2N6344A-D - ON Semiconductor - Datasheet.Support

 Semiconductor Components Industries, LLC, 1999

February, 2000 – Rev. 1 1Publication Order Number:

2N6344A/D

2N6344A, 2N6348A,

2N6349A

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies; or

wherever full-wave silicon gate controlled solid-state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied anode voltage with positive or

negative gate triggering.

•Blocking Voltage to 800 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in all Four Quadrants

•For 400 Hz Operation, Consult Factory

•8 Ampere Devices Available as 2N6344 thru 2N6349

•Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit

*Peak Repetitive Off–State Voltage(1)

(Gate Open, TJ = –40 to +110°C,

Sine Wave 50 to 60 Hz, Gate Open)

2N6344A, 2N6348A

2N6349A

VDRM,

VRRM

600

800

Volts

*On–State RMS Current

(Full Cycle Sine W ave 50 to 60 Hz)

(TC = +80°C)

(TC = +95°C)

IT(RMS)

6.0

*Peak Non–repetitive Surge Current

(One Full Cycle, 60 Hz, TC = +80°C)

Preceded and followed by rated current

ITSM 100 A

Circuit Fusing Consideration (t = 8.3 ms) I2t 59 A2s

*Peak Gate Power (TC = +80°C,

Pulse Width = 2.0 µs) PGM 20 Watts

*Average Gate Power

(TC = +80°C, t = 8.3 ms) PG(AV) 0.5 Watt

*Peak Gate Current

(Pulse Width = 2.0 µs; TC = +80°C) IGM 2.0 A

*Peak Gate Voltage

(Pulse Width = 2.0 µs; TC = +80°C) VGM

10 Volts

*Operating Junction Temperature Range TJ–40 to

+125 °C

*Storage Temperature Range Tstg –40 to

+150 °C

*Indicates JEDEC Registered Data.

(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

TRIACS

12 AMPERES RMS

600 thru 800 VOLTS

Device Package Shipping

ORDERING INFORMATION

2N6344A TO220AB 500/Box

2N6348A TO220AB

2N6349A TO220AB

TO–220AB

CASE 221A

STYLE 4

123

PIN ASSIGNMENT

3 Gate

Main Terminal 1

Main Terminal 2

4Main Terminal 2

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500/Box

MT1

MT2

Preferred devices are recommended choices for future use

and best overall value.

2N6344A, 2N6348A, 2N6349A

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

*Thermal Resistance, Junction to Case RθJC 2.0 °C/W

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in either direction)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

*Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C

TJ = 110°C

IDRM,

IRRM —

——

—10

2.0 µA

ON CHARACTERISTICS

*Peak On-State Voltage

(ITM =

17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle

2%) VTM — 1.3 1.75 Volts

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

*MT2(+), G(+); MT2(–), G(–) TC = –40°C

*MT2(+), G(–); MT2(–), G(+) TC = –40°C

IGT

—

6.0

—

100

125

Gate Trigger Voltage (Continuous dc)

(VD = 12 Vdc, RL = 100 ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

*MT2(+), G(+); MT2(–), G(–) TC = –40°C

*MT2(+), G(–); MT2(–), G(+) TC = –40°C

VGT

—

0.9

1.1

1.4

—

2.0

2.5

2.0

2.5

3.0

Volts

Gate Non–Trigger Voltage

(VD = Rated VDRM, RL = 10 k ohms, TJ = 110°C)

*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(+)

VGD

0.2 — —

Volts

Holding Current

(VD = 12 Vdc, Gate Open) TC = 25°C

Initiating Current =

200 mA *TC = –40°C

IH—

—6.0

—40

*Turn-On Time

(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,

Rise T ime = 0.1 µs, Pulse Width = 2 µs)

tgt — 1.5 2.0 µs

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,

Gate Unenergized, TC = 80°C)

dv/dt(c) — 5.0 — V/µs

*Indicates JEDEC Registered Data.

2N6344A, 2N6348A, 2N6349A

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+ Current

+ Voltage

VTM

Symbol Parameter

VDRM Peak Repetitive Forward Off State Voltage

IDRM Peak Forward Blocking Current

VRRM Peak Repetitive Reverse Off State Voltage

IRRM Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 – VTM

VTM Maximum On State Voltage

IHHolding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(–) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(–) MT2

REF

MT1

(–) IGT

GATE

(–) MT2

REF

–

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

Quadrant III Quadrant IV

Quadrant II Quadrant I

Quadrant Definitions for a Triac

IGT – + IGT

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

2N6344A, 2N6348A, 2N6349A

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100

110

1412108.06.04.02.0

30°

IT(RMS), RMS ON-STATE CURRENT, (AMP)

120°180°

90°

α = CONDUCTION ANGLE

60°

T , CASE TEMPERATURE ( C)°

4.0

00IT(RMS), RMS ON-STATE CURRENT (AMP)

8.0

2.0 4.0 6.0 8.0 10 12 14

TJ = 110°C

α = CONDUCTION ANGLE

α = 30°

180°

120°

90°

P , AVERAGE POWER (WATTS)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

QUADRANTS

QUADRANT 4

–60 20–20 0 40 60 80 100 120 140

TJ, JUNCTION TEMPERATURE (°C)

0.4 –40

0.6

0.8

1.0

1.2

1.4

1.6

1.8 50

7.0

5.0 140120100806040200–20–40–60 TJ, JUNCTION TEMPERATURE (°C)

VD = 12 V

V , GATE TRIGGER VOLTAGE (VOLTS)

QUADRANT

I , GATE TRIGGER CURRENT (mA)

Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current

VD = 12 V

2N6344A, 2N6348A, 2N6349A

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TJ = 100°C

f = 60 Hz

1.0

02.0 3.0 5.0 7.0 10

NUMBER OF CYCLES

CYCLE

100

TJ = 100°C

0.5

0.7

1.0

0.1

25°C

vTM, MAXIMUM INSTANT ANEOUS ON-STATE VOLTAGE (VOLTS)

–40

0.80.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4

0.2

0.3

–60 –20 200 40 10080 140

TJ, JUNCTION TEMPERATURE (°C) 12060

MAIN TERMINAL #2

POSITIVE

2.0

7.0

5.0

3.0

5.0

7.0

2.0

100

70 GATE OPEN

MAIN TERMINAL #1

POSITIVE

STA

NEOU

ON-

STAT

E CU

(AM

)

ITSM I , HOLDING CURRENT (mA)

Surge is preceded and followed by rated current

, PEAK SURGE CURRENT (AMP)

Figure 5. On–State Characteristics

Figure 6. Typical Holding Current

Figure 7. Maximum Non–Repetitive

Surge Current

(t),

TRA

RMA

SISTA

NCE

(

RMA

)

Figure 8. Typical Thermal Response

2.0 k 10 k20 5.0 k1.0 k500200100505.02.01.00.50.2

ZθJC(t) = r(t) • RθJC

0.02

0.05

0.2

0.1

0.5

1.0

t,TIME (ms)

0.1

0.01

2N6344A, 2N6348A, 2N6349A

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PACKAGE DIMENSIONS

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

TO–220AB

CASE 221A–07

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.022 0.36 0.55

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

123

–T– SEATING

PLANE

2N6344A, 2N6348A, 2N6349A

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Notes

2N6344A, 2N6348A, 2N6349A

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2N6344A/D

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