SIEMENS BB 639C Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV/ VTR tuners 2 1 VPSOS176 Type Marking |Ordering Code |Pin Configuration Package BB 639C yellow S |Q62702-B695 |1=c |2=-a_ | SOD-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage Va 30 V Peak reverse voltage (Rt 2 5kQ) Vam 35 Forward current le 20 mA Operating temperature range Top - 55 ...4+ 125 a @ Storage temperature Tstg - 55...4+ 150 Thermal Resistance Junction - ambient | Bin JA | < 450 [Kw Semiconductor Group 415 01.97 SIEMENS BB 639C Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. ityp. |max. DC characteristics Reverse current Ip nA Va = 30 V, Ta = 25 C - - 10 Va = 30 V, Ta = 85 C - - 200 AC characteristics Diode capacitance Cr pF Va =1V, f= 1MHz 36 39 42 VR =2V, f= 1 MHz 27 30.2 33.2 Va = 25 V, f= 1 MHz 25 2.72 3.05 Vea = 28 V, f= 1 MHz 2.4 2.55 2.8 Capacitance ratio Cro! Cros - VR =2V, Va =25V, f= 1 MHz 9.5 11.1 - Capacitance ratio Cri/Crog Va=1V, Va =28V, f=1 MHz 13.5 15.3 - Capacitance matching ACy/Cy % Va=1...28V, f=1MHz - - 25 Series resistance fg Q Va =5 V, f= 470 MHz - 0.6 0.75 Series inductance ls - 2 - nH Semiconductor Group 416 01.97 SIEMENS BB 639C Diode capacitance C, = f (Vp) Temperature coefficient of the diode f= 1MHz capacitance 7; = f (Vp) f= 1MHz 40 107 pF G \ Tee 10 \ 103 NX 5 < 0 10 o 10 16 20 Vv 30 10 10 v r a Va Reverse current /p = f (Ta) Reverse current /p = f (Va) Vp = 28V T, = Parameter 103 pA 1 +30 -10 10 30 50 70 C 100 - th Semiconductor Group 417 01.97