NDS0610 NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. * -0.12A, -60V. RDS(ON) = 10 @ VGS = -10 V RDS(ON) = 20 @ VGS = -4.5 V * Voltage controlled p-channel small signal switch * High density cell design for low RDS(ON) * High saturation current D D S G SOT-23 S G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter -60 V VGSS Gate-Source Voltage 20 V ID Drain Current -0.12 A - Continuous (Note 1) -1 - Pulsed Maximum Power Dissipation PD (Note 1) Derate Above 25C TJ, TSTG Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds TL 0.36 2.9 W mW/C -55 to +150 C 300 C 350 C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RJA (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 610 NDS0610 7'' 8mm 3000 units (c) 2002 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: NDS0610/D Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage. On Characteristics VGS(th) VGS(th) TJ RDS(on) ID = -10 A VGS = 0 V, ID = -10 A,Referenced to 25C -60 V mV/C -53 -1 A VDS = -48 V,VGS = 0 V TJ = 125C -200 A VGS = 20 V, VDS = 0 V 10 nA VDS = VGS, ID = -1 mA VDS = -48 V, VGS = 0 V (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance -1 ID = -1 mA,Referenced to 25C ID(on) On-State Drain Current VGS = -10 V, ID = -0.5 A VGS = -4.5 V, ID = -0.25 A VGS = -10 V,ID = -0.5 A,TJ=125C VGS = -10 V, VDS = - 10 V gFS Forward Transconductance VDS = -10V, ID = - 0.1 A VDS = -25 V, f = 1.0 MHz V GS = 0 V, -1.7 3 -3.5 1.0 1.3 1.7 10 20 16 -0.6 70 V mV/C A 430 mS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) 79 pF 10 pF 4 pF VGS = -15 mV, f = 1.0 MHz 10 VDD = -25 V, VGS = -10 V, 2.5 5 ns ns (Note 2) Turn-On Delay Time ID = - 0.12 A, RGEN = 6 tr Turn-On Rise Time 6.3 12.6 td(off) Turn-Off Delay Time 10 15 ns tf Turn-Off Fall Time 7.5 15 ns Qg Total Gate Charge 1.8 2.5 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -48 V, VGS = -10 V ID = -0.5 A, 0.3 nC 0.4 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD trr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = -0.24 A(Note 2) IF = -0.5A diF/dt = 100 A/s (Note 2) -0.8 -0.24 A -1.5 V 17 nS 15 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 350C/W when mounted on a minimum pad.. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% www.onsemi.com 2 NDS0610 Electrical Characteristics NDS0610 Typical Characteristics 1.4 -4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 2.2 -4.5V VGS=-10V -6.0V 1.2 -3.5V 1 0.8 -3.0V 0.6 0.4 -2.5V 0.2 0 2 VGS=-3.0V 1.8 1.6 -3.5V 1.4 -4.0V -4.5V 1.2 -6.0V -10V 1 0.8 0 1 2 3 4 5 6 0 0.2 0.4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 0.8 1 1.2 1.4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 5 1.8 ID = -0.5A VGS = -10V 1.6 ID = -0.25A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 -ID, DRAIN CURRENT (A) 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 4 3 TA = 125oC 2 1 TA = 25oC 0 150 2 4 6 8 10 o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 1.2 25oC TA = -55oC -IS, REVERSE DRAIN CURRENT (A) VDS = -10V -ID, DRAIN CURRENT (A) 1 125oC 0.8 0.6 0.4 0.2 VGS = 0V 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 4 0.2 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 NDS0610 Typical Characteristics 100 VDS = -12V ID = -0.5A 8 80 -48V 6 4 60 40 COSS 2 20 0 0 CRSS 0 0.4 0.8 1.2 1.6 2 0 10 Qg, GATE CHARGE (nC) 30 40 50 60 Figure 8. Capacitance Characteristics. 5 P(pk), PEAK TRANSIENT POWER (W) 10 100us 1 RDS(ON) LIMIT 1ms 10ms 100ms 1s 0.1 10s DC VGS = -10V SINGLE PULSE RJA = 350oC/W 0.01 TA = 25oC 0.001 1 10 100 SINGLE PULSE RJA = 350C/W TA = 25C 4 3 2 1 0 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. -ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V CISS -24V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) * RJA 0.2 0.1 RJA = 350oC/W 0.1 0.05 0.01 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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