BAT54SWT1G / BAT54CWT1G — Schottky Diodes
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54SWT1G / BAT54CWT1G Rev. 1.1
November 2015
BAT54SWT1G / BAT54CWT1G
Schottky Diodes
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and stressing the parts to these levels is n ot re co mme nded. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
BAT54SWT1G YB SC70 3L (SOT-323) Tape and Reel
BAT54CWT1G YC SC70 3L (SOT-323) Tape and Reel
Symbol Parameter Value Unit
VRRM Maximum Repetitive Reverse Voltage 30 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-Repetitive Peak Forward Surge Current
Pulse Width = 1.0 second 600 mA
TSTG Storage Temperature Range -65 to +150 °C
TJOperating Junction Temperature -65 to +125 °C
12
3
BAT54SWT1G = YB
BAT54CWT1G = YC
MARKING
Connection Diagram
3
12
3
12
BAT54CWT1GBAT54SWT1G
SOT-323
BAT54SWT1G / BAT54CWT1G — Schottky Diodes
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54SWT1G / BAT54CWT1G Rev. 1.1 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
1. FR-4 board (3.0 × 4.5 × 0.062” by 1.0 × 0.5” land pads)
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
PDPower Dissipation 232 mW
RθJA Thermal Resistance, Junction-to-Ambient(1) 430 °C/W
Symbol Parameter Conditions Min. Max. Unit
VRBreakdown Voltage IR = 10 μA30V
VFForward Voltage
IF = 0.1 mA 240
mV
IF = 1 mA 320
IF = 10 mA 400
IF = 30 mA 500
IF = 100 mA 800
IRReverse Leakage VR = 25 V 2 μA
CTTotal Capacitance VR = 1 V, f = 1.0 MHz 10 pF
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω5.0 ns
BAT54SWT1G / BAT54CWT1G — Schottky Diodes
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54SWT1G / BAT54CWT1G Rev. 1.1 3
Typical Performance Characteristics
Figure 1. Forward Voltage vs. Temperature Figure 2. Reverse Leakage Current
vs. Temperature
Figure 3. Capacitance vs. Reverse Bias Voltage
1E-6
1E-5
1E-4
1E-3
0.01
0.1
0.2 0.4 0.6 0.8
75 °C
25 °C
100 °C
125 °C
Forward Voltage Drop, VF[V]
Forward Curr ent, IF[A]
0 102030
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
125 °C
100 °C
75 °C
25 °C
Reverse Current, IR[A]
Reverse Voltage, VR[V]
0246810
0
3
5
8
10
13
15
18
20
Juntion Capacitance, CJ[pF]
Reverse Voltage, VR[V]
BAT54SWT1G / BAT54CWT1G — Schottky Diodes
© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54SWT1G / BAT54CWT1G Rev. 1.1 4
Physical Dimensions
Figure 4. 3-LEAD, SC70, EIAJ SC-70, 1.25MM WIDE
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I77
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