Numerical Index 2N3262-2N3371 =| > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS i= = = = = || REPLACE- | PAGE Po 7B] Ty | Vee | Vee |= tre @ Ic Voeisan @ le 2) _ le We 2 /5| ment | numper | USE 3 2 al |B} 23 =\o @ 25C | BS] C | Wwolts) | (volts) |S | (min) (max) 5} (volts) = 3 s\s 2N3262 S| N HSS | 8.75W| C | 200 100 80] 0 40 O.5A 0.6 1L.0A 150M | T 2N3263 S|] N PMS 75W | Cc | 200 150 90,0 20 55 15A 1.0 20A 20M | T 2N3264 S|N PMS 75w | c | 200 120 60] 0 20 80 5A 1.6 20A 20M |T 2N3265 S|N PMS 125W]} Cc | 200 150 90) 0 20 55 15A 1.0 20A 20M | T 2N3266 S| N PMS 125W |] C | 200 120 60/0 20 80 15A 1.6 20A 20M | T 2N3267 Gy] P RFA 75M | A | 100 15 8.0] 0 10} 500 3.0M IS |E 900M | T 2N3268 S| N AFA | 0.15W | A | 200 45 4510 12 80 LOM 1.0 5.0M 40 }E 2.5M]B 2N3269 thru Thyristors, see Table on Page 1-154 2N3276 pneree Field Effect Transistors, see Table on Page 1-166 2N3279 G| P 9-49 RFA O.1W} A] 100 30 20]0 10 70 3,0M 0.3 5.0M LO|E 400M | T 2N3280 G| P 9-49 RFA 0.1W{ A} 100 30 20] 0 10 70 3.0M 0.3 5.0M lO) E 400M | T 2N3281 Gy] P 9-49 RFA O.1W] A] LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M lO] E 300M | T 2N3282 G| P 9-49 RFA O.1W] A} LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M LO] E 300M | T 2N3283 G| P 9-51 RFC O.1W yA } 100 25 25)]8 10 3.0M 10 | E 250M | T 2N3284 G|P 9-51 RFC O.1W | A f 100 25 25]S8 10 3.0M 1O|E 250M | T 2N3285 Gy] P 9-51 RFC O.1W {A } 100 20 20}S5]5.0 3.0M 5.0]/E 250M | T 2N3286 G| P 9-51 RFC O,1lw] A} 100 20 20}S ]5.0 3.0M 5.0]E 250M | T 2N3287 SIN 9-54 REA 0.2W | At 200 40 2010 15] 100 2.0M 0,3 5.0M I5|/E 350M | T 2N3288 S| N 9454 RFA 0.2W] A] 200 40 20]0 15 | 100 2,0M} 0.3 5.0M I5|E 350M | T 2N3289 S| N 9-54 REA 0.2W | A |} 200 30 15) 0 10 | 150 2.0M 0.4 5,0M LO] E 300M | T 2N3290 Sj WN 9-54 RFA Q.2W | A | 200 30 15 |0 10 {150 2.0M] 0.4 50M 10/E 300M | T 2N3291 S|N 9-56 RFC 0.2W | A | 200 25 25 |S 10 2.0M 10 | E 250M | T 2N3292 S]N 9-56 RFC 0.2W | A | 200 25 2518 10 2.0M 10 | E 250M | T 2N3293 S|] N 9-56 RFC 0.2W | A | 200 20 20]S 10 2,0M 10/E 250M | T 2N3294 S|N 9-56 RFC 0.2W | A | 200 20 20/8 10 2,.0M 1lO/E 250M | T 2N3295 S|N 9-58 MPA 800M | A | 175 60 60] 5S 20 60 10M 0.5 0.154 200M | T 2N3296 SEN 9-61 MPA 700M | A} 175 60 60}S]5.0 50 40M 0.5 0.44 LOOM | T 2N3297 S| N 9-64 MPA 25W | Cc] 175 60 60 |S 42.5 35 0.44 0.5 1.0A LOOM | T 2N3298 S|N 9-67 HPA L.0W | C] 175 25 15 | 0 80 | 240 10M 200M | T 2N3299 S| N 8-219] HSS 0.8W | A | 200 60 30] 0 40 | 120] 0.154 | 0.22 0.15A 250M | T 2N3300 S|N 8-219} HSS 0.8W] A | 200 60 30 | O | 100 } 300 | 0.15A | 0.22 0.154 250M | T 2N3301L S| N 8-219] HSS | 0.36W | A | 200 60 30] 0 40 | 120 | 0.15A | 0.22 O.15A 250M | T 2N3302 S|[N 8-219} HSS | 0.36W | A | 200 60 30 | O | 100 | 300 |] 0.154 | 0.22 0,158 250M | T 2N3303 S| N 8-221] HSS 0.6W]} A | 200 25 12 | 0 30 | 120 0.34 10.33 O.3A 450M | T 2N3304 S| P 8-223} MSS 0.3W | A | 200 6.0 6.0]0 30] 120 LOM | 0.16 LOM 500M | T 2N3305 S| P AFA 0.6W | A | 200 50 40] 0 40 | 120 0,1M 0.2 10M 40/E 20M | T 2N3306 S| P AFA 0.6W | A | 200 50 40 | 0 | 100 | 300 0.1M 0.2 10M 70] E 20M | T 2N3307 S| P 9-69 RFA 0.2W | A | 200 40 35] 0 40 | 250 2.0M 0.4 3.0M 40/E 300M | T 2N3308 S| P 9-69 RFA 0.2W | A | 200 30 25] 0 25 | 250 2.0M 0.4 3.0M 25 ]/E 300M | T 2N3309 S|} N | 2N3553 9-74 MPA 3.5W] C4175 50 50] S |5.0} 100 30M 0.5 0.25A 300M | T 2N3309A4 | S| N | 2N3553 9-74 HPA 5.OW | c } 200 60 60/S ]8.0 80 50M] 0.5 0.254 300M | T 2N3310 S| N HPA 0.3W | A | 200 35 15] 0 10 20M 0.5 20M 300M | T 2N3311 G| P 7-108] LPA 170W | C |; 110 30 30/58 60 | 120 3.0A o.1 3.0A 30 )E L.OK]E 2N3312 G| P 7-108] LPA 170w | | 110 45 45 | Ss 60 | 120 3.0A O.L 3.0A 30]E 1.0K/E 2N3313 G| P 7-108] LPA 170W | Cc } 110 60 60 |S 60 | 120 3.0A O.1 3.0A 30/E L.OK | E 2N3314 Gj P 7~108| LPA 170W | c | 110 30 30] S | 100 | 200 3.0A a.1 3.0A 40/E 1.0K] E 2N3315 Gi] P 7-108) LPA 170W | c | 110 45 45 |S 1100] 200 3.0A O.1 3.0A 40 |E 1.0K] E 2N3316 Gi P 7-108; LPA L70W | C; 110 60 60; 5 ; LOQ; 200 3.0A Q.t 3.0A 40,5 LOK] E 2N3317 Ss] P CHP | 0.15W | A | 140 30 30] 0 6.4M | T 2N3318 s| P CHP | 0.15W | A | 140 15 15] 0 7,.6M/T 2N3319 Ss] P CHP | 0.15W] A | 140 10 6.0] 0 12M | T 2N3320 G| P HSS 60M | A | 100 15 10 | 0 50 20M | 0.19 40M 600M | T 2N3321 Gy] P HSS 60M | A | 100 12 7.0] 0 | 100 1oM | 0.12 10M 600M | T 2N3322 G| P HSs 60M | A} 100 12 7.0] 0 30 40M | 0.25 20M 600M | T 2N3323 G| P 9n71 RFC | 0.15W | A | 100 35 35 |S 30 | 200 3,0M 30]/E 200M | T 2N3324 G| P G71 RFC | 0.15W | A | 100 35 35/8 30 | 200 3.0M 30] E 200M | T 2N3325, G|P 9-71 | RFC] 0.15W| A | 100 35 35 |S 30 | 200 3.0M 30, E 200M | T 2N3326 S] Nj 2N2218A 8-114] HSA 0.8W] A] 175 60 4510 40] 120] 0.15A 0.4 0.154 250M | T 2N3327 S| N HPA 20W | C | 200 65 6510 10 O.5A 100M | T 2N3328 oNaa x6 Field Effect Transistors, see Table on Page 1-166 N333 2N3337 SS} N | 2N3287 9-54 RFA 0.3W |] A | 200 40 40] 0 30 | 300 4.0M 30/E 400M { T 2N3338 S| N | 2N3289 9-54 RFA 0.3W] A | 200 40 40] 0 30 | 300 4,0M 30] E 400M | T 2N3339 S| Nj 2N3288 9-54 RFA 0.3W} A | 200 40 40] 0 30 | 300 4.0M 30/ E 400M | T 2N3340 Ss; N MSS 0.4W 7] A | 175 30 20} 0 40 1o* 0.2 10* 70M | T 2N3341 S| P MSS 0.4W 7) A | 175 30 2010 40 Lo* | 0.25 10* 50M | T 2N3342 Ss} P MSS | 0,25W] A} 175 20 8.0} 0 30 5,0M 0.1 5.0M 2N3343 Ss}; P CHP | 0.25W] A | 175 25 8.0] 0 20 0.25M 2.0M| T 2N3344 S| P CHP | 0.25W] A | 175 30 30] 0 25 1.0M 2.0M| T 2N3345 S| P CHP | 0.25W] A} 175 50 50] 0 15 1.0M 2.0M| T 2N3346 S| P CHP | 0.25W] A] 175 50 50] 0 25 1.0M 2.0M/ T 2N3347 S| P DFA 300M | A | 175 60 45] 0 40 | 300 10* 0.5 10M 60] E 60M | T 2N3348 S| P DFA 300M | A | 175 60 4510 40 | 300 10* 0.5 10M 60} E 60M | T 2N3349 S| P DFA 300M | A | 175 60 45/0 40 | 300 10* 0.5 10M 60} E 60M| T 2N3350 S| P DFA 300M] A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N33521 Ss] P DFA 300M | A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N3352 si P DFA 300M] A | 175 60 45 | 0 | 100] 300 10* 0.5 10M 150] E 60M | T 2N3353 thru Thyristors, see Table on Page 1-154 2N3364 2N3365 thru Field Effect Transistors, see Table on Page 1-166 2N3370 2n3371 | G| P| | [eral isom]a|ioo{| 25| 10}/o| 20| 300] 12m 25{ | 320M 1-138GENERAL PURPOSE SWITCHING AND AMPLIFIER TRANSISTORS (SILICON) Switching and General Purpose Transistors Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcto Oto 10 mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.04 AOAC 3OA Min Volts NPN PNP NPN PNP NPN PNP NPN PNP NPN PNP 15 2N916 2N916 2N696 2N1991 2N2330 2N1983 2N697 | 2N2331 2N1984 2N718 2N1420 29 2N2195 30 2N2218 | 2N3133 2N2218 | 2N2800 2N2219 | 2N3134 2N2219 | 2N2801 2N2221 | 2N3135 2N2221 | 2N2837 2N2222 | 2N3136 2N2222 | 2N2838 2N3299 | 2N3133 2N3300 | 2N3134 2N3301 | 2N3135 39 2N3302 | 2N3136 49 2N758 2N3250 2N2218A| 2N3250 2N2194 | 2N2904 2N2192 | 2N3244 2N3506 2N795 2N3251 2N2219A! 2N3251 2N2218A} 2N2905 2N2193 | 2N3245 2N3507 2N760 MM4048 2N22214! 2N2219A) 2N2906 2N915 2N2222A 2N2221A] 2N2907 2N929 2N2224 2N2222A!| 2N3485 2N930 2N3946 2N3486 2N3946 2N3947 2N4890 59 2N3947 60 2N758A | 2N3798 2N910 2N3250A 2N656 2N2904A 2ZN759A | 2N3799 2N911 2N3251A 2N699 2N2905A 2N760A | 2N3250A 2N1990 2N2906A 2N929A | 2N3251A 2N2907A 2N9304 2N3485A MM2483 2N3486A 79 MM2484 80 2N739 2N3494 2N720A | 2N3494 2N720A 2N3019 Y 2N740 2N3496 2N1893 | 2N3496 2N3019 2N3020 99 2N2405 2N3020 100 2N4924 | 2N3495 2N3498 | 2N3495 2N3498 | 2N3634 \ 2N3497 2N3499 | 2N3497 2N3499 | 2N3635 2N4928 2N4924 | 2N9634 2N4924 2N3635 149 2N4928 150 2N3114 | 2N4929 2N3500 | 2N3635 2N3500 | 2N3636 2N4925 | 2N4930 2N3501 | 2N3637 2N3501 | 2N3637 2N4926 2N4925 | 2N4929 2N4925 249 2N4926 | 2N4930 250 2N3742 | 2N3743 2N3742 | 2N3743 uP 2N4927 | 2N4931 2N4927 | 2N4931 D?'NWi(*=ww~rirosdc &{ WiehwWWMWWwwYo qh~w~wy* ~7* We > >, ,wWW, BCE)?0DiWwCOCC WN NW Switching and General Purpose Transistors 2N3299 thru 2NGSO2 (SILICON) Vero S0n, V c= mA Pp = 360 to 800 mW ) NPN silicon annular transistors for high-speed switching circuits and DC to UHF amplifier applications. Collector connected to case CASE 22 TO-18 casegy (1O"8) (TO-5) 2N3301 2N3302 2N3299 2N3300 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Voro 30 Vdc (Applicable 0 to 10 mAdc) Collector-Base Voltage Vop 60 Vdc Emitter-Base Voltage Ves 5.0 Vdc Collector Current In 500 mAdc Operating Junction Temperature Range T J -65 to +200 C Storage Temperature Range T ste ~65 to +300 C 2N3299 | 2N3301 2N3300 | 2N3302 Total Device Dissipation @T, = 25C Py 0.8 0. 36 Watt Derate above 25C 4.56] 2.06 mw/C Total Device Dissipation @T,y = 25C Py 3.0 1.8 Watts Derate above 25C 17.2 | 10.3 mw/Cc FIGURE 1 SATURATED TURN-ON SWITCHING FIGURE 2 SATURATED TURN-OFF SWITCHING TIME TEST CIRCUIT TIME TEST CIRCUIT | 300 ns hr Veo = 25 Vde | 10 ps rr 15 Vde TL. 80 4+31V 0 OUTPUT TO OSCILLOSCOPE 0 Zin = 100k Q t, < 1.0ns 0.47 jaf Veo = 25 Vde OUTPUT TO OSCILLOSCOPE Zin 100K Q t, < 1.0 ns 500 1N3600 8-219 Switching and General Purpose Transistors 2N3299 thru 2N3302 (continued) ELECTRICAL CHARACTERISTICS 1, = 25C untess otherwise noted) [ Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage* BV on9* Vdc (Ie = 10 mAdc, lL = 0) 30 - Collector-Base Breakdown Voltage BV apo Vdc (Ig = 10 pAde, Le 0) 60 - Emitter-Base Breakdown Voltage BVERO Vdc (I, = 10 wAde, I, = 0) 5.0 - Collector Cutoff Current I pAdc = : CES _ (Vo = 50 Vde, Vig = 0) 0.01 Vor = x = o - = 50 Vdc, V,, = 0, T, = 150C) 10 Emitter Cutoff Current I nAdc = = EBO Vag = 3.0 Vde, ln = 0) - 10 Base Current I nAdc Vor = 50 Vdc, Vor = 0) - 10 ON CHARACTERISTICS DC Current Gain hop - Mg = 0.1 mAdc, Vor = 10 Vdc) 2N3299, 2N3301 20 - 2N3300, 2N3302 35 - Te = 1.0 mAdc, Vor = 10 Vdc) 2N3299, 2N3301 25 - 2N3300, 2N3302 50 ~ = 10 Vdc)* 2N3299, 2N3301 35 - 2N3300, 2N3302 715 - = 1.0 Vdc)* 2N3299, 2N3301 20 - 2N3300, 2N3302 50 - (I, = 150 mAdc, Vor = 10 Vdc)* 2N3299, 2N3301 40 120 2N3300, 2N3302 100 300 (1, = 500 mAdec, Vor = 10 Vde)* 2N3299, 2N3301 20 - 2N3300, 2N3302 50 - (Ig = 10 mAde, Von = 150 mAdc, Vo, Collector-Emitter Saturation Voltage Vorisat) Vde Ip = 150 mAdc, I = 15 mAdc} - 0.22 Ug = 300 mAdc, I = 30 mAdc) - 0.45 (lg = 500 mAdc, Ib = 50 mAdc) - 0.6 Base-Emitter Saturation Voltage Veg(sat) Vdc ora = 150 mAdc, i, = 15 mAdec) - 11 (lg = 300 mAdc, 1, = 30 mAdc) - 1.3 (I, = 500 mAdc, I, = 50 mAdc) - 1.5 Cc B Base-Emitter On Voltage VBE(on) le = 150 mAdc, Vor = 10 Vde) - 1.1 Vde DYNAMIC CHARACTERISTICS Current-GainBandwidth Product f, MHz (a = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 250 - Output Capacitance Cc pF Vop = 10 Vdc, In =0, f = 140 kHz) - 8.0 Input Capacitance Cc, pF (Vip = 2.0 Vde, 1, = 0, f = 140 kHz) - 20 Turn-On Time (Figure 1) t ns Voo = 25 Vdc, I, = 300 mAdc, lai = 30 mAdc) - 60 Turn-Off Time (Figure 2) t ns Voc = 25 Vde, Io = 300 mAdc, Toi = Igo = 30 mAdc) - 150 * Pulse Test: Pulse Width s 300 us; Duty Cycle < 2%. 8-220