DF005M-E345 - VISHAY - Datasheet.Support

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M

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Revision: 16-Aug-13 1Document Number: 88571

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Miniature Glass Passivated Single-Phase Bridge Rectifiers

FEATURES

• UL recognition, file number E54214

• Ideal for printed circuit boards

• Applicable for automative insertion

• High surge current capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for SMPS, lighting ballaster, adapter, battery charger, home

appliances, office equipment, and telecommunication

applications.

MECHANICAL DATA

Case: DFM

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked on body

PRIMARY CHARACTERISTICS

Package DFM

IF(AV) 1 A

VRRM 50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

IFSM 50 A

IR5 μA

VF at IF = 1.0 A 1.1 V

TJ max. 150 °C

Diode variations Quad

Case Style DFM

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT

Device marking code DF005 DF01 DF02 DF04 DF06 DF08 DF10

Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V

Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V

Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V

Maximum average forward output rectified current

at TA = 40 °C IF(AV) 1.0 A

Peak forward surge current single sine-wave

superimposed on rated load IFSM 50 A

Rating for fusing (t < 8.3 ms) I2t10A

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT

Maximum instantaneous

forward voltage drop per diode 1.0 A VF 1.1 V

Maximum reverse current at

rated DC blocking voltage per

diode

TA = 25 °C

5.0

μA

TA = 125 °C 500

Typical junction capacitance

per diode 4.0 V, 1 MHz CJ25 pF

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M

www.vishay.com Vishay General Semiconductor

Revision: 16-Aug-13 2Document Number: 88571

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads



RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

Fig. 3 - Typical Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT

Typical thermal resistance (1) RJA 40 °C/W

RJL 15

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

DF06M-E3/45 0.416 45 50 Tube

20 40 60 80 100 120 140 150

0.5

1.0

60 Hz

Resistive or

Inductive Load

P. C . B . M o unted on

0.51 x 0.51" (13 x 13 mm)

Copper Pads with 0.06"

(1.5 mm) Lead Length

Ambient Temperature (°C)

Average Forward Output Current (A)

110 100

1.0 Cycle

TJ = 150 °C

Single Sine-Wave

Number of Cycles at 60 Hz

Average Forward Output Current (A)

0.4 0.6 0.8 1.0 1.2 1.4

0.01

0.1

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

020 40 60 80 100

0.01

0.1

100

= 125 °C

= 25 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Current (µA)

DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M

www.vishay.com Vishay General Semiconductor

Revision: 16-Aug-13 3Document Number: 88571

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance



PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

110 100

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

Reverse Voltage (V)

Junction Capacitance (pF)

0.01 0.1 110 100

0.1

100

t - Heating Time (s)

Transient Thermal Impedance (°C/W)

Case Style DFM

0.255 (6.5)

0.245 (6.2)

0.315 (8.00)

0.285 (7.24)

0.013 (0.33)

0.0086 (0.22)

0.350 (8.9)

0.300 (7.6)

0.075 (1.90)

0.055 (1.39)

0.205 (5.2)

0.195 (5.0)

0.080 (2.03)

0.050 (1.27)

0.185 (4.69)

0.150 (3.81)

0.335 (8.51)

0.320 (8.12)

0.130 (3.30)

0.120 (3.05)

0.045 (1.14)

0.035 (0.89)

0.023 (0.58)

0.018 (0.46)

Legal Disclaimer Notice

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Revision: 08-Feb-17 1Document Number: 91000

Disclaimer



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