© 2014 IXYS CORPORATION, All Rights Reserved DS100310B(04/14)
IXFT50N60P3
IXFQ50N60P3
IXFH50N60P3
Polar3TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 600 V
VDGR TJ= 25C to 150C, RGS = 1M600 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 50 A
IDM TC= 25C, Pulse Width Limited by TJM 125 A
IATC= 25C25 A
EAS TC= 25C1 J
dv/dt IS IDM, VDD VDSS, TJ 150°C 35 V/ns
PDTC= 25C 1040 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in
Weight TO-268 4.0 g
TO-3P 5.5 g
TO-247 6.0 g
VDSS = 600V
ID25 = 50A
RDS(on)
160m
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 600 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 160 m
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
SD (Tab)
D
TO-268 (IXFT)
S
G
D (Tab)
TO-3P (IXFQ)
D
G
S
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 32 55 S
Ciss 6300 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 630 pF
Crss 2.5 pF
RGi Gate Input Resistance 1.0 
td(on) 31 ns
tr 20 ns
td(off) 62 ns
tf 17 ns
Qg(on) 94 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 nC
Qgd 23 nC
RthJC 0.12 C/W
RthCS (TO-247 & TO-3P) 0.25 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 50 A
ISM Repetitive, Pulse Width Limited by TJM 200 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 250 ns
IRM 11 A
QRM 1.1 μC
IF = 25A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
e
P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals: 1 - Gate 2,4 - Drain
3 - Source
TO-3P Outline
© 2014 IXYS CORPORATION, All Rights Reserved
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
45
50
01234567
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
7V
5V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
90
100
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
VGS
= 10V
8V
6V
5V
7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
5
10
15
20
25
30
35
40
45
50
0 2 4 6 8 1012141618
V
DS
- Volts
I
D
- Amperes
5V
6V
4V
VGS
= 10V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 25A Value v s .
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degr ees Cen tigrade
R
DS(on)
- Normalized
VGS
= 10V
I D = 50A
I D = 25A
Fig. 5. R
DS(on)
No rmalized to I
D
= 25A Value vs.
Drain Curren t
0.6
1.0
1.4
1.8
2.2
2.6
3.0
0 102030405060708090100
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cen tigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Vo lts
I
D
- Amperes
T
J
= 1 25ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
0 1020304050607080
I
D
- Amp eres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
0.30.40.50.60.70.80.91.01.11.2
V
SD
- Vo lts
I
S
- Ampere s
T
J
= 1 25ºC T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100
Q
G
- NanoCoulombs
V
GS
- Volt s
V
DS
= 300V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Ca pacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Fo r war d -B i as Safe Op er ati n g Area
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
© 2014 IXYS CORPORATION, All Rights Reserved
IXFT50N60P3 IXFQ50N60P3
IXFH50N60P3
IXYS REF: F_50N60P3(W8)03-10-11
Fi g. 13. Maximu m Tr an si ent Thermal I mpedan ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 13. Maximu m Tr an si en t Th er mal I mped ance
AAAAA
0.2
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