Parameter Max. Units
VDS Drain- Source Voltage -14 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±11
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±8.8 A
IDM Pulsed Drain Current ±88
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy110 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
10/6/04
IRF7220PbF
HEXFET® Power MOSFET
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
VDSS = -14V
RDS(on) = 0.012Ω
Description
Absolute Maximum Ratings
W
www.irf.com 1
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLead-Free
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
SO-8
PD - 95172
IRF7220PbF
2www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 160 240 ns TJ = 25°C, IF = -2.5A
Qrr Reverse RecoveryCharge ––– 147 220 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
-88
-2.5
A
When mounted on 1 inch square copper board, t<10 sec
S
D
G
Starting TJ = 25°C, L = 1.8mH
RG = 25Ω, IAS = 11A. (See Figure 10)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5mA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.006 ––– V/°C Reference to 25°C, ID = -1mA
––– .0082 0.012 VGS = -4.5V, ID = -11A
––– .0125 0.020 VGS = -2.5V, ID = -8.8A
VGS(th) Gate Threshold Voltage -0.60 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 8.4 ––– ––– S VDS = -10V, ID = -11A
––– ––– -5.0 VDS = -11.2V, VGS = 0V
––– ––– -100 VDS = -11.2V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 84 125 ID = -11A
Qgs Gate-to-Source Charge ––– 13 20 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 37 55 VGS = -5.0V
td(on) Turn-On Delay Time ––– 19 ––– VDD = -10V
trRise Time ––– 420 ––– ID = -11A
td(off) Turn-Off Delay Time ––– 140 ––– RG = 6.2Ω
tfFall Time ––– 1040 ––– RD = 0.91Ω
Ciss Input Capacitance ––– 8075 ––– VGS = 0V
Coss Output Capacitance ––– 4400 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 4150 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
IRF7220PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-11A
0.1
1
10
100
1000
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
-1.2V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.2V
0.1
1
10
100
1000
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
-1.2V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.2V
1.0 1.5 2.0 2.5
-VGS, Gate-to-Source Voltage (V)
10
100
-ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = -10V
250µs PULSE WIDTH
IRF7220PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
020 40 60 80 100 120
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-11A
V =-10V
DS
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
4000
5000
6000
7000
8000
9000
10000
110
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
GS
iss gs gd ds
rss gd
oss ds gd
V = 0V, f = 1kHz
C = C + C , C SHORTED
C = C
C = C + C
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
IRF7220PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
2
4
6
8
10
12
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-4.9A
-8.8A
-11A
IRF7220PbF
6www.irf.com
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B ASI C
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT PR I NT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L INE CONF OR MS T O J E DE C OU T L I NE MS - 01 2AA.
NOT ES :
1. DIME NSIONING & T OLE RANCING PE R AS ME Y14.5M-1994.
2. CONT ROL LING DIMENS ION: MILL IMET ER
3. DIME NS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
5 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .
6 DIMENS ION DOE S NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR S OLDERING TO
A SUBS T RATE.
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: THIS IS AN IRF7101 (MOSFET )
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S IT E CODE
IRF7220PbF
www.irf.com 7
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
