DOC: 7083 iss 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N6660X
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• Switching Regulators
• Converters
• Motor Drivers
VDS Drain – Source Voltage
VGS Gate – Source Voltage
IDContinuous Drain Current @ TCASE = 25°C
IDContinuous Drain Current @ TCASE = 100°C
IDM Pulsed Drain Current *
PDPower Dissipation @ TCASE = 25°C
PDPower Dissipation @ TCASE = 100°C
TjOperating Junction Temperature Range
Tstg Storage Temperature Range
TLLead Temperature (1/16” from case for 10 sec.)
60V
±40V
±1.1A
±0.8A
±3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated)
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
CASE – Drain
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
DOC: 7083 iss 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N6660X
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (TCASE = 25°C unless otherwise stated)
BVDSS Drain – Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IGSS Gate – Body Leakage Current
IDSS Zero Gate Voltage Drain Current
ID(on)* On–State Drain Current
RDS(on)* Drain – Source On Resistance
VDS(on)* Drain – Source On Voltage
gFS* Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
tON Turn–On Time
tOFF Turn–Off Time
ISContinuous Source Current
(Body Diode)
ISM Source Current1(Body Diode)
VSD Diode Forward Voltage 1
VGS = 0V ID= 10μA
VDS = VGS ID= 1mA
VGS = ±15V
VDS = 0V TCASE = 125°C
VDS = Max. Ratings VGS = 0V
VDS =0.8VMax.Ratings
VGS = 0V TCASE = 125°C
VDS = ≥2VDS(ON) VGS = 10V
VGS = 5V ID= 0.3A
VGS = 10V
ID= 1A TCASE = 125°C
VGS = 5V ID= 0.3A
VGS = 10V ID= 1A
VDS = 25V ID= 0.5A
VGS = 0V VDS = 25V
f = 1MHz
VDD = 25V ID= 1A
RL= 23ΩRG= 25Ω
Modified MOSPOWER
Symbol Showing
The Integral
PN Juncion Rectifier
IS = -1.1A VGS = 0V
TCASE = 125°C
60 100
0.8 1.5 2.2
1 ±100
5 ±500
110
50 500
1.5 1.7
4.7 5
2.7 3
3.9 4.2
1.4 1.5
2.7 3
170 195
35 50
33 40
210
810
810
-1.1
-3
-0.9
V
nA
μA
A
Ω
V
mS
pF
ns
A
V
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
1 Pulse Test: Pulse width ≤300 μs , Duty Cycle ≤2%
Parameter Min. Typ. Max. Unit
RθJA Thermal Resistance, Junction to Ambient (Free Air Operation) 170 C/W
RθJC Thermal Resistance, Junction to Case 20 C/W
,
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