G6K-2F-RF 12VDC - OMRON - Datasheet.Support

○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays

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Serial EEPROM series Standard EEPRO M

MicroWire BUS EEPROM (3-Wire)

BR93G66-3

General Description

BR93G66-3 is serial EEPROM of Serial 3-Line Interface Method.

They are dual organization (by 16bit or 8bit) and it is selected by the input of ORG PIN.

Features

■ 3-Line Communications of chip select, serial clock,

serial data input / output (the case where input and

output are shared)

■ Operations available at High Speed 3MHz clock

(4.5V to 5.5V)

■ High Speed Write available (Write Time 5ms Max）

■ Same package and pin configuration from 1Kbit to

16Kbit

■ 1.7V to 5.5V Single Power Source Operation

■ Address Auto Increment Function at Read

Operation

■ Prevention of Write Error

» Write Prohibition at Power On

» Write Prohibition by Command Code

» Prevention of Write Error at Low Voltage

■ Self-Timed Programming Cycle

■ Program Condition Display by READY / BUSY

■ Dual Organization: by 16 bit (X16) or 8 bit (X8)

■ Compact Package

SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8

TSSOP-B8J DIP-T8 VSON008X2030

■ More than 40 years data retention

■ More than 1 million Write Cycles

■ Initial Delivery State all addresses FFFFh (X16) or

FFh (X8)

Packages W(Typ) x D(Typ)x H(Max)

BR93G66-3

Capacity Bit Format Type Power Source

Voltage DIP-T8(1) SOP8 SOP-J8 SSOP-B8 TSSOP-B8 TSSOP-B8J MSOP8 VSON008

X2030

4Kbit 256×16 or 512×8 BR93G66-3 1.7V to 5.5V ● ●● ● ● ● ●●

(1) DIP-T8 is not halogen free package

SOP8

5.00mm x 6.20mm x 1.71mm

SOP- J8

4.90mm x 6.00mm x 1.65mm

V

SON008X2030

2.00mm x 3.00mm x 0.60mm

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

DIP-T8

9.30mm x 6.50mm x 7.10mm

TSSOP-B8J

3.00mm x 4.90mm x 1.10mm

MSOP8

2.90mm x 4.00mm x 0.90mm

SSOP-B8

3.00mm x 6.40mm x 1.35mm

Datashee

t

2/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Absolute Maximum Ratings

Parameter Symbol Rating Unit Remark

Supply Voltage Vcc -0.3 to +6.5 V

Permissible

Dissipation Pd

800 (DIP-T8)

mW

Derate by 8.0mW/°C when operating above Ta=25°C

450 (SOP8) Derate by 4.5mW/°C when operating above Ta=25°C

450 (SOP-J8) Derate by 4.5mW/°C when operating above Ta=25°C

300 (SSOP-B8) Derate by 3.0mW/°C when operating above Ta=25°C

330 (TSSOP-B8) Derate by 3.3mW/°C when operating above Ta=25°C

310 (TSSOP-B8J) Derate by 3.1mW/°C when operating above Ta=25°C

310 (MSOP8) Derate by 3.1mW/°C when operating above Ta=25°C

300 (VSON008X2030) Derate by 3.0mW/°C when operating above Ta=25°C

Storage

Temperature Tst g －65 to +150 ℃

Operating

Temperature Topr －40 to +85 ℃

Input Voltage/

Output Voltage ‐ -0.3 to Vcc+1.0 V

The Max value of Input Voltage/Output Voltage is not over 6.5V.

When the pulse width is 50ns or less, the Min value of Input

Voltage/Output Voltage is not under -0.8V.

Junction

Temperature Tjmax 150 ℃ Junction temperature at the storage condition

Memory Cell Characteristics (VCC=1.7 V to 5.5V)

Parameter

Limit

Unit Conditions

Min Typ Max

Write Cycles (1) 1,000,000 - - Times Ta=25℃

Data Retention (1) 40 - - Years Ta=25℃

○Initial data in all addresses are either FFFFh(X16) or FFh(X8) upon delivery.

(1) Not 100% TESTED

Recommended Operating Ratings

Parameter Symbol Limit Unit

Supply Voltage Vcc 1.7 to 5.5

V

Input Voltage VIN 0 to Vcc

3/36

Datasheet

BR93G66-3

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15.Jun.2016 REV.003

TSZ22111・15・001

DC Characteristics (Unless otherwise specified, Vcc=1.7V to 5.5V, Ta=-40℃ to +85℃)

Parameter Symbol

Limit

Unit Conditions

Min Typ Max

Input Low Voltage VIL -0.3(1) - 0.3Vcc V 1.7V≦Vcc≦5.5V

Input High Voltage VIH 0.7Vcc - Vcc+1.0 V 1.7V≦Vcc≦5.5V

Output Low Voltage 1 VOL1 0 - 0.4 V IOL=2.1mA, 2.7V≦Vc≦5.5V

Output Low Voltage 2 VOL2 0 - 0.2 V IOL=100μA

Output High Voltage 1 VOH1 2.4 - Vcc V IOH=-0.4mA, 2.7V≦Vcc≦5.5V

Output High Voltage 2 VOH2 Vcc-0.2 - Vcc V IOH=-100μA

Input Leakage Current1 ILI1 -1 - +1 µA VIN=0V to Vcc(CS,SK,DI)

Input Leakage Current2 ILI2 -1 - +3 µA VIN=0V to Vcc(ORG)

Output Leakage Current ILO -1 - +1 µA VOUT=0V to Vcc, CS=0V

Supply Current

ICC1

- - 1.0 mA

Vcc=1.7V, fSK=1MHz, tE/W=5ms

(WRITE)

- - 2.0 mA

Vcc=5.5V ,fSK=3MHz, tE/W=5ms

(WRITE)

ICC2

- - 0.5 mA fSK=1MHz (READ)

- - 1.0 mA fSK=3MHz (READ)

ICC3

- - 2.0 mA

Vcc=2.5V, fSK=1MHz

tE/W=5ms (WRAL, ERAL)

- - 3.0 mA

Vcc=5.5V ,fSK=3MHz

tE/W=5ms (WRAL, ERAL)

Standby Current

ISB1 - - 2.0 µA CS=0V, ORG=Vcc or OPEN

ISB2 - - 15 µA CS=0V, ORG=0V

(1) When the pulse width is 50ns or less, the Min value of VIL is admissible to -0.8V.

4/36

Datasheet

BR93G66-3

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15.Jun.2016 REV.003

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AC Characteristics (Unless otherwise specified, Vcc=1.7V to 2.5V, Ta=-40℃ to +85℃)

Parameter Symbol

Limit Unit

Min Typ Max

SK Frequency fSK - - 1 MHz

SK High Time tSKH 250 - - ns

SK Low Time tSKL 250 - - ns

CS Low Time tCS 250 - - ns

CS Setup Time tCSS 200 - - ns

DI Setup Time tDIS 100 - - ns

CS Hold Time tCSH 0 - - ns

DI Hold Time tDIH 100 - - ns

Data “1” Output Delay tPD1 - - 400 ns

Data “0” Output Delay tPD0 - - 400 ns

Time from CS to Output Establishment tSV - - 400 ns

Time from CS to High-Z tDF - - 200 ns

Write Cycle Time tE/W - - 5 ms

(Unless otherwise specified, Vcc=2.5V to 4.5V, Ta=-40℃ to +85℃)

Parameter Symbol

Limit Unit

Min Typ Max

SK Frequency fSK - - 2 MHz

SK High Time tSKH 230 - - ns

SK Low Time tSKL 200 - - ns

CS Low Time tCS 200 - - ns

CS Setup Time tCSS 50 - - ns

DI Setup Time tDIS 100 - - ns

CS Hold Time tCSH 0 - - ns

DI Hold Time tDIH 100 - - ns

Data “1” Output Delay tPD1 - - 200 ns

Data “0” Output Delay tPD0 - - 200 ns

Time from CS to Output Establishment tSV - - 150 ns

Time from CS to High-Z tDF - - 100 ns

Write Cycle Time tE/W - - 5 ms

(Unless otherwise specified, Vcc=4.5V to 5.5V, Ta=-40℃ to +85℃)

Parameter Symbol

Limit Unit

Min Typ Max

SK Frequency fSK - - 3 MHz

SK High Time tSKH 100 - - ns

SK Low Time tSKL 100 - - ns

CS Low Time tCS 200 - - ns

CS Setup Time tCSS 50 - - ns

DI Setup Time tDIS 50 - - ns

CS Hold Time tCSH 0 - - ns

DI Hold Time tDIH 50 - - ns

Data “1” Output Delay tPD1 - - 200 ns

Data “0” Output Delay tPD0 - - 200 ns

Time from CS to Output Establishment tSV - - 150 ns

Time from CS to High-Z tDF - - 100 ns

Write Cycle Time tE/W - - 5 ms

5/36

Datasheet

BR93G66-3

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15.Jun.2016 REV.003

TSZ22111・15・001

Serial Input / Output Timing

1. Data is taken by DI sync with the rise of SK.

2. At read operation, data is output from DO in sync with the rise of SK.

3. The STATUS signal at write (READY / BUSY) is output after tCS from the fall of CS after write command input, at the area

DO where CS is high, and valid until the next command start bit is input. And, while CS is low, DO becomes High-Z.

4. After completion of each mode execution, set CS low once for internal circuit reset, and execute the following operation

mode.

5. 1/fSK is the SK clock cycle, even if fSK is maximum, the SK clock cycle can’t be tSKH(Min)+tSKL(Min)

6. For “Write cycle time tE/W”, please see Figure 36,37,39,40.

7. For “CS low time tCS”, please see Figure 36,37,39,40.

Block Diagram

Figure 1. Serial Input / Output Timing

CS

SK

DO (R EA D)

DI

DO(WRITE

)

tCS S tSKH tSKL

tCSH

tDIS t

D I H

tPD1

t

PD0

t DF

S TATUS VALI D

tSV

1/fSK

Command Decode

Control

Clock Generation

Power Source Voltage

Write

Prohibition

High Voltage Occurrence

Command

Re

g

iste

r

Address

Buffer

SK

DI

Dummy Bit

DO

Data

Register

R/W

Amplifier

8bit

16bit/8bit 16bit/8bit

4,096 bit

EEPROM

CS

Address

Decoder

9bit

or or 9bit

ORG

Figure 2. Block Diagram

6/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Pin Configuration

(TOP VIEW)

Pin Description

Figure 3. Pin Configuration

Pin Name I / O Description

CS Input Chip select input

SK Input

Serial clock input

DI Input Start bit, ope code, address, and serial data input

DO Output

Serial data output, READY / BUSY

―――――

STATUS display output

GND - All input / output reference voltage, 0V

ORG Input Organization select, X16mode or X8 mode(1)

DU - Don’t use terminal (2)

VCC - Supply voltage

(1) The memory array organization may be divided into either X8 or X16 which is selected by pin ORG.

When ORG is OPEN or connected to VCC, X16 organization is selected.

When ORG is connected to ground, X8 organization is selected.

(2) Terminals not used may be set to any of high, low, and OPEN

VCC DU ORG GND

CS SK DI DO

BR93G66-3 :DIP-T8

BR93G66F-3 :SOP8

BR93G66FJ-3 :SOP-J8

BR93G66FV-3 :SSOP-B8

BR93G66FVT-3 :TSSOP-B8

BR93G66FVJ-3 :TSSOP-B8J

BR93G66FVM-3 :MSOP8

BR93G66NUX-3 :VSON008X2030

7/36

Datasheet

BR93G66-3

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15.Jun.2016 REV.003

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Typical Performance Curves

Figure 4. Input High Voltage vs Supply Voltage

(CS,SK,DI,ORG) Figure 5. Input Low Voltage vs Supply Voltage

(CS,SK,DI,ORG)

Figure 6. Output Low Voltage1 vs Output Low Current

(VCC=2.7V)

Figure 7. Output Low Voltage2 vs Output Low Current

(VCC=1.7V)

0

1

2

3

4

5

6

0123456

SUPPLY VOLTAGE: Vcc(V)

INPUT HIGH VOLTAGE : V

IH

(V)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

1

2

3

4

5

6

0123456

SUPPLY VOLTAGE: Vcc(V)

INPUT LOW VOLTAGE : V

IL

(V)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

0.2

0.4

0.6

0.8

1

012345

OUTPUT LOW CURRENT:I

OL

(mA)

OUTPUT LOW VOLTAGE1 : V

OL1

(V)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

0.2

0.4

0.6

0.8

1

012345

OUTPUT LOW CURRENT : I

OL

(mA)

OUTPUT LOW VOLTAGE2 : V

OL2

(V)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

8/36

Datasheet

BR93G66-3

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15.Jun.2016 REV.003

TSZ22111・15・001

Typical Performance Curves‐Continued

Figure 8. Output High Voltage1 vs Output High Current

(VCC=2.7V)

Figure 9. Output High Voltage2 vs Output High Current

(VCC=1.7V)

0

0.2

0.4

0.6

0.8

1

1.2

0123456

SUPPLY VOLTAGE: Vcc(V)

INPUT LEAKAGE CURRENT1 : I

LI1

(uA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

1

2

3

4

5

0123456

SUPPL Y VOL TAGE: Vcc(V)

INPUT LEAKAGE CURRENT2 : I

LI2(uA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

Figure 10. Input Leakage Current1 vs Supply Voltage

(CS,SK,DI)

Figure 11. Input Leakage Curren2t vs Supply Voltage

(ORG)

0

1

2

3

4

5

0 0.4 0.8 1.2 1.6

OUTPUT HIGH CURRENT: I

OH

(mA)

OUTPUT HIGH VOLTAGE1 : V

OH1

(V)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

1

2

3

4

0 0.4 0.8 1.2 1.6

OUTPUT HIGH CURRENT: I

OH

(mA)

OUTPUT HIGH VOLTAGE2 : V

OH2

(V)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

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Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Typical Performance Curves‐Continued

0

0.2

0.4

0.6

0.8

1

1.2

0123456

SUPPL Y VOL TAGE: Vcc(V)

OUTPUT LEAKAGE CURRENT : I

LO

(uA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

1

2

3

4

5

0123456

SUPPL Y VOL TAGE: Vcc(V)

SUPPLY CURRENT (WRITE): I

CC1

(mA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

0.5

1

1.5

2

2.5

0123456

SU PPL Y VOLTAGE: Vcc(V)

SUPPLY CURRENT (READ): I

CC2

(mA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

Figure 12. Output Leakage Current (DO)

vs Supply Voltage

Figure 13. Supply Current (WRITE) vs Supply Voltage

( fSK=1MHz)

Figure 14. Supply Current (WRITE) vs Supply Voltage

(fSK=3MHz)

Figure 15. Supply Current (READ) vs Supply Voltage

(fSK=1MHz)

0

0.5

1

1.5

2

2.5

0123456

SUPPL Y VOL TAGE: Vcc(V)

SUPPLY CURRENT (WRITE): I

CC1

(mA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

10/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Typical Performance Curves‐Continued

0

0.5

1

1.5

2

2.5

0123456

SU PPLY VOL TAGE: Vcc(V)

SUPPLY CURRENT (READ): I

CC2

(mA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

1

2

3

4

5

0123456

SU PPLY VOL TAGE: Vcc(V)

SUPPLY CURRENT (WRAL): I

CC3

(mA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

0.5

1

1.5

2

2.5

0123456

SU PPL Y VOL TAGE: Vc c(V)

STANDBY CURRENT : I

SB1

(uA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

Figure 16. Supply Current (READ) vs Supply Voltage

(fSK=3MHz)

Figure 17. Supply Current (WRAL) vs Supply Voltage

(fSK=1MHz)

Figure 18. Supply Current (WRAL) vs Supply Voltage

(fSK=3MHz)

Figure 19. Standby Current vs Supply Voltage

(CS=0V, ORG=VCC or OPEN)

0

0.5

1

1.5

2

2.5

0123456

SUPPL Y VOLTAGE: Vcc(V)

SUPPLY CURRENT (WRAL): I

CC3

(mA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

11/36

Datasheet

BR93G66-3

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15.Jun.2016 REV.003

TSZ22111・15・001

Typical Performance Curves‐Continued

0

5

10

15

20

0123456

SU PPLY VOL TAGE: Vc c(V)

STANDBY CURRENT : I

SB2

(uA)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

100

200

300

400

500

0123456

SUPPLY VOLTAGE: Vcc(V)

SK HIGH TIME : t

SKH

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

Figure 20. Standby Current vs Supply Voltage

(CS=0V, ORG=0V)

Fi

gure

21

.

SK

F

requenc

y

vs

S

upp

l

y

V

o

l

tage

Fi

gure

2

.

SK

Hi

g

h

Ti

me vs

S

upp

l

y

Vlt

Fi

gure

2

3

.

SK

L

o

w

Ti

me vs

S

upp

l

y

V

o

l

tage

0.01

0.1

1

10

100

1000

0123456

SUPPLY VOLTAGE: Vcc(V)

SK FREQUENCY : f

SK

(MHz)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

0

100

200

300

400

500

0123456

SU PPLY VOL TAGE: Vcc(V)

SK LOW TIME : t

SKL

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

12/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Typical Performance Curves‐Continued

-300

-250

-200

-150

-100

-50

0

50

0123456

SUPPLY VOLTAGE: Vcc(V)

CS HOLD TIME : t

CSH

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

0

100

200

300

400

500

0123456

SUPPLY VOLTAGE: Vcc(V)

CS LOW TIME : t

CS

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

0

50

100

150

200

250

300

0123456

SUPPLY VOLTAGE: Vcc(V)

CS SETUP TIME : t

CSS

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

-50

0

50

100

150

0123456

SUPPL Y VOL TAGE: Vcc(V)

DI SETUP TIME : t

DIS

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

Fi

gure

2

4

.

CS

L

o

w

Ti

me vs

S

upp

l

y

V

o

l

tage

Fi

gure

2

5.

CS

H

o

ld

Ti

me vs

S

upp

l

y

V

o

l

tage

Fi

gure

2

6

.

CS

S

etup

Ti

me vs

S

upp

l

y

V

o

l

tage

Fi

gure

2

7.

DI

S

etup

Ti

me vs

S

upp

l

y

V

o

l

tage

13/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Typical Performance Curves‐Continued

-50

0

50

100

150

0123456

SUPPL Y VOL TAGE: Vcc(V)

DI HOLD TIME : t

DIH

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃ SPEC

0

200

400

600

800

1000

0123456

SUPPLY VOLTAGE: Vcc(V)

DATA "0" OUTPUT DELAY : t

PD0

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

0

100

200

300

400

500

0123456

SUPPL Y VOLTAGE: Vcc(V)

TIME FROM CS TO OUTPUT ESTABLISHMENT

:

tSV(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

Fi

gure

2

8

.

DI

H

o

ld

Ti

me vs

S

upp

l

y

V

o

l

tage

Fi

gure

2

9

.

D

ata

"0"

O

utput

D

e

l

ay vs

Supply Voltage

Fi

gure

30

.

D

ata

"1"

O

utput

D

e

l

ay

vs Supply Voltage

Fi

gure

31

.

Ti

me

f

rom

CS

to output esta

bli

s

h

ment

vs Supply Voltage

0

200

400

600

800

1000

0123456

SUPPLY VOLTAGE: Vcc(V)

DATA "1" OUTPUT DELAY : t

PD1

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

14/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Typical Performance Curves‐Continued

0

50

100

150

200

250

0123456

SU PPL Y VOL TAGE: Vcc(V)

TIME FROM CS TO HIGH-Z : t

DF

(ns)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

SPEC

0

1

2

3

4

5

6

0123456

SU PPLY VOL TAGE: Vcc(V)

WRITE CYCLE TIME : t

E/W

(ms)

SPEC

Ta=-40℃

Ta= 25℃

Ta= 85℃

Fi

gure

3

2

.

Ti

me

f

rom

CS

to

Hi

g

h

-

Z

vs

Supply Voltage

Fi

gure

3

.

W

r

i

te

C

yc

l

e

Ti

me vs

Supply Voltage

15/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Description of Operations

Communications of the MicroWire BUS are carried out by SK (serial clock), DI (serial data input),DO (serial data output) ,and

CS (chip select) for device selection.

When connecting one EEPROM to a microcontroller, connect it as shown in Figure 34(a) or Figure 34(b). And when using

the input and output common I/O port of the microcontroller, connect DI and DO of EEPROM via a resistor as shown in

Figure 34(b) (Refer to pages 21, 22.), wherein connection by 3 lines is possible.

In the case of connecting multiple EEPROM devices, refer to Figure 34 (c).

Communications on MicroWire BUS is started by the first “1” input after the rise of CS. This input is called the “Start Bit”.

After the start bit, the Ope code, address and data are then inputted sequentially. Address and data are all inputted with MSB

first.

“0” inputs from the rise of CS to the start bit input are all ignored. Therefore, when there is limitation in the bit width of PIO of

the microcontroller, input “0” before the start bit input, to control the bit width.

Command Mode

ORG=H or OPEN

Command Start

Bit

Ope

Code

Address

Data

MSB of Data(Dx) is D15 Required Clocks(n)

BR93G66-3

MSB of Address(Am) is A7

Read (READ) (1) 1 10 A7,A6,A5,A4,A3,A2,A1,A0 D15 to D0(READ DATA) BR93G66-3:n=27

Write Enable (WEN) 1 00 1 1 * * * * * *

BR93G66-3:n=11

Write Disable (WDS) 1 00 0 0 * * * * * *

Write (WRITE) (2) 1 01 A7,A6,A5,A4,A3,A2,A1,A0 D15 to D0(WRITE DATA) BR93G66-3:n=27

Write All (WRAL) (2) 1 00 0 1 * * * * * * D15 to D0(WRITE DATA)

Erase (ERASE) 1 11 A7,A6,A5,A4,A3,A2,A1,A0

BR93G66-3:n=11

Erase All (ERAL) 1 00 1 0 * * * * * *

ORG=L

Command Start

Bit

Ope

Code

Address Data

MSB of Data(Dx) is D7 Required Clocks(n)

BR93G66-3

MSB of Address(Am) is A8

Read (READ) (1) 1 10 A8,A7,A6,A5,A4,A3,A2,A1,A0 D7 to D0(READ DATA) BR93G66-3:n=20

Write Enable (WEN) 1 00 1 1 * * * * * * *

BR93G66-3:n=12

Write Disable (WDS) 1 00 0 0 * * * * * * *

Write (WRITE) (2) 1 01 A8,A7,A6,A5,A4,A3,A2,A1,A0 D7 to D0(WRITE DATA) BR93G66-3:n=20

Write All (WRAL) (2) 1 00 0 1 * * * * * * * D7 to D0(WRITE DATA)

Erase (ERASE) 1 11 A8,A7,A6,A5,A4,A3,A2,A1,A0

BR93G66-3:n=12

Erase All (ERAL) 1 00 1 0 * * * * * * *

・ Input the address and the data in MSB first manners.

・ As for *, input either “1” or “0” .

*Start bit

Acceptance of all the commands of this IC starts at recognition of the start bit.

The start bit means the first “1” input after the rise of CS.

(1) As for read, by continuous SK clock input after setting the read command, data output of the set address starts, and address data in significant order are

sequentially output continuously. (Auto increment function)

(2) For write or write all commands, an internal erase or erase all is included and no separate erase or erase all is needed before write or write all command.

(a). Connection by 4 Lines

CS

SK

DO

DI

CS

SK

DI/O

CS

SK

DI

DO

(b). Connection by 3 Lines

CS

SK

DI

DO

CS3

CS2

CS1

SK

DO

DI

CS

SK

DI

DO

Device 1

CS

SK

DI

DO

Device 2

CS

SK

DI

DO

Device 3

(c). Connection Example of Multiple Devices

Figure 34. Connection Method with Microcontroller

Micro-

controller

BR93GXX

Micro-

controller

Micro-

controller

BR93GXX

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Timing Chart

1. Read Cycle (READ)

(1) Start bit

After the rising edge of CS, the first data “1” input will be recognized as the start bit and the following operation starts. All “0s” preceding the start bit

are ignored. This applies to all command that will be discussed later.

(2) For the meaning of Am,Dx,n,please see tables of command mode in Page15. For example, ORG=H or OPEN,Am=A7,Dx=D15,n=27.

(1) When the READ command is received, data is clocked out to DO synchronously with the rising edge of SK. A “0”

(dummy bit) is output first in sync with the address bit A0. Then follows the 16-bit data from the selected address

MSB first.

This IC has an Address Auto Increment function that is available only for READ command. After the first 16-bit data

has been output to DO and CS is kept High, a continuous SK clock input causes the address to increment

automatically and the IC outputs a stream of successive data from consecutive addresses.

2. Write Cycle (WRITE)

For the meaning of Am,Dx,n, please see tables of command mode in Page15.

(1) In this command, input 16bit or 8bit data are written to designated addresses (Am to A0). The actual write starts by

the fall of CS of D0 taken SK clock.

When STATUS is not detected (CS=low fixed),make sure Max 5ms time is in comforming with tE/W.

When STATUS is detected (CS=high), all commands are not accepted for areas where low (BUSY) is output from

DO, therefore, do not input any command.

3. Write All Cycle (WRAL)

For the meaning of Dx,n,please see tables of command mode in Page15.

(1) In this command, input 16bit or 8bit data is written simultaneously to all adresses. Data is not written continuously

per one word but is written in bulk, the write time is only Max 5ms in conformity with tE/W.

In WRAL, STATUS can be detected in the same manner as in WRITE command.

CS

1

2

1

4

High-Z

1

A

m

A

1

A

0

Dx Dx-1 D1

Dx Dx-1

(1)

(2)

D0

SK

DI

DO

0

～

n

n+1

(2)

CS

1 2

1

4

High-Z

0

A

m

A

1

A

0Dx Dx-1 D1

～

D0

SK

DI

DO

1

～

n

STATUS

t

CS

t

SV

BUSY

～

t

E/W

READY

CS

1 2

1

5

High-Z

0 0 0 Dx Dx-1 D1

～

D0

SK

DI

DO

～

n

STATUS

t

CS

t

SV

BUSY

～

t

E/W

READY

1

～

Figure 35. Read Cycle

Figure 36. Write Cycle

Figure 37. Write All Cycle

Am: MSB of address

Dx: MSB of data

n: required clocks

Am: MSB of address

Dx: MSB of data

n: required clocks

Dx: MSB of data

n: required clocks

17/36

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TSZ22111・15・001

4. Write Enable (WEN) / Disable (WDS) Cycle

For the meaning of n,please see tables of command mode in Page15.

(1) At power on, this IC is in write disable status by the internal RESET circuit. Before executing the write command, it

is necessary to execute the write enable command. And, once this command is executed, it is valid unitl the write

disable command is executed or the power is turned off. However, the read command is valid irrespective of write

enable / diable command. Input to SK after 6 clocks of this command is available by either “1” or “0”, but be sure to

input it.

(2) When the write enable command is executed after power on, write enable status gets in. When the write disable

command is executed then, the IC gets in write disable status as same as at power on, and then the write command

is canceled thereafter in software manner. However, the read command is executable. In write enable status, even

when the write command is input by fault, write is started. To prevent such error, it is recommended to execute the

write disable command after completion of write.

5. Erase Cycle (ERASE)

For the meaning of Am,n,please see tables of command mode in Page15.

(1) In this command, data of the designated address is made into “1”. The data of the designated address becomes

“FFFFh or FFh”.

Actual ERASE starts at the fall of CS after the fall of A0 taken SK clock.

In ERASE, STATUS can be detected in the same manner as in WRITE command.

6. Erase All Cycle (ERAL)

For the meaning of n,please see tables of command mode in Page15.

(1) In this command, data of all addresses is made into “1”. Data of all addresses becomes ”FFFFh or FFh”.

Actual ERASE starts at the fall of CS after the falll of the n-th clock from the start bit input.

In ERAL, STATUS can be detected in the same manner as in WRAL command.

Figure 38. Write Enable (WEN) / Disable (WDS) Cycle

CS

1

2

1 1 1

4

High-Z

～

SK

DI

DO

～

STATUS

t

CS

t

SV

BUSY

t

E/W

READY

A

m

～

A

3

A

2

A

1

n

A

0

～

Figure 39. Erase Cycle

CS

1

2

1

4

High-Z

SK

DI

DO

～

STATUS

t

CS

t

SV

BUSY

～

t

E/W

READY

1

n

～

0 0

0

～

Figure 40. Erase All Cycle

CS

1

2

1

5

High-Z

0 0

SK

DI

DO

n3 4 6

7

8

ENABLE=1 1

DISABLE=0 0

～

n: required clocks

Am: MSB of address

n: required clocks

18/36

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BR93G66-3

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TSZ22111・15・001

Application

1. Method to cancel each c ommand

(1) READ

(2) WRITE,WRAL

(3) ERASE, ERAL

(1) For the meaning of m,x, please see tables of Command Mode in Page15

Figure 41. READ Cancel Available Timing

Note 1) If Vcc is turned OFF in this area, designated address data is not

guaranteed, therefore, it is recommended to execute WRITE

once again.

Note 2) If CS is started at the same timing as that of the SK rise,

write execution/cancel becomes uncertain. Therefore, it is

recommended to set CS to low in SK=low area.

As for SK rise, recommended timing is tCSS/tCSH or higher.

Figure 42. WRITE, WRAL Cancel Available Timing

Start bit Ope code Address Data

1bit 2bit m+1bit x+1bit

Cancel is available in all areas in read mode.

・Method to cancel：cancel by CS=low

(1)

a：From start bit to the clock rise of D0 taken

Cancel by CS=low

b：When taken after the clock rise of D0.

Cancellation will be no longer possible.

c：n+1 clock rise and after

Cancel by CS=low

However, when write is started in b area (CS is ended), cancellation is

not available by any means.

And when SK clock is output continuously cancel function is not

available.

Start bit Ope code Address Data t

E/W

a

(1)

1bit 2bit m+1bit x+1bit

c

b

(1) For the meaning of m,n,x,

please see tables of Command Mode in Page15

(1)

Figure 43. ERASE, ERAL Cancel Available Timing

a：From start bit to clock rise of A0 taken

Cancel by CS=low

b：Clock rise of A0 taken

Cancellation is not available by any means.

c：n+1 clock rise and after

Cancel by CS=low

However, when write is started in b area (CS is ended), cancellation is not

available by any means.

And when SK clock is output continuously cancel function is not available.

Note 1) If Vcc is turned OFF in this area, designated address data is not

guaranteed, therefore, it is recommended to execute WRITE

once again.

Note 2) If CS is started at the same timing as that of the SK rise,

write execution/cancel becomes unstable, therefore, it is

recommended to fall in SK=low area.

As for SK rise, recommended timing is tCSS/tCSH or higher.

(1) For the meaning of m,n,please see tables of Command Mode in Page15

Clock rise of A0 taken

SK

DI

n-1

A1

n n+1 n+2

b c

a

Enlarged figure

A0

Clock Rise of D0 taken

SK

DI

n-1

D1

D0

n n+1 n+2

b

Enlarged figure

c

a

A1

1bit 2bit m+1bit

a c

b

Start bit Ope code Address t

E/W

(1)

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TSZ22111・15・001

2. At Standby

When CS is low and ORG is high or OPEN, even if SK,DI, DO are low, high or with middle electric potential, current

does not exceed ISB1 Max

When CS is low, even if SK,DI, DO and ORG are low, high or with middle electric potential, current does not exceed ISB2

Max

3. I/O Peripheral Circuit

(1) Pull Down CS.

By making CS=low at power ON/OFF, wrong operation and write error are prevented.

(a) Pull Down Resistance RCS of CS Pin

To prevent wrong operation and write error at power ON/OFF, CS pull down resistor is necessary. Select an

appropriate resistor value from microcontroller VOH, IOH, and VIL characteristics of this IC.

(2) DO is available in both pull up and pull down.

DO output always is High-Z except in READY / BUSY STATUS and data output in read command.

When malfunction occurs at High-Z input of the microcontroller port connected to DO, it is necessary to pull down

and pull up DO. When there is no influence upon the microcontroller operations, DO may be left OPEN.

If DO is OPEN during transition of output from BUSY to READY status, and at an instance where CS=high,

SK=high, DI=high, EEPROM recognizes this as a start bit, resets READY output, and sets DO=High-Z. Therefore,

READY signal cannot be detected. To avoid such output, pull up DO pin for improvement.

Figure 45. READY Output Timing at DO=OPEN

Microcontroller

V

OHM

High output I

OHM

Rcs

V

IHE

Low input

EEPROM

Figure 44. CS Pull Down Resistance

VOHM

IOHM

Rcs ≧ ・・・①

2.4

2×10-3

∴ Rcs

≧ 1.2 [kΩ]

VOHM ≧ V

IHE ・・・②

Rcs ≧

Example) When Vcc =5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,

from the equation ①,

・VIHE

・VOHM

・IOHM

With the value of Rpd to satisfy the above equation, VOHM becomes

2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.

: EEPROM VIH specifications

: Microcontroller VOH specifications

: Microcontroller IOH specifications

CS

SK

DI

DO

D0

BUSY

READY

High-Z

Enlarged

CS

SK

DI

DO

BUSY

High-Z

Improvement by DO pull up

BUSY

READY

CS=SK=DI=High

When DO=OPEN

CS=SK=DI=High

When DO=pull up

DO

High

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(a) Pull Up Resistance RPU and Pull Down Resistance RPD of DO pin

As for pull up and pull down resistance value, select an appropriate resistor value from microcontroller VIH, VIL,

and VOH, IOH, VOL, IOL characteristics of this IC.

(b) READY / BUSY STATUS display (DO terminal)

This display outputs the internal STATUS signal. When CS is started after tCS

from CS fall after write command input, high or low is output.

R/B display＝low (BUSY) = write under execution

After the timer circuit in the IC works and creates the period of tE/W, this timer circuit completes automatically.

And the memory cell is written in the period of tE/W, and during this period, other command is not accepted.

R/B display = high (READY) = command wait STATUS

After tE/W (Max5ms) the following command is accepted.

Therefore, CS=high in the period of tE/W, and If signals are input in SK, DI, malfunction may occur,

therefore, DI=low in the area

CS=high. (Especially, in the case of shared input port, attention is required.)

*Do not input any command while STATUS signal is active. Command input in BUSY area is cancelled, but command input in READY area is accepted.

Therefore, STATUS READY output is cancelled, and malfunction and write error may occur.

Microcontroller

V

ILM

Low input

I

OLE

V

OLE

Low output

EEPROM

Rpu

Microcontroller

V

IHM

High input I

OHE

V

OHE

High output

EEPROM

Rpd

Figure 46. DO Pull Up Resistance

Rpu ≧ ・・・③

5－0.4

2.1×10-3

∴ Rpu

≧ 2.2 [kΩ]

VOLE ≦ V

ILM ・・・④

Rpu ≧

Example) When Vcc =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,

from the equation ③,

Vcc－VOLE

IOLE

With the value of Rpu to satisfy the above equation, VOLE becomes

0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied.

Rpd ≧ ・・・⑤

5－0.2

0.1×10-3

∴ Rpd

≧ 48 [kΩ]

VOHE ≧ V

IHM ・・・⑥

Rpd ≧

Example) When Vcc =5V, VOHE=Vcc－0.2V, IOHE=0.1mA,

VIHM=Vcc×0.7V from the equation ⑤,

VOHE

IOHE

With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V

or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.

Figure 47. DO Pull Down Resistance

（DO STATUS）

Figure 48. READY/BUSY STATUS Output Timing Chart

: EEPROM VOL specifications

: EEPROM IOL specifications

: Microcontroller VIL specifications

・VOLE

・IOLE

・VILM

: EEPROM VOH specifications

: EEPROM IOH specifications

: Microcontroller VIH specifications

・VOHE

・IOHE

・VIHM

CS

High-Z

SK

DI

DO

CLOCK

WRITE

INSTRUCTION

READY

STATUS

tSV

BUSY

tE/W

21/36

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15.Jun.2016 REV.003

TSZ22111・15・001

4. When to Directly Connect DI and DO

This IC has independent input terminal DI and output terminal DO, wherein signals are handled separately on timing chart.

But, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by a single control

line.

Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input of EEPROM.

Drive from the microcontroller DI/O output to DI input of EEPROM on I/O timing, and output signal from DO output of

EEPROM occur at the same time in the following points.

(1) 1 Clock Cycle to take in A0 Add re ss Data at Read Command

Dummy bit “0” is output to DO terminal.

→When address data A0 = “1” input, through current route occurs.

(2) Timing of CS = high after write command. DO terminal in READY / BUSY function output.

When the next start bit input is recognized, High-Z gets in.

→Especially, at command input after write, when CS input is started with microcontroller DI/O output low,

READY output high is output from DO terminal, and through current route occurs.

Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted.

Note) As for the case (2), attention must be paid to the following.

When STATUS READY is active, DO and DI are shared, DI=high and the microcontroller DI/O=High-Z or the microcontroller DI/O=high,if SK clock

is input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at STATUS READY

output, set SK=low, or start CS within 4 clocks after high of READY signal is output.

Figure 49. DI, DO Control Line Common Connection

EEPROM CS input

EEPROM SK input

EEPROM DI input

EEPROM DO output

Microcontroller DI/O port

A1

High-Z

Collision of DI input and DO output

High

A0

0 Dx Dx-1 Dx-2

A1 A0 High-Z

Microcontroller output Microcontroller input

Figure 50. Collision Timing at Read Data Output at DI, DO Direct Connection

EEPROM CS input

EEPROM SK input

EEPROM DI input

EEPROM DO output

Microcontroller DI/O port

Write command

Microcontroller output

BUSY

BUSY READY

READY

Collision of DI input and DO output

～

High-Z

Write command

Microcontroller input Microcontroller output

Figure 51. Collision Timing at DI, DO Direct Connection

CS

SK

DI

DO

READY

High-Z

Start bit

Because DI=high, se

t

SK=low at CS rise.

Figure.52 Start Bit Input Timing at DI, DO Direct Connection

(1)

(1) For the meaning of x ,

please see tables of Command Mode in Page15.

Microcontroller

DI/O PORT

DI

EEPROM

DO

R

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Selection of Resistance Value R

The resistance R becomes a short-circuit current limiting resistance during signal conflicts and it does not affect the

basic operations of the device. When short-circuit current flows, glitches in the power source lines may be produced.

Determine the maximum transient current in the power lines wherein glitches are not produced. Select the value of

resistance R that will satisfy the EEPROM input level VIH/VIL, even under the influence of voltage fluctuations resulting

from short-circuit current and so forth. Assuming the allowable short-circuit current defined as I, the following relation

should be satisfied.

(3) Address Data A0 = “1” input, dummy bit “0” Output Timing

(When microcontroller DI/O output is high, EEPROM DO outputs low, and high is input to DI)

(a) Make the through current to EEPROM 10mA or below.

(b) See to it that the level VIH of EEPROM should satisfy the following.

(4) DO STATUS READY Output Timing

(When the microcontroller DI/O is low, EEPROM DO output high, and low is input to DI)

(a) Set the EEPROM input level VIL so as to satisfy the following.

Microcontroller

DI/O PORT DI

EEPROM

DO

R

High output

IOHM

VOHM

VOLE

Low outpu

Figure 53. Circuit at DI, DO Direct Connection (Microcontroller DI/O high output, EEPROM low output)

Conditions

VIHE ≦ I

OHM×R + VOLE

At this moment, if VOLE=0V,

V

IHE ≦ I

OHM×R

∴ R ≧ ・・・⑦

VIHE

IOHM

Microcontroller

DI/O PORT DI

EEPROM

DO

R

Low output

IOLM

VOLM

VOHE High output

Conditions

VILE ≧ V

OHE – IOLM×R

As this moment, VOHE=Vcc

V

ILE ≧ Vcc – IOLM×R

∴ R ≧ ・・・⑧

Vcc – VILE

IOLM

Figure 54. Circuit at DI, DO Direct Connection (Microcontroller DI/O low output, EEPROM high output)

Example) When VCC=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,

From the equation ⑦, From the equation⑧,

R ≧

VIHE

IOHM

3.5

0.4×10-3

∴ R ≧ 8.75 [kΩ] ・・・⑨

R ≧

Vcc – VILE

IOLM

5 – 1.5

2.1×10-3

∴ R ≧ 1.67 [kΩ] ・・・⑩

Therefore, from the equations ⑨ and ⑩,

∴ R ≧ 8.75 [kΩ]

: EEPROM VIH specifications

: EEPROM VOL specifications

: Microcontroller IOH specifications

・VIHE

・VOLE

・IOHM

: EEPROM VIL specifications

: EEPROM VOH specifications

: Microcontroller IOL specifications

・VILE

・VOHE

・IOLM

23/36

Datasheet

BR93G66-3

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15.Jun.2016 REV.003

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5. I/O Equivalence Circuit

6. Power-Up/Down Conditions

(1) At pow er ON/OFF, set CS low.

When CS is high, this IC gets in input accept status (active). At power ON, set CS low to prevent malfunction and

write error from noise (When CS is in low status, all inputs are cancelled.). At power decline, low power status may

prevail.

Therefore, at power OFF, set CS low to prevent malfunction from noise.

(2) POR Circuit

This IC has a POR (Power On Reset) circuit as a write error countermeasure. After POR operation, it gets in write

disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if

CS is high at power ON/OFF, it may become write enable status owing to noises and the likes. For secure

operations, observe the following conditions.

(a) Set CS=low

(b) Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit operation.

(3) LVCC Circuit

LVCC (Vcc-Lockout) circuit prevents data rewrite operation at low power, and prevents wrong write.

At LVCC voltage (Typ=1.2V) or below, it prevents data rewrite .

Output Circuit

DO

OEint.

Input Circuit

CS CSint.

RESET int.

Input Circuit

DI

CS int.

Input Circuit

SK

CS int.

Figure 55. Output Circuit (DO)

Figure 57. Input Circuit (DI)

Figure 56. Input Circuit (CS)

Figure 58. Input Circuit (SK)

tOFF

tR

Vbot

0

VCC

GND

VCC

GND

VCC

CS

Bad example Good example

Figure 59. Timing at Power ON/OFF

Figure 60. Rise Waveform Diagram

（Bad example）CS pin is pulled up to VCC

When IC is turned ON while CS is high, EEPROM malfunction write error may occur

due to noise and the likes.

It’s also possible to happen even when CS input is High-Z.

（Good example）It is low at power ON/OFF.

Set 10ms or higher to recharge at power OFF.

When power is turned on without observing this condition,

IC internal circuit may not be reset, which please note.

Recommended conditions of tR, tOFF, Vbot

tR t

OFF Vbot

10ms or below 10ms or higher 0.3V or below

100ms or below 10ms or higher 0.2V or below

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Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

7. Noise Countermea sures

(1) VCC Noise (Bypass Capacitor)

When noise or surge gets in the power source line, malfunction may occur. Therefore, in removing these, it is

recommended to connect a bypass capacitor (0.1μF) between IC VCC and GND, At that moment, connect the

capacitor as close to IC as possible. And, it is also recommended to connect a bypass capacitor between board

VCC and GND.

(2) SK Noise

When the rise time of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to

clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit

is set about 0.2V, if noises exist at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set

the rise time of SK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise

countermeasures. Make the clock rise, fall time as small as possible.

25/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Operational Notes

1. Described numeric values and data are design representative values only, and the values are not guaranteed.

2. We believe that application circuit examples are recommendable. However, in actual use, confirm characteristics further

sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin

in consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.

3. Absolute maximum ratings

If the absolute maximum ratings such as supply voltage and operating temperature and so forth are exceeded, LSI may

be destroyed. Do not supply voltage and temperature exceeding the absolute maximum ratings. In the case of fear

exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that

conditions exceeding the absolute maximum ratings should not be supplied to LSI.

4. GND electric potential

Set the voltage of GND terminal lowest at any operating condition. Make sure that each terminal voltage is not lower

than that of GND terminal at any time, even during transient condition.

5. Thermal design

Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in

actual operating conditions.

6. Short between pins and mounting errors

Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong

orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the

pins.

7. Operating the IC in the presence of strong electromagnetic field may cause malfunction, therefore, evaluate design

sufficiently.

26/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Part Numbering

B R 9 3 G 6 6 x x x －3 x x x x x

Orderable Part Number Package Remark

Type Quantity

BR93G66 -3 DIP-T8 Tube of 2000 Not Halogen free 100% Sn

BR93G66F -3GTE2 SOP8 Reel of 2500 Halogen free 100% Sn

BR93G66FJ -3GTE2 SOP-J8 Reel of 2500 Halogen free 100% Sn

BR93G66FV -3GTE2 SSOP-B8 Reel of 2500 Halogen free 100% Sn

BR93G66FVT -3GE2 TSSOP-B8 Reel of 3000 Halogen free 100% Sn

BR93G66FVJ -3GTE2 TSSOP-B8J Reel of 2500 Halogen free 100% Sn

BR93G66FVM -3GTTR MSOP8 Reel of 3000 Halogen free 100% Sn

BR93G66NUX -3TTR VSON008X2030 Reel of 4000 Halogen free 100% Sn

BUS type

93：MicroWire

Operating temperature

/ Operating Voltage

-40℃ to +85℃/ 1.7V to 5.5V

Process code

Pin assignment

Blank: Pin1~8: CS, SK, DI, DO, GND, ORG, DU, VCC respectively

A : Pin1~8: CS, SK, DI, DO, GND, NC, DU, VCC respectively

B : Pin1~8: DU, VCC, CS, SK, DI, DO, GND, NC respectively

66=4K

Capacity

Package

Blank :DIP-T8

F :SOP8

FJ :SOP-J8

FV :SSOP-B8

FVT :TSSOP-B8

FVJ :TSSOP-B8J

FVM :MSOP8

NUX :VSON008X2030

Packaging and forming specification

E2 : Embossed tape and reel

(SOP8,SOP-J8, SSOP-B8,TSSOP-B8, TSSOP-B8J)

TR : Embossed tape and reel

(MSOP8, VSON008X2030)

Blank : Tube

(DIP-T8)

G : Halogen free

Blank: Not Halogen free

As an exception, VSON008X2030

package will be Halogen free with “Blank”

T : 100% Sn

Blank: 100% Sn

27/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Physical Dimensions Tape and Reel Information

∗ Order quantity needs to be multiple of the minimum quantity.

TubeContainer

Quantity

Direction of feed 2000pcs

Direction of products is fixed in a container tube

(Unit : mm)

DIP-T8

0°−15°

7.62

0.3±0.1

9.3±0.3

6.5±0.3

85

14

0.51Min.

3.4±0.3

3.2±0.2

2.54 0.5±0.1

28/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

∗ Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

()

Direction of feed

Reel 1pin

(Unit : mm)

SOP8

0.9±0.15

0.3MIN

4

°

+

6

°

−

4

°

0.17 +0.1

-

0.05

0.595

6

43

8

2

5

1

7

5.0±0.2

6.2±0.3

4.4±0.2

(MAX 5.35 include BURR)

1.27

0.11

0.42±0.1

1.5±0.1

S

0.1 S

29/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

∗ Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

()

Direction of feed

Reel 1pin

(Unit : mm)

SOP-J8

4°+6°

−4°

0.2±0.1

0.45MIN

234

5678

1

4.9±0.2

0.545

3.9±0.2

6.0±0.3

(MAX 5.25 include BURR)

0.42±0.1

1.27

0.175

1.375±0.1

0.1 S

S

30/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

∗ Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

()

Direction of feed

Reel 1pin

(Unit : mm)

SSOP-B8

0.08 M

0.3MIN

0.65

(0.52)

3.0±0.2

0.15±0.1

(MAX 3.35 include BURR)

S

0.1

1234

5678

0.22

6.4±0.3

4.4±0.2

+0.06

−0.04

0.1

1.15±0.1

31/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Direction of feed

Reel ∗ Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

3000pcs

E2

()

1pin

(Unit : mm)

TSSOP-B8

0.08 S

0.08 M

4 ± 4

234

8765

1

1.0±0.05

1PIN MARK

0.525

0.245+0.05

−0.04

0.65

0.145+0.05

−0.03

0.1±0.05

1.2MAX

3.0±0.1

4.4±0.1

6.4±0.2

0.5±0.15

1.0±0.2

(MAX 3.35 include BURR)

S

32/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Direction of feed

Reel ∗ Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

2500pcs

E2

()

1pin

(Unit : mm)

TSSOP-B8J

0.08 M

0.08 S

S

4 ± 4

(MAX 3.35 include BURR)

578

1234

6

3.0±0.1

1PIN MARK

0.95±0.2

0.65

4.9±0.2

3.0±0.1

0.45±0.15

0.85±0.05

0.145

0.1±0.05

0.32

0.525

1.1MAX

+0.05

−0.03

+0.05

−0.04

33/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Direction of feed

Reel ∗ Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

3000pcs

TR

()

1pin

(Unit : mm)

MSOP8

0.08 S

S

4.0±0.2

8

3

2.8±0.1

1

6

2.9±0.1

0.475

4

57

(MAX 3.25 include BURR)

2

1PIN MARK

0.9MAX

0.75±0.05

0.65

0.08±0.05

0.22 +0.05

−0.04

0.6±0.2

0.29±0.15

0.145 +0.05

−0.03

4°

+6°

−4°

34/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

∗ Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

4000pcs

TR

()

Direction of feed

Reel 1pin

(Unit : mm)

VSON008X2030

5

1

8

4

1.4±0.1

0.25

1.5±0.1

0.5

0.3±0.1

0.25 +0.05

−0.04

C0.25

0.6MAX

(0.12)

0.02+0.03

−0.02 3.0±0.1

2.0±0.1

1PIN MARK

0.08 S

S

35/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Marking Diagrams

DIP-T8 (TOP VIEW)

BR93G66

Part Number Marking

LOT Number

SOP8(TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

SOP-J8(TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

TSSOP-B8(TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

TSSOP-B8J(TOP VIEW)

Part Number Marking

LOT Numbe

r

1PIN MARK

SSOP-B8(TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

VSON008X2030 (TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

MSOP8(TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

9G66

9G66 9 G C

9 G 6 6

9G6

9GC 9G6

6G3

9G3

36/36

Datasheet

BR93G66-3

www.rohm.com TSZ02201-09190G100040-1-2

15.Jun.2016 REV.003

TSZ22111・15・001

Revision History

Date Revision Changes

27.Aug.2012 001 New Release

27.Feb.2013 002

Update some English words, sentences’ descriptions, grammar and formatting.

Delete “Status of this document” in page 25.

Delete “Lineup” after “Part numbering “ in page26.

15.Jun.2016 003

Add Halogen free and 100% Sn information to page 26.

Add Part Number list to page 26.

Notice-PGA-E Rev.003

Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅡb

CLASSⅢ

CLASSⅣ

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

DatasheetDatasheet

Notice – WE Rev.001

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or

liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or

concerning such information.