z BC107,8,9 5 BC167,8,9 g BC237,8,9 7 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9. BC237, 8, 9 are complementary to BC307, 8, 9. BC317, 8, 9 are complementary to BC320, 1, 2. D0-18 . T0-92B TO-92F TO-92A CASE : : of | CBE. ECB CEB EBC: BC107,8,9 BC167 8,9 BC237 58,9 BC317 ,8,9 KesoUTE MAXIMUM RATINGS ~ - BO YCES Vor VEzo I(pc) Prot , Tj Tstg EL a) | mo] () (ma) | (nw) * BC1OT 50 50 45 6 100 300 - BC108 30 30 20 5 100 300 -55 to 175C BC1LO9 30 30 20 5 100 300.- 167. | 50 0 45 6 100 300 oe ae1es 30 30 26 5 100 200 -55 to 1509C BCL9 | 30 3 20 5 100 300 BC237 | 50 50 45 6 | 10 | 300 | BC238 30 30 20 5 100 300 | -55 to 150C BC239 | 30 30 20 5 100 300 | ot } -BC317 50. 45 6 * 150 310 a a " . BCZLE AS 30 5 150 310 | -55 to 1500c . | Bgz19 20 20 6 150 a> - * Total Power Sissioution @ Tas 2590 : Zz MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. Kwun Tong P.O, Box 69477 Hong Kong. Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5 Feb-97 am. ELECTRICAL CHARACTERISTICS (Ta=25C unless otherwise noted) PARAMETER SYMBOL _ MIN TYP MAX| UNIT] TEST CONDITIONS Collector-Base Breakdown Voltage BVcBO | Vv Ic=10uA Ip=0 Collector-Emitter Breakdown Voltage LVckO * | Note 1 Ic=2mA Ip=0 Emitter-Base Breakdown Voltage BYEBO | v Ig=ipa Ic=0 Collector Cutoff Current IeRs BC1LO7, 108, 109 15 | nA VCE=Vcrs VBE=0 BC167, 168, 169 f only 4) pA | Vom=Vces Vpg=0 BC237, 238, 239 Ta=1250C Collector Cutoff Current Icpo 30 | nA Vop=20V Ig=0 Ta=1000C Collector-Emitter Saturation Voltage Vor(sat)* BC107, 108, 109 0.07 0.25) V Ic=lOmA Ip=0.5mA | BC167, 168, 169 only 0.22 0.6 | V Ic=100mA TR=5mA BC237, 238, 239 H BC317, 318, 3519 only VCR(sat)* 0.07 0.2 | V Ic=lOmA Ip=0.5mA 0.2 0.5/1 VV. IC=100mA Ip=5mA Base-Emitter Saturation Voltage VBE(sat)* BC1O7, 108, 109 0.7 0.83] V Ic=l0mA Ip=0.5mA BCl167, 168, 169 only 0.9 1.051 V Ic=100mA IB=5mA_ BC237, 238, 239 Base-Emitter Voltage All types VBE + 0.55 0.63 0.7 | V Ic=2mA VoER=5V BC317, 318, 319 only 0.68 0.77| V Ig=1OmA . VCE=5V Current Gain-Bandwidth Product fr BC107, 108, 109 _ BC167, 168, 169 only 150 250 MHz | Ic=l0mA VCE=5V BC237, 238, 239 _ Collector-Base Capacitance Cob VoBp=10V Ip=0 BC107, 198, 109 3.2 6.0 | pF f=1MHz BC167, 168, 169 2-7 4.5 | pF BC237, 236, 239 2.7 4.5 | pF BC317, 318, 319 2.7 4.0 | pF Noise Figure . NF Ig=0.2mA VCE=5V BC107, 108 2 10 | GB Rg=eK a2. f=1kHz BCLE7, 168 2 10 | dB Af=200Hz j { BC237, 238 2 10 | dB 1 BC317, 318 2 6 | dB * Pulse Test : Pulse Width=0.3mS, Duty Cycle=1% Note 1 : equal to the value of absolute maximum ratings. ~ - - Continued - - - PARAMETER SYMBOL | MIN TYP MAX | UNIT| TEST CONDITIONS Noise Figure NF Ig=0.2mA Vop=5V a. BCLO9 1.5 4 dB Re=2kKn 8 f=lkHz BC169 Af=200Hz only BC239 Tc=0.2mA VoR=5V 1.2 d BC319 4 B Ra=2Ko. f=408z-15kKHz D.C. CURRENT GAIN (Hrs) @ VeE=5V Ta=25C at Ic Ere GROUP A HFE GROUP B HFE GROUP C _ (Pulsed) MIN TYP | MAX MIN TYP MAX MIN TYP MAX O.OlmA 40 90 40 170 100 290 2mA 110 170 220 200 300 450 420 520 800 100mA 100 160 270 h-PARAMETERS @ Ic=2mA VCE=5V f=lkHz Ta=259C H c B h - PARAMETER SYMBOL FE GROUP A HFE GROUP B FE GROUP C | orm MIN TYP MAX | MIN TYP MAX | MIN TYP MAX Input Impedance hie 1.6 207 4.51) 362 4.5 8.5 6 8.7 15] Ka (voltage Feedback Ratio ire 1.5 2 3 x10~4 Small Signal Current Gain | hre 125 190 260 | 240 330 500 | 450 580 900 Output Admittance hoe 18 8630 30 60 60 110 pu D.C. CURRENT GAIN vs COLLECTOR CURRENT HFE 600 400 200 am 0.01 lq (mA) Vcg=5V 100 TYPICAL CHARACTERISTICS AT Ta=25C (Pulse Test) VBE AND VCE(sat) vs COLLECTOR CURRENT (Vv) 1.2 1.0 VBE @ Vce=5V 0.8 0.6 0.4 0.2 VCE(sat) @ Ic=20 Ip tc (mA) oe BC107 family TYPICAL CHARACTERISTICS (Ta=25C UNLESS OTHERWISE SPECIFIED) COMMON EMITTER CURRENT GAIN BANDWIDTH PRODUCT OUTPUT CHARACTERISTICS vs COLLECTOR CURRENT fr 4 5yA (MHz) 300 Vce=5V 4yA an at = ~ 3uA 200 TN 2A yw \ : 100: , IB=t pA 0 0 1 2 3 4 5 0.1 . 1 10 100 COLLECTOR CUTOFF CURRENT hPARAMETERS (NORMALIZED) vs AMBIENT TEMPERATURE vS COLLECTOR CURRENT - 200 10 100 lcBo (nA) he (N) 10 1.0 1 0.1 0.2 0 40 80 120 160 - 0.1 1 19 Ta (c) Ig (ma) COLLECTORBASE CAPACITANCE BROAD BAND NOISE FIGURE vs COLLECTORBASE VOLTAGE vs COLLECTOR CURRENT (pF) N + =30-15K Hz (dB) -+ NG _ 6 \ NN Rg=5000n. y 3 X Lot NY | / ; NO Pei RGR tka PMH Rg=2Kre ae 2 re Rg=5Ke , pn RG=10K2 0 rt) - 10 100 1000 Veen aa Ie (uA)