RECTRON SEMICONDUCTOR MMBT3906LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * As complementary type,the NPN transistor MMBT3904LTI is Recommended * Epitaxial planar die construction SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.043(1.100) 0.035(0.900) 0.020(0.500) 0.012(0.300) 0.020(0.50) 0.004(0.100) 0.000(0.000) 0.100(2.550) 0.089(2.250) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) 0.118(3.000) 0.110(2.800) Ratings at 25 o C ambient temperature unless otherwise specified. Dimensions in inches and (millimeters) RATINGS SYMBOL Zener Current ( see Table "Characteristics" ) VALUE UNITS - - - O Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ -55 to +150 o C TSTG -55 to +150 o C Storage Temperature Range ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1.Alumina=0.4*0.3*0.024in.99.5% alumina SYMBOL MIN. TYP. MAX. R JA - - 417 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (2) (I C = -1.0 mAdc, I B = 0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (I C = -100Adc, I E = 0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (I E = -100Adc, I C = 0) V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc) 60 - (I C = -1.0mAdc, V CE = -1.0Vdc) 80 - Base Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc) Collector Cutoff Current (V CE = -30Vdc, V EB = -3.0Vdc) ON CHARACTERISTICS(2) (I C = -10mAdc, V CE = -1.0Vdc) hFE 100 300 (I C = -50mAdc, V CE = -1.0Vdc) 60 - (I C = -100mAdc, V CE = -1.0Vdc) 30 - - -0.25 - -0.4 -0.65 -0.85 - -0.95 fT 250 - MHz Output Capacitance (V CB = -5.0Vdc, I E = 0, f= 1.0MHz) Cobo - 4.5 pF Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz) Cibo - 10 pF Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hie 2.0 12 k Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hre 0.1 10 X 10-4 Small-Signal Current Gain (V CE = -10Vdc, I C = -10mAdc, f= 1.0kHz) hfe 100 400 - Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz) hoe 3.0 60 mhos Noise Figure (V CE = -5.0Vdc, I C = -100Adc, RS= 1.0k, f= 1.0kHz) NF - 4.0 dB td - 35 tr - 35 ts - 225 tf - 75 Collector-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) VCE(sat) (I C = -50mAdc, I B = -5.0mAdc) Base-Emitter Saturation Voltage (I C = -10mAdc, I B = -1.0mAdc) Vdc VBE(sat) (I C = -50mAdc, I B = -5.0mAdc) - Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C = -10mAdc, V CE = -20Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Delay Time (V CC = -3.0Vdc, V BE = 0.5Vdc, I C = -10mAdc, I B1 = -1.0mAdc) Rise Time Storage Time (V CC = -3.0Vdc, I C = -10mAdc, I B1 = I B2 = -1.0mAdc) Fall Time ns ns <300s,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width- RECTRON 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) RATING AND CHARACTERISTICS CURVES ( MMBT3906LT1 ) Cibo 3.0 2.0 VCC= 40 V IC/IB= 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 100 70 50 20 30 40 2.0 3.0 5.0 7.0 10 1.0 2.0 3.0 REVERSE BIAS(VOLTS) 20 30 50 70 100 200 IC,COLLECTOR CURRENT(mA) Figure 1 Capacitance Figure 2 Charge Data 500 500 IC/IB= 10 100 70 50 tr @ VCC=3.0V 15 V 30 20 VCC= 40 V IB1 = IB2 300 200 t f,FALL TIME (ns) 300 200 TIME (ns) 5.0 7.0 10 IC/IB= 20 100 70 50 30 20 IC/IB= 10 40 V 10 7 5 10 2.0 V 7 5 td @ VOB=0V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 Figure 3 Turn-On Time 4.0 f = 1.0 kHz SOURCE RESIST ANCE=200 IC= 0.5 mA SOURCE RESISTANCE=2.0k IC= 50A 2.0 1.0 0 0.1 SOURCE RESIST ANCE=2.0k IC= 100A 0.2 0.4 1.0 2.0 50 70 100 IC= 1.0 mA 10 IC= 0.5 mA 8 6 4 IC= 50A IC= 100A 2 4.0 10 f, FREQUENCY (kHz) Figure 5 200 12 SOURCE RESIST ANCE=200 IC= 1.0 mA 3.0 20 30 Figure 4 Fall Time NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 5.0 7.0 10 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 Rg,SOURCE RESIST ANCE(K OHMS) Figure 6 RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT3906LT1 ) 100 hoe, OUTPUT ADMITTANCE(mhos) hfe, DCCURRENT GAIN 300 200 100 70 50 30 0.2 0.3 0.5 0.7 1.0 2.0 3.0 20 10 7 hre, VOLTAGE FEEDBACK RATIO(x10-4) 2.0 1.0 0.7 0.5 0.2 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 2.0 3.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 9 Input lmpedance Figure 10 Voltage Feedback Ratio TJ= 25OC VBE(sat)@IC/IB=10 0.8 VBE@VCE=1.0V 0.6 0.4 VCE(sat)@IC/IB=10 0.2 2.0 0.5 0.7 1.0 Figure 8 Output Admittance 3.0 1.0 0.3 Figure 7 Current Gain 10 0 0.2 IC,COLLECTOR CURRENT(mA) 7.0 5.0 0.1 0.1 IC,COLLECTOR CURRENT(mA) V,TEMPERATURE COEFFICIENTS(mV/5C) hie, INPUT IMPEDANCE(Kk OHMS) 30 5.0 7.0 10 1.0 V,VOLTAGE(VOLTS) 50 5 0.1 20 0.3 0.2 70 5.0 10 20 50 100 200 1.0 0.5 +25OC TO +125OC VCFOR VCE(sat) 0 -55OC TO +25OC 0.5 +25OC TO +125OC 1.0 -55OC TO +25OC VBFOR VBE(sat) 1.5 2.0 0 20 40 60 80 100 120 140 160 180 200 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 11 "ON" Voltages Figure 12 Temperature Coefficients RECTRON