ADVANCED LINEAR DEVICES, INC. TM e (R) EPAD D LE AB EN ALD1108E/ALD1110E QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPADTM) GENERAL DESCRIPTION BENEFITS ALD1108E/ALD1110E are monolithic quad/dual EPAD(R) (Electrically Programmable Analog Device) N-channel MOSFETs with electrically adjustable threshold (turn-on) voltage. The ALD1108E/ALD1110E are matched and adjusted (e-trimmed) at the factory resulting in quad/dual MOSFETs that are highly matched in threshold voltages and other electrical characteristics. For a given input voltage, the threshold voltage of a MOSFET device determines its drain on-current, resulting in an onresistance characteristic that can be precisely preset and then controlled by the input voltage very accurately. * Precision matched electrically after Using an ALD1108E/ALD1110E is simple and straight forward. The MOSFETs function as n-channel MOSFETs, except that all the devices have exceptional matching to each other in electrical characteristics. Since these devices are on the same monolithic chip, they also exhibit excellent tempco matching characteristics. These MOSFET devices have very low input currents, and as a result a very high input impedance (>1012 Ohm). The gate voltage from a control source can drive many MOSFET inputs with practically no loading effects. Used in precision current mirror or current multiplier applications, they can be used to provide a current source over a 100nA to 3mA range, and with either a positive, negative or zero tempco. packaging * Simple, elegant single-chip user option to trim voltage/current values * Excellent device matching characteristics with or without additional electrical trim * Remotely and electrically trim parameters on circuits that are physically inaccessible PIN CONFIGURATION ALD1110E PN1 1 EPAD 1 GN1 2 DN1 3 S12, V- 4 EPAD 2 8 PN2 7 GN2 6 DN2 5 V+ 16 PN2 v+ TOP VIEW SAL, PAL, DA PACKAGES ALD1108E ORDERING INFORMATION ("L" suffix denotes lead-free (RoHS)) Operating Temperature Range* 0C to +70C -55C to +125C 0C to +70C 8-Pin SOIC Package 8-Pin Plastic Dip Package PN1 1 EPAD 2 EPAD 1 GN1 2 15 GN2 DN1 3 14 DN2 8-Pin CERDIP Package S12 4 13 V+ V- 5 12 S34 DN4 6 11 DN3 GN4 7 10 GN3 PN4 8 9 PN3 ALD1110ESAL ALD1110EPAL ALD1110EDA 16-Pin SOIC Package 16-Pin Plastic Dip Package 16-Pin CERDIP Package ALD1108ESCL ALD1108EPCL ALD1108EDC v+ v- EPAD 4 EPAD 3 TOP VIEW SCL, PCL, DC PACKAGES * Contact factory for leaded (non-RoHS) or high temperature versions. BLOCK DIAGRAM BLOCK DIAGRAM ALD1110E ALD1108E V+(5) V+(13) PN (1) DN1 (3) DN2 (14) PN2 (16) PN3 (9) DN3 (11) DN4 (6) PN4 (8) PN1 (1) GN4 (7) GN2 (15) GN3(10) EPAD 2 EPAD 1 S12 (4) ~ V- (5) PN2 (8) ~ ~ GN1(2) DN2 (6) DN1 (3) EPAD 3 EPAD 4 S34 (12) GN2 (7) GN1(2) EPAD 1 ~ EPAD 2 S12 (4) V- (4) Rev 2.0 (c)2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com Optional EPAD Threshold Voltage Trimming by User BENEFITS (cont.) The basic EPAD MOSFET device is a monotonically adjustable device, which means the device can normally be e-trimmed to increase in threshold voltage and to decrease in drain-on current as a function of a given input bias voltage. Used as an in-circuit element for trimming or setting a combination of voltage, current and/or onresistance characteristics, it can be set up to be e-trimmed remotely and automatically. Once e-trimmed, the set voltage and current levels are stored indefinitely inside the device as a nonvolatile stored charge, which is not affected during normal operation of the device, even when power is turned off. A given EPAD device can be adjusted many times to continually increase its threshold voltage. A pair of EPAD devices can also be connected differentially such that one device is used to adjust a parameter in one direction and the other device is used to adjust the same parameter in the other direction. * Usable in environmentally sealed circuits * No mechanical moving parts -- high G-shock The ALD1108E/ALD1110E can be e-trimmed with an ALD EPAD programmer to obtain the desired voltage and current levels. They can also be e-trimmed as an active insystem element in a user system, via user designed interface circuitry. PN1, PN2, etc., are pins required for optional e-trim of respective MOSFET devices. If unused, these pins are to be connected to V- or ground. For more information, see Application Note AN1108. tolerance * Improved reliability, dependability, dust and moisture resistance * Cost and labor savings * Small footprint for high board density applications FEATURES * * * * * * * * * * * * APPLICATIONS * Precision PC-based electronic calibration * Automated voltage trimming or setting * Remote voltage or current adjustment of inaccessible nodes * PCMCIA based instrumentation trimming * Electrically adjusted resistive load * Temperature compensated current sources and current mirrors * Electrically trimmed/calibrated current sources * Permanent precision preset voltage level shifter * Low temperature coefficient voltage and/or current bias circuits * Multiple preset voltage bias circuits * Multiple channel resistor pull-up or pull-down circuits * Microprocessor based process control systems * Portable data acquisition systems * Battery operated terminals and instruments * Remote telemetry systems * E-trimmable gain amplifiers * Low level signal conditioning * Sensor and transducer bias currents * Neural networks ALD1108E/ALD1110E * * * * * * * * * * * Electrically Programmable Analog Device Proven, non-volatile CMOS technology Operates from 2V, 3V, 5V to 10V Flexible basic circuit building block and design element Very high resolution -- average e-trim voltage resolution of 0.1mV Wide dynamic range -- current levels from 0.1A to 3000A Voltage adjustment range from 1.000V to 3.000V in 0.1mV steps Typical 10-year drift of less than 2mV Usable in voltage mode or current mode High input impedance -- 1012 Very high DC current gain -- greater than 109 Device operating current has positive temperature coefficient range and negative temperature coefficient range with cross-over zero temperature coefficient current level at 68A Tight matching and tracking of on-resistance between different devices with e-trim Very low input currents and leakage currents Low cost, monolithic technology Application-specific or in-system programming modes Opptional user software-controlled automation Opptional e-trim of any standard/custom configuration Micropower operation Available in standard PDIP, SOIC and hermetic CDIP packages Suitable for matched-pair balanced circuit configuration Suitable for both coarse and fine trimming, as well as matched MOSFET array applications RoHS compliant Advanced Linear Devices 2 of 14 ABSOLUTE MAXIMUM RATINGS Supply voltage, V+ referenced to VSupply voltage, VS referenced to VDifferential input voltage range Power dissipation Operating temperature range SAL, PAL, SCL, PCL packages DA, DC packages Storage temperature range Lead temperature, 10 seconds CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. -0.3V to +10.6V 5.3V -0.3V to +0.3V 600mW 0C to +70C -55C to +125C -65C to +150C +260C OPERATING ELECTRICAL CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified ALD1108E Min Typ Parameter Symbol Supply Voltage 1 V+ Initial Threshold Voltage 2 Vt i 0.990 E-trim Vt Range Vt 1.000 Drain - Gate Connected Voltage Tempco TCVDS Initial Offset Voltage 3 VOS i 1 Tempco of VOS TCVOS 5 Differential Threshold Voltage 4 DV t Tempco of Differential Threshold Voltage 4 TCDV t 0.033 Long Term Drift V t /t -0.02 Long Term Drift Match V t /t -5 Drain Source On Current IDS(ON) Drain Source On Current 4 IDS(ON) Initial Zero Tempco Voltage 3 VZTC i Zero Tempco Current Max Min ALD1110E Typ 10.0 1.000 1.010 0.990 3.000 1.000 -1.6 -0.3 0.0 +2.7 1.000 Max 10.0 V 1.010 V 3.000 V -1.6 -0.3 0.0 +2.7 5 1 mV/C mV/C mV/C mV/C 5 2.000 0.033 -0.05 -0.02 Test Conditions IDS = 1A TA = 21C ID = 5A ID = 50A ID = 68A ID = 500A mV V/C 5 2.000 Unit VDS1 = VDS2 V mV/C -0.05 mV 1000 Hours -5 V 1000 Hours 3.0 3.0 mA VG =VD = 5V VS = 0V Vt = 1.0 0.8 0.8 mA VG =VD = 5V VS = 0V Vt = 3.0 1.52 1.52 V Vt = 1.000V IZTC 68 68 A Initial On-Resistance 3 RON i 500 500 On-Resistance Match RON 0.5 0.5 % VGS = 5V VDS = 0.1V NOTES: 1. Supply voltage is limited by Threshold Voltage. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source terminals other than those labeled as V- can be at any voltage between V- and V+. 2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage value. 3. Initial and Final values are the same unless deliberately changed by user. 4. These parameters apply only when Vt of one or more of the devices are to be changed by user. ALD1108E/ALD1110E Advanced Linear Devices 3 of 14 OPERATING ELECTRICAL CHARACTERISTICS (cont'd) TA = 25C V+ = +5.0V unless otherwise specified ALD1108E Min Typ Transconductance gm 1.4 1.4 mA/V VD = 10V,VG =Vt + 4.0 Transconductance Match gm 25 25 A/V VD = 10V,VG =Vt + 4.0 Low Level Output Conductance gOL 6 6 A/V VG = Vt +0.5V High Level Output Conductance gOH 68 68 A/V VG = Vt +4.0V Drain Off Leakage Current ID(OFF) 400 4 pA nA TA = 125C 100 1 pA nA TA = 125C Input Capacitance 5 10 IGSS CISS Cross Talk Relaxation Time Constant 4 tRLX Relaxation Voltage 4 VRLX Min 400 4 5 100 1 10 Max Unit Test Conditions Symbol Gate Leakage Current Max ALD1110E Typ Parameter 25 25 pF 60 60 dB 2 2 -0.3 -0.3 f = 100KHz Hours % 1.0V Vt 3.0V E-TRIM CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified Parameter Symbol E-trim Vt Range 4 Vt ALD1108E Min Typ 1.000 ALD1110E Typ Max Min 3.000 1.000 Max 3.000 Unit Test Conditions V Resolution of V t E-trim Pulse Step 4 RV t Change in Vt Per V t / N 0.1 Vp E-trim Pulse Current 4 Ip Pulse Frequency 4 pulse ALD1108E/ALD1110E 0.1 0.5 0.05 E-trim Pulse 4 E-trim Pulse Voltage 4 1 11.75 12.00 1 0.5 0.05 12.25 11.75 12.00 2 2 50 50 Advanced Linear Devices mV mV/ pulse 12.25 Vt = 1.0V Vt = 2.5V V mA KHZ 4 of 14 TYPICAL PERFORMANCE CHARACTERISITCS OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS +1.0 TA = +25C DRAIN SOURCE ON CURRENT (mA) DRAIN SOURCE ON CURRENT (mA) 20 VGS = +12V 15 VGS = +10V VGS = + 8V 10 VGS = + 6V 5 VGS = + 4V VGS = + 2V 0 TA = +25C VGS = +10V 0 VGS = +6V VGS = +8V -1.0 0 2 4 6 8 10 12 -200 -160 -120 -80 -40 DRAIN SOURCE ON VOLTAGE (V) 40 80 120 160 +200 DRAIN SOURCE ON CURRENT vs. THRESHOLD VOLTAGE 3.0 DRAIN SOURCE ON CURRENT (mA) 6 DRAIN SOURCE ON CURRENT (mA) 0 DRAIN SOURCE VOLTAGE (mV) DRAIN SOURCE ON CURRENT vs. AMBIENT TEMPERATURE VG = 5V 5 4 Vt = 1.0V 3 Vt = 1.5V Vt = 2.0V 2 Vt = 2.5V 1 Vt = 3.0V -50 -25 0 25 50 75 100 TA = +25C VDS = +5.0V VGS = +5V VGS = +4V 2.0 VGS = +3V 1.0 VGS = +2V VGS = +1V 0 0 0 125 0.5 1.0 1.5 2.0 2.5 3.0 3.5 AMBIENT TEMPERATURE (C) THRESHOLD VOLTAGE (V) TRANSCONDUCTANCE vs. THRESHOLD VOLTAGE HIGH LEVEL OUTPUT CONDUCTANCE vs.THRESHOLD VOLTAGE 2.0 75 HIGH LEVEL OUTPUT CONDUCTANCE (A/V) TA = +25C TRANSCONDUCTANCE ( mA/V) VGS = +12V 1.5 1.0 5.0 VGS = Vt + 4.0V VDS = 10V TA = +25C 70 60 VGS = Vt + 4.0V VDS = 5.0V 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 THRESHOLD VOLTAGE (V) ALD1108E/ALD1110E 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 THRESHOLD VOLTAGE (V) Advanced Linear Devices 5 of 14 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) LOW LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE 12 4.0 ID = 1.0A LOW LEVEL OUTPUT CONDUCTANCE(A/V) THRESHOLD VOTAGE (V) VDS = VGS Vt = 3.0V 3.0 Vt = 2.5V Vt = 2.0V 2.0 Vt = 1.5V 1.0 Vt = 1.0V 8 6 4 2 0 -25 0 25 50 75 100 -25 50 75 125 100 TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE DRAIN OFF LEAKAGE CURRENT IDS vs. AMBIENT TEMPERATURE 1.5 1.0 0.5 0 -25 0 25 50 75 100 600 500 400 300 IDS 200 100 0 -50 125 -25 HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE VGS = Vt + 4.0V VDS = 5.0V 80 70 60 50 40 -25 0 25 50 75 50 75 100 125 100 10 TA = +25C 5 VGS = Vt + 0.5V VDS = 5.0V 0 125 AMBIENT TEMPERATURE (C) ALD1108E/ALD1110E 25 LOW LEVEL OUTPUT CONDUCTANCE vs. THRESHOLD VOLTAGE LOW LEVEL CURRENT OUTPUT CONDUCTANCE (A/V) 100 90 0 AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) HIGH LEVEL OUTPUT CONDUCTANCE (mA/V) 25 AMBIENT TEMPERATURE (C) 2.0 -50 0 AMBIENT TEMPERATURE (C) 2.5 -50 -50 125 DRAIN OFF LEAKAGE CURRENT (pA) -50 TRANSCONDUCTANCE (mA/V) VGS = Vt + 0.5V VDS = 5.0V 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 THRESHOLD VOTAGE (V) Advanced Linear Devices 6 of 14 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 100 5 DRAIN SOURCE ON CURRENT ( A) DRAIN SOURCE ON CURRENT (mA) DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE -55C 4 -25C 3 0C 2 1 70C 0 0 1 2 3 125C 4 Zero Temperature Coefficient (ZTC) { { Vt = 1.0V { Vt = 1.2V - 25C Vt = 1.4V - 25C - 25C 0 1.0 5 1.4 1.2 1.8 1.6 2.0 GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. ON - RESISTANCE 10000 DRAIN SOURCE ON CURRENT, BIAS CURRENT (A) CHANGE IN DIFFERENTIAL THRESHOLDVOLTAGE (mV) 125C 50 CHANGE IN DIFFERENTIAL THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE REPRESENTATIVE UNITS +6 +4 +2 0 -2 -4 -6 -8 VDS = RON * IDS(ON) VGS = +0.9V to +5.0V 1000 VDS = 5.0V 100 D VDS 10 IDS(ON) VGS 1.0 S VDS = 0.5V 0.1 -10 -50 -25 0 50 75 100 10 100 1000 DRAIN SOURCE ON CURRENT vs. OUTPUT VOLTAGE VDS = 0.5V TA = +125C 3 VDS = 0.5V TA = +25C VDS = 5V TA = +25C 1 VDS = 5V VDS = RON * IDS(ON) TA = +125C 1 10 100 1000 DRAIN SOURCE ON CURRENT (mA) IDS(ON) 0 Vt = 1.000V VDS = VGS 4 TA = -55C 3 TA = 0C 2 TA = +50C 1 TA = +125C 0 10000 0 1 2 3 4 5 OUTPUT VOLTAGE (V) DRAIN SOURCE ON CURRENT (A) ALD1108E/ALD1110E 10000 5 VDS S 0.1 1.0 GATE SOURCE VOLTAGE vs. DRAIN SOURCE ON CURRENT VGS 2 0.1 125 ON - RESISTANCE (K) D 4 25 AMBIENT TEMPERATURE (C) 5 GATE SOURCE VOLTAGE (V) ZTC 125C 125C GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V) +10 +8 ZTC Advanced Linear Devices 7 of 14 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) OFFSET VOLTAGE vs. AMBIENT TEMPERATURE GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE OFFSET VOLTAGE (mV) 3 GATE LEAKAGE CURRENT (pA) 4 REPRESENTATIVE UNITS 2 1 0 -1 -2 -3 600 500 400 300 200 IGSS 100 -4 0 -50 -25 0 25 50 75 100 125 -50 AMBIENT TEMPERATURE (C) VGS DRAIN- GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/ C ) GATE SOURCE VOLTAGE (V) +125C VDS IDS(ON) S 0.0V VDS 5.0V 3.0 +25C 2.0 1.0 0.1 1 10 100 50 75 100 125 1000 5 -55C TA +125C 2.5 0 -2.5 -5 10000 1 10 100 1000 DRAIN SOURCE ON CURRENT (A) ON - RESISTANCE (K) ALD1108E/ALD1110E 25 DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT 5.0 4.0 0 AMBIENT TEMPERATURE (C) GATE SOURCE VOLTAGE vs. ON - RESISTANCE D -25 Advanced Linear Devices 8 of 14 SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Millimeters Dim S (45) D A Min 1.35 Max 1.75 Min 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-8 4.69 5.00 0.185 0.196 E 3.50 4.05 0.140 0.160 1.27 BSC e A A1 e Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 o 0 8 0 8 S 0.25 0.50 0.010 0.020 b S (45) H L ALD1108E/ALD1110E C o Advanced Linear Devices 9 of 14 PDIP-8 PACKAGE DRAWING 8 Pin Plastic DIP Package Millimeters E E1 D S A2 A1 e b A L Dim Min Max Min Max A 3.81 5.08 0.105 0.200 A1 0.38 1.27 0.015 0.050 A2 1.27 2.03 0.050 0.080 b 0.89 1.65 0.035 0.065 b1 0.38 0.51 0.015 0.020 c 0.20 0.30 0.008 0.012 D-8 9.40 11.68 0.370 0.460 E 5.59 7.11 0.220 0.280 E1 7.62 8.26 0.300 0.325 e 2.29 2.79 0.090 0.110 e1 7.37 7.87 0.290 0.310 L 2.79 3.81 0.110 0.150 S-8 1.02 2.03 0.040 0.080 0 15 0 15 o b1 Inches c e1 ALD1108E/ALD1110E o Advanced Linear Devices 10 of 14 CERDIP-8 PACKAGE DRAWING 8 Pin CERDIP Package E E1 Millimeters D A1 s A L L2 b b1 e L1 Min Inches Dim A 3.55 Max 5.08 Min 0.140 Max 0.200 A1 1.27 2.16 0.050 0.085 b 0.97 1.65 0.038 0.065 b1 0.36 0.58 0.014 0.023 C 0.20 0.38 0.008 0.015 D-8 -- 10.29 -- 0.405 E 5.59 7.87 0.220 0.310 E1 7.73 8.26 0.290 0.325 e 2.54 BSC 0.100 BSC e1 7.62 BSC 0.300 BSC L 3.81 5.08 0.150 0.200 L1 3.18 -- 0.125 -- L2 0.38 1.78 0.015 0.070 S -- 2.49 -- 0.098 O 0 15 0 15 C e1 ALD1108E/ALD1110E o Advanced Linear Devices 11 of 14 SOIC-16 PACKAGE DRAWING 16 Pin Plastic SOIC Package E Millimeters S (45) D Dim Min A 1.35 Max 1.75 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-16 9.80 10.00 0.385 0.394 E 3.50 4.05 0.140 0.160 A1 e Min 1.27 BSC e A Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 o 0 8 0 8 S 0.25 0.50 0.010 0.020 b S (45) H L ALD1108E/ALD1110E C o Advanced Linear Devices 12 of 14 PDIP-16 PACKAGE DRAWING 16 Pin Plastic DIP Package E E1 Millimeters Dim D S A2 A1 e b A L Inches A Min 3.81 Max 5.08 Min 0.105 Max 0.200 A1 0.38 1.27 0.015 0.050 A2 1.27 2.03 0.050 0.080 b 0.89 1.65 0.035 0.065 b1 0.38 0.51 0.015 0.020 c 0.20 0.30 0.008 0.012 D-16 18.93 21.33 0.745 0.840 E 5.59 7.11 0.220 0.280 E1 7.62 8.26 0.300 0.325 e 2.29 2.79 0.090 0.110 e1 L 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 S-16 0.38 1.52 0.015 0.060 o 0 15 0 15 b1 c e1 ALD1108E/ALD1110E o Advanced Linear Devices 13 of 14 CERDIP-16 PACKAGE DRAWING 16 Pin CERDIP Package Millimeters E E1 D A1 s A L L1 L2 b b1 e Inches Dim A Min 3.55 Max 5.08 Min 0.140 Max 0.200 A1 1.27 2.16 0.050 0.085 b 0.97 1.65 0.038 0.065 b1 0.36 0.58 0.014 0.023 C 0.20 0.38 0.008 0.015 D-16 -- 21.34 -- 0.840 E 5.59 7.87 0.220 0.310 E1 7.73 8.26 0.290 0.325 e 2.54 BSC 0.100 BSC e1 7.62 BSC 0.300 BSC L 3.81 5.08 0.150 0.200 L1 3.18 -- 0.125 -- L2 0.38 1.78 0.015 0.070 S -- 2.49 -- 0.098 O 0 15 0 15 C e1 ALD1108E/ALD1110E o Advanced Linear Devices 14 of 14