DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES * UL recognition, file number E54214 * Ideal for printed circuit boards * Applicable for automative insertion * High surge current capability * Solder dip 275 C max. 10 s, per JESD 22-B106 ~ * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 ~ ~ TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for SMPS, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. ~ Case Style DFM PRIMARY CHARACTERISTICS Package DFM IF(AV) 1A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 50 A IR 5 A VF at IF = 1.0 A 1.1 V TJ max. 150 C Diode variations Quad MECHANICAL DATA Case: DFM Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked on body MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M Device marking code DF005 DF01 DF02 DF04 DF06 DF08 DF10 UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V Maximum DC blocking voltage VDC Maximum average forward output rectified current at TA = 40 C IF(AV) 1.0 A Peak forward surge current single sine-wave superimposed on rated load IFSM 50 A I2t 10 A2s TJ, TSTG - 55 to + 150 C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum reverse current at rated DC blocking voltage per diode Typical junction capacitance per diode Revision: 16-Aug-13 TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT 1.0 A TA = 25 C TA = 125 C 4.0 V, 1 MHz VF 1.1 V 5.0 IR CJ 500 25 A pF Document Number: 88571 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance (1) DF005M DF01M DF02M DF04M RJA 40 RJL 15 DF06M DF08M DF10M UNIT C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N DF06M-E3/45 UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.416 45 50 Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 60 Hz Resistive or Inductive Load Instantaneous Forward Current (A) Average Forward Output Current (A) 1.0 0.5 P.C.B. Mounted on 0.51 x 0.51" (13 x 13 mm) Copper Pads with 0.06" (1.5 mm) Lead Length 40 60 80 100 120 140 150 0.6 0.8 1.0 1.2 1.4 Ambient Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Typical Forward Characteristics Per Diode 100 Instantaneous Reverse Current (A) 60 Average Forward Output Current (A) TJ = 25 C Pulse Width = 300 s 1 % Duty Cycle 0.1 0.01 0.4 0 20 1 TJ = 150 C Single Sine-Wave 50 40 30 20 10 1.0 Cycle 10 TJ = 125 C 1 0.1 TJ = 25 C 0.01 0 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Revision: 16-Aug-13 Document Number: 88571 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M www.vishay.com Vishay General Semiconductor 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Transient Thermal Impedance (C/W) Junction Capacitance (pF) 100 10 10 1 0.1 0.01 1 1 10 100 0.1 1 10 100 Reverse Voltage (V) t - Heating Time (s) Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style DFM 0.255 (6.5) 0.315 (8.00) 0.245 (6.2) 0.285 (7.24) 0.335 (8.51) 0.320 (8.12) 0.080 (2.03) 0.050 (1.27) 0.130 (3.30) 0.120 (3.05) 0.045 (1.14) 0.035 (0.89) 0.185 (4.69) 0.150 (3.81) 0.023 (0.58) 0.018 (0.46) 0.205 (5.2) 0.195 (5.0) Revision: 16-Aug-13 0.075 (1.90) 0.055 (1.39) 0.013 (0.33) 0.0086 (0.22) 0.350 (8.9) 0.300 (7.6) Document Number: 88571 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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