Term Drift Match ∆Vt /∆t-5 -5µV 1000 Hours
Drain Source On Current IDS(ON) 3.0 3.0 mA VG =VD = 5V VS = 0V
Vt = 1.0
Drain Source On Current 4IDS(ON) 0.8 0.8 mA VG =VD = 5V VS = 0V
Vt = 3.0
Initial Zero Tempco Voltage 3VZTCi 1.52 1.52 V Vt = 1.000V
Zero Tempco Current IZTC 68 68 µA
Initial On-Resistance 3RONi 500 500 ΩVGS ¡= 5V VDS = 0.1V
On-Resistance Match ∆RON 0.5 0.5 %
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1108E ALD1110E Test
Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
NOTES:
1. Supply voltage is limited by Threshold Voltage. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source
terminals other than those labeled as V- can be at any voltage between V- and V+.
2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage
value.
3. Initial and Final values are the same unless deliberately changed by user.
4. These parameters apply only when Vt of one or more of the devices are to be changed by user.
ALD1108E/ALD1110E Advanced Linear Devices 4 of 14
E-TRIM CHARACTERISTICS
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1108E ALD1110E Test
Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
E-trim Vt Range 4Vt1.000 3.000 1.000 3.000 V
Resolution of Vt
E-trim Pulse Step 4RVt0.1 1 0.1 1 mV
Change in Vt Per ∆Vt / N 0.5 0.5 mV/ pulse Vt = 1.0V
E-trim Pulse 40.05 0.05 Vt = 2.5V
E-trim Pulse Voltage 4Vp 11.75 12.00 12.25 11.75 12.00 12.25 V
E-trim Pulse Current 4Ip 2 2 mA
Pulse Frequency 4ƒ pulse 50 50 KHZ
Transconductance gm 1.4 1.4 mA/V VD = 10V,VG =Vt + 4.0
Transconductance Match ∆gm 25 25 µA/V VD = 10V,VG =Vt + 4.0
Low Level Output
Conductance gOL 66µA/V VG = Vt +0.5V
High Level Output
Conductance gOH 68 68 µA/V VG = Vt +4.0V
Drain Off Leakage Current ID(OFF) 5 400 5 400 pA
44nAT
A
= 125°C
Gate Leakage Current IGSS 10 100 10 100 pA
11nAT
A
= 125°C
Input Capacitance CISS 25 25 pF
Cross Talk 60 60 dB f = 100KHz
Relaxation Time Constant 4tRLX 2 2 Hours
Relaxation Voltage 4VRLX -0.3 -0.3 % 1.0V ≤ Vt ≤ 3.0V
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
TA = 25°C V+ = +5.0V unless otherwise specified
ALD1108E ALD1110E Test
Parameter Symbol Min Typ Max Min Typ Max Unit Conditions
ALD1108E/ALD1110E Advanced Linear Devices 5 of 14
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS
DRAIN SOURCE ON VOLTAGE (V)
0246 10128
20
15
10
5
0
DRAIN SOURCE ON CURRENT
(mA)
T
A
= +25°C V
GS
= +12V
V
GS
= + 2V
V
GS
= + 4V
V
GS
= + 6V
V
GS
= + 8V
V
GS
= +10V
OUTPUT CHARACTERISTICS
-200 -160 -120 -80 -40 +200
+1.0
0
0 40 80 120 160
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT
(mA)
-1.0
V
GS
= +12V
V
GS
= +6V
V
GS
= +8V
V
GS
= +10V
T
A
= +25°C
TRANSCONDUCTANCE vs.
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0 0.5 1.0 1.5 2.0 3.0 3.52.5
2.0
1.5
1.0
5.0
TRANSCONDUCTANCE
( mA/V)
TA = +25°C
0
VGS = Vt + 4.0V
VDS = 10V
HIGH LEVEL OUTPUT CONDUCTANCE
vs.THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0 0.5 1.0 1.5 2.0 3.0 3.52.5
75
70
60
50
HIGH LEVEL OUTPUT
CONDUCTANCE (µA/V)
T
A
= +25°C
V
GS
= V
t
+ 4.0V
V
DS
= 5.0V
DRAIN SOURCE ON CURRENT vs.
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE (V)
0 0.5 1.0 1.5 2.0 3.0 3.52.5
T
A
= +25°C
V
DS
= +5.0V
DRAIN SOURCE ON CURRENT
(mA)
3.0
2.0
1.0
0
V
GS
= +5V
V
GS
= +1V
V
GS
= +2V
V
GS
= +3V
V
GS
= +4V
DRAIN SOURCE ON CURRENT vs.
AMBIENT TEMPERATURE
6
5
4
3
2
1
0
AMBIENT TEMPERATURE (°C)
-50 -25 0 25 50 75 100 125
DRAIN SOURCE ON CURRENT
(mA)
V
G
= 5V
V
t
= 1.0V
V
t
= 1.5V
V
t
= 3.0V
V
t
= 2.0V
V
t
= 2.5V
ALD1108E/ALD1110E Advanced Linear Devices 6 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
LOW LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
12
10
8
6
4
2
LOW LEVEL OUTPUT
CONDUCTANCE(µA/V)
AMBIENT TEMPERATURE (°C)
-50 -25 025 50 125
100
75
V
GS
= V
t
+ 0.5V
V
DS
= 5.0V
HIGH LEVEL OUTPUT CONDUCTANCE
vs. AMBIENT TEMPERATURE
100
80
70
HIGH LEVEL OUTPUT
CONDUCTANCE (mA/V)
-50 -25 0 25 50 12510075
AMBIENT TEMPERATURE (°C)
90
60
40
50
V
GS
= V
t
+ 4.0V
V
DS
= 5.0V
LOW LEVEL OUTPUT CONDUCTANCE
vs. THRESHOLD VOLTAGE
THRESHOLD VOTAGE (V)
10
5
0
LOW LEVEL CURRENT OUTPUT
CONDUCTANCE (µA/V)
0.5 1.0 1.5 2.0 3.0 3.52.50
T
A
= +25°C
V
GS
= V
t
+ 0.5V
V
DS
= 5.0V
TRANSCONDUCTANCE vs.
AMBIENT TEMPERATURE
TRANSCONDUCTANCE
(mA/V)
AMBIENT TEMPERATURE (°C)
-50 -25 025 50 12510075
2.5
2.0
1.5
1.0
0
0.5
THRESHOLD VOLTAGE vs.
AMBIENT TEMPERATURE
4.0
3.0
2.0
0
THRESHOLD VOTAGE
(V)
AMBIENT TEMPERATURE (°C)
-50 -25 0 25 50 125
10075
1.0
V
DS
= V
GS
I
D
= 1.0
µA
V
t
= 1.0V
V
t
= 1.5V
V
t
= 2.0V
V
t
= 2.5V
V
t
= 3.0V
DRAIN OFF LEAKAGE CURRENT I
DS
vs. AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
-50 -25 025 50 12510075
500
400
DRAIN OFF LEAKAGE CURRENT (pA)
300
200
600
100
0
I
DS
ALD1108E/ALD1110E Advanced Linear Devices 7 of 14
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
+10
+8
+6
+4
+2
-2
0
-10
CHANGE IN DIFFERENTIAL
THRESHOLDVOLTAGE (mV)
-50 -25 0 25 50 12510075
AMBIENT TEMPERATURE (°C)
-8
-6
-4
REPRESENTATIVE UNITS
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
DRAIN SOURCE ON CURRENT (µA)
5
4
3
2
1
0
GATE SOURCE VOLTAGE (V)
0.1 110010 1000 10000
V
DS
= 0.5V
T
A
= +125°C
V
DS
= 0.5V
T
A
= +25°CV
DS
= 5V
T
A
= +25°C
V
DS
= 5V
T
A
= +125°C
V
DS
I
DS(ON)
D
V
GS
S
V
DS
= R
ON
• I
DS(ON)
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
5
4
3
2
1
0
DRAIN SOURCE ON CURRENT
(mA)
543210
70°C
125°C
-25°C
0°C
-55°C
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
100
50
0
1.81.0 1.2 2.0
1.6
1.4
DRAIN SOURCE ON CURRENT
( µA)
Zero Temperature
Coefficient (ZTC)
{{
{
V
t
= 1.2V V
t
= 1.4V
V
t
= 1.0V
- 25°C- 25°C
- 25°C
ZTC
125°C125°C
ZTC
125°C
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
5
4
3
2
1
0
543210
T
A
= -55°C
T
A
= +50°C
DRAIN SOURCE ON CURRENT
(mA)
OUTPUT VOLTAGE
(V)
T
A
= 0°C
V
t
= 1.000V
VDS = VGS
T
A
= +125°C
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
ON - RESISTANCE (KΩ)
0.1 1.0 10010 1000 10000
DRAIN SOURCE ON CURRENT,
BIAS CURRENT (µA)
0.1
1.0
100
10
1000
10000 V
DS
= R
ON
• I
DS(ON)
V
GS
= +0.9V to +5.0V
V
DS
= 5.0V
V
DS
= 0.5V
V
DS
D
V
GS
S
I
DS(ON)
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
ALD1108E/ALD1110E Advanced Linear Devices 8 of 14
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
-50 -25 0 25 50 12510075
4
3
2
1
0
-1
-2
-3
-4
OFFSET VOLTAGE (mV)
REPRESENTATIVE UNITS
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
5.0
4.0
3.0
2.0
1.0
0.1 110010 1000 10000
+25°C
GATE SOURCE VOLTAGE (V)
ON - RESISTANCE (KΩ)
+125°C
V
DS
I
DS(ON)
D
V
GS
S
0.0V ≤ V
DS
≤ 5.0V
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
5
DRAIN- GATE DIODE CONNECTED
VOLTAGE TEMPCO (mV/ °C )
DRAIN SOURCE ON CURRENT (µA)
1 10 100 1000
-55°C ≤ T
A
≤ +125°C
0
-5
-2.5
2.5
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
GATE LEAKAGE CURRENT (pA)
-50 -25 025 50 12510075
500
400
300
200
600
100
0
AMBIENT TEMPERATURE (°C)
I
GSS
ALD1108E/ALD1110E Advanced Linear Devices 9 of 14
8 Pin Plastic SOIC Package
SOIC-8 PACKAGE DRAWING
Millimeters Inches
Min Max Min MaxDim
A
A
1
b
C
D-8
E
e
H
L
S
1.75
0.25
0.45
0.25
5.00
4.05
6.30
0.937
8°
0.50
0.053
0.004
0.014
0.007
0.185
0.140
0.224
0.024
0°
0.010
0.069
0.010
0.018
0.010
0.196
0.160
0.248
0.037
8°
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.35
0.18
4.69
3.50
5.70
0.60
0°
0.25
ø
L
C
H
S (45°)
ø
e
A
A
1
b
D
S (45°)
E
ALD1108E/ALD1110E Advanced Linear Devices 10 of 14
8 Pin Plastic DIP Package
PDIP-8 PACKAGE DRAWING
b
1
S
b
EE1
D
e
A2
A
1
A
L
ce
1
ø
Millimeters Inches
Min Max Min MaxDim
A
A
1
A
2
b
b
1
c
D-8
E
E
1
e
e
1
L
S-8
ø
3.81
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
0°
5.08
1.27
2.03
1.65
0.51
0.30
11.68
7.11
8.26
2.79
7.87
3.81
2.03
15°
0.105
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
0°
0.200
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
15°
ALD1108E/ALD1110E Advanced Linear Devices 11 of 14
8 Pin CERDIP Package
CERDIP-8 PACKAGE DRAWING
A
A
1
b
b
1
C
D-8
E
E
1
e
e
1
L
L
1
L
2
S
Ø
3.55
1.27
0.97
0.36
0.20
--
5.59
7.73
3.81
3.18
0.38
--
0°
5.08
2.16
1.65
0.58
0.38
10.29
7.87
8.26
5.08
--
1.78
2.49
15°
Millimeters Inches
Min Max Min MaxDim 0.140
0.050
0.038
0.014
0.008
--
0.220
0.290
0.150
0.125
0.015
--
0°
0.200
0.085
0.065
0.023
0.015
0.405
0.310
0.325
0.200
--
0.070
0.098
15°
2.54 BSC
7.62 BSC
0.100 BSC
0.300 BSC
EE
1
C
e
1
ø
s
b
L
D
b
1
e
A
L
2
A
1
L
1
ALD1108E/ALD1110E Advanced Linear Devices 12 of 14
16 Pin Plastic SOIC Package
E
D
e
A
A
1
b
S (45°)
L
C
H
S (45°)
ø
Millimeters Inches
Min Max Min MaxDim 1.75
0.25
0.45
0.25
10.00
4.05
6.30
0.937
8°
0.50
0.053
0.004
0.014
0.007
0.385
0.140
0.224
0.024
0°
0.010
0.069
0.010
0.018
0.010
0.394
0.160
0.248
0.037
8°
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.35
0.18
9.80
3.50
5.70
0.60
0°
0.25
A
A
1
b
C
D-16
E
e
H
L
S
ø
SOIC-16 PACKAGE DRAWING
ALD1108E/ALD1110E Advanced Linear Devices 13 of 14
16 Pin Plastic DIP Package
Millimeters Inches
Min Max Min MaxDim
A
A
1
A
2
b
b
1
c
D-16
E
E
1
e
e
1
L
S-16
ø
3.81
0.38
1.27
0.89
0.38
0.20
18.93
5.59
7.62
2.29
7.37
2.79
0.38
0°
5.08
1.27
2.03
1.65
0.51
0.30
21.33
7.11
8.26
2.79
7.87
3.81
1.52
15°
0.105
0.015
0.050
0.035
0.015
0.008
0.745
0.220
0.300
0.090
0.290
0.110
0.015
0°
0.200
0.050
0.080
0.065
0.020
0.012
0.840
0.280
0.325
0.110
0.310
0.150
0.060
15°
PDIP-16 PACKAGE DRAWING
b
1
D
S
be
A
2
A
1
A
L
EE1
ce
1
ø
ALD1108E/ALD1110E Advanced Linear Devices 14 of 14
EE1
C
e1ø
D
s
b1
e
b
L
A
L2
A1
L1
16 Pin CERDIP Package
CERDIP-16 PACKAGE DRAWING
A
A
1
b
b
1
C
D-16
E
E
1
e
e
1
L
L
1
L
2
S
Ø
3.55
1.27
0.97
0.36
0.20
--
5.59
7.73
3.81
3.18
0.38
--
0°
5.08
2.16
1.65
0.58
0.38
21.34
7.87
8.26
5.08
--
1.78
2.49
15°
Millimeters Inches
Min Max Min MaxDim 0.140
0.050
0.038
0.014
0.008
--
0.220
0.290
0.150
0.125
0.015
--
0°
0.200
0.085
0.065
0.023
0.015
0.840
0.310
0.325
0.200
--
0.070
0.098
15°
2.54 BSC
7.62 BSC
0.100 BSC
0.300 BSC
