1N914UR Available on commercial version Qualified Levels: JAN, JANTX, and JANTXV Glass MELF Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This popular 1N914UR JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. Previously listed as a CDLL914 this small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-213AA package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR'ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes. DO-213AA Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent of popular JEDEC registered 1N914 number. * Hermetically sealed glass construction. Also available in: * Metallurgically bonded. * Double plug construction. * Very low capacitance. * Very fast switching speeds with minimal reverse recovery times. * JAN, JANTX, and JANTXV qualification is available per MIL-PRF-19500/116. * RoHS compliant version available (commercial grade only). DO-35 package (axial-leaded) 1N914 (See part nomenclature for all available options.) APPLICATIONS / BENEFITS * * * * * * * High frequency data lines. Small size for high density mounting using the surface mount method (see package illustration). RS-232 & RS-422 interface networks. Ethernet 10 Base T. Low-capacitance steering diodes. LAN. Computers. MAXIMUM RATINGS @ 25 C Parameters/Test Conditions Symbol TJ & TSTG RJA RJEC Junction and Storage Temperature (1) Thermal Resistance Junction-to-Ambient (2) Thermal Resistance Junction-to-Endcap Maximum Breakdown Voltage Working Peak Reverse Voltage (3) Average Rectified Current @ TA = 75 C Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms) V(BR) VRWM IO IFSM Value -65 to +175 325 100 100 Unit o C o C/W o C/W V 75 200 2 V mA A (pk) NOTES: 1. TA = +75C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, in still air; pads = .061 inch (1.55 mm) x.105 inch (2.67 mm); RJA with a defined PCB thermal resistance condition included, is measured at IO = 200 mA dc. 2. See Figure 2 for thermal impedance curves. 3. See Figure 1 for derating. T4-LDS-0279-1, Rev. 1 (121565) (c)2012 Microsemi Corporation MSC - Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC - Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Page 1 of 4 1N914UR MECHANICAL and PACKAGING * * * * * * * * CASE: Hermetically sealed glass case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N914 UR (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level Blank = Commercial grade RoHS Compliance e3 = RoHS compliant (on commercial grade only) Blank = non-RoHS compliant MELF Surface Mount JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Definition Symbol IR IO trr VF VR VRWM Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum value). Reverse Voltage: The reverse voltage dc value, no alternating component. Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. ELECTRICAL CHARACTERISTICS @ 25 C unless otherwise noted FORWARD FORWARD REVERSE FORWARD VOLTAGE VOLTAGE RECOVERY RECOVERY VF2 @ TIME VF1 @ TIME trr tfr IF=10 mA IF=50 mA (Note 1) (Note 2) V V ns ns 0.8 1.2 5 20 NOTE 1: IF = IR = 10 mA, RL = 100 Ohms. NOTE 2: IF = 50 mA. T4-LDS-0279-1, Rev. 1 (121565) REVERSE CURRENT IR4 @ 75 V TA=150oC A CAPACITANCE C (Note 3) CAPACITANCE C (Note 4) A REVERSE CURRENT IR3 @ 20 V TA=150oC A pF pF 0.5 35 75 4.0 2.8 REVERSE CURRENT IR1 @ 20 V REVERSE CURRENT IR2 @ 75 V nA 25 NOTE 3: VR = 0 V, f = 1 MHz, VSIG = 50 mV (pk to pk). NOTE 4: VR = 1.5V, f = 1 MHz, VSIG = 50 mV (pk to pk). (c)2012 Microsemi Corporation Page 2 of 4 1N914UR DC Operation Maximum Io Rating (mA) GRAPHS TA (C) (Ambient) Theta (C/W) FIGURE 1 - Temperature - Current Derating Time (s) FIGURE 2 - Thermal Impedance T4-LDS-0279-1, Rev. 1 (121565) (c)2012 Microsemi Corporation Page 3 of 4 1N914UR PACKAGE DIMENSIONS DIM BD BL ECT S INCH MIN MAX 0.063 0.067 0.130 0.146 0.016 0.022 .001 min MILLIMETERS MIN MAX 1.60 1.70 3.30 3.71 0.41 0.56 0.03 min NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Dimensions are pre-solder dip. 3. Referencing to dimension S, minimum clearance of glass body to mounting surface on all orientations. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. PAD LAYOUT A B C T4-LDS-0279-1, Rev. 1 (121565) (c)2012 Microsemi Corporation INCH .200 .055 .080 mm 5.08 1.40 2.03 Page 4 of 4